Motorola BF844 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
400 Vdc
Collector–Base Voltage V
CBO
450 Vdc
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
300 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
400 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
V
(BR)CES
450 — Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
450 — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
6.0 — Vdc
Collector Cutoff Current
(VCB = 400 Vdc, IE = 0)
I
CBO
— 0.1 µAdc
Collector Cutoff Current
(VCE = 400 Vdc, VBE = 0)
I
CES
— 500 nAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
I
EBO
— 0.1 µAdc
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Order this document
by BF844/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
BF844
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(1)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
h
FE
40
50
45
20
—
200
—
—
—
Collector–Emitter Saturation Voltage
(1)
(IC = 1.0 mAdc, IB = 0.1 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
V
CE(sat)
—
—
—
0.4
0.5
0.75
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
V
BE(sat)
— 0.75 Vdc
DYNAMIC CHARACTERISTICS
High Frequency Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
|hfe| 1.0 —
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 6.0 pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
C
ib
— 110 pF
Turn–On Time
(VCC = 150 Vdc, V
BE(off)
= 4.0 V, IC = 30 mAdc, IB1 = 3.0 mAdc)
t
on
— 0.6 µs
Turn–Off Time
(VCC = 150 Vdc, IC = 30 mAdc, IB1 = IB2 = 3.0 mAdc)
t
off
— 10 µs
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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