Motorola BF721T1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
–300 Vdc
Collector-Base Voltage V
CBO
–300 Vdc
Collector-Emitter Voltage V
CER
–300 Vdc
Emitter-Base Voltage V
EBO
–5.0 Vdc
Collector Current I
C
–100 mAdc
Total Power Dissipation up to
TA = 25°C
(1)
P
D
1.5 Watts
Storage Temperature Range T
stg
–65 to +150 °C
Junction Temperature T
J
150 °C
DEVICE MARKING
DF
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance from Junction to
Ambient
(1)
R
θJA
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V
(BR)CEO
–300 — Vdc
Collector-Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
V
(BR)CBO
–300 — Vdc
Collector-Emitter Breakdown Voltage
(IC = –100 µAdc, RBE = 2.7 kΩ)
V
(BR)CER
–300 — Vdc
Emitter-Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
V
(BR)EBO
–5.0 — Vdc
Collector-Base Cutoff Current
(VCB = –200 Vdc, IE = 0)
I
CBO
— –10 nAdc
Collector–Emitter Cutoff Current
(VCE = –250 Vdc, RBE = 2.7 kΩ)
(VCE = –200 Vdc, RBE = 2.7 kΩ, TJ = 150°C)
I
CER
—
—
–50
–10
nAdc
µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BF721T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
PNP SILICON
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
SOT–223 (TO-261AA)
1
2
3
4
COLLECTOR 2,4
BASE
1
EMITTER 3
REV 3
BF721T1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(VCE = –25 mAdc, VCE = –20 Vdc)
h
FE
50 — —
Collector-Emitter Saturation Voltage
(IC = –30 mAdc, IB = –5.0 mAdc)
V
CE(sat)
— –0.8 Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(VCE = –10 Vdc, IC = –10 mAdc, f = 35 MHz)
f
T
60 — MHz
Feedback Capacitance
(VCE = –30 Vdc, IC = 0, f = 1.0 MHz)
C
re
— 1.6 pF
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