Motorola BF959 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 

NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

20 Vdc

Collector–Base Voltage V

CBO

30 Vdc

Emitter–Base Voltage V

EBO

3.0 Vdc

Collector Current — Continuous I

C

100 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watt

mW/°C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction to Case

R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V

(BR)CEO

20 — — Vdc

Collector–Base Breakdown Voltage (IC = 10 mAdc, IE = 0)

V

(BR)CBO

30 — — Vdc

Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V

(BR)EBO

3.0 — — Vdc

Collector Cutoff Current (VCB = 20 Vdc, IE = 0) I

CBO

— — 100 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)

h

FE

35
40

—
—

—
—

—

Collector–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) V

CE(sat)

— — 1.0 Vdc

Base–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) V

BE(sat)

— — 1.0 Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)

f

T

700
600

—
—

—
—

MHz

Common Emitter Feedback Capacitance

(VCB = 10 Vdc, Pf = 0, f = 10 MHz)

C

re

— 0.65 — pF

Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 Ω, f = 200 MHz) N

f

— 3.0 — dB

Order this document

by BF959/D



SEMICONDUCTOR TECHNICAL DATA



CASE 29–04, STYLE 21

TO–92 (TO–226AA)

1

2

3

 Motorola, Inc. 1996

COLLECTOR

1

3

BASE

2

EMITTER

BF959

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 1. hFE at 10 V

IC, COLLECTOR CURRENT (mA)

30

50

200

500

1000

10

1

Figure 2. V

CE(sat)

at IC/IB = 10

IC, COLLECTOR CURRENT (mA)

10 20 30 502 3 4 5

h

FE

, DC CURRENT GAIN

100

40

20

100

30

50

200

500

10

1 10 20 30 502 3 4 5

100

40

20

Figure 3. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

0.8

1.2

1.6

1.8

2.0

0.4
1

Figure 4. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10 20 30 502 3 4 5

1.4

1

0.6

100 1 10 20 30 502 3 4 5 100

f , CURRENT–GAIN — BANDWIDTH PRODUCT (GHz)

T

C, CAPACITANCE (pF)

0.8

1.2

1.6

1.8

0.4

1.4

1

0.6

0.2

Figure 5. Input Impedance at 30 MHz

IC, COLLECTOR CURRENT (mA)

0.3

0.5

2

5

10

0.1
1

Figure 6. Output Impedance at 30 MHz

IC, COLLECTOR CURRENT (mA)

10 20 30 502 3 4 5

1

0.4

0.2

100 1 10 20 30 502 3 4 5

Y11e (ms)

40

100

300

500

20

200

50
30

10

Y22e ( s)

µ

3

4

mV

5 V

10 V

2 V

C

ob

C

ib

C

re

VCE = 10 V

g11e

b11e

VCE = 10 V

b22e

g22e

40