Motorola BF493S Datasheet
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
Order this document
by BF493S/D
COLLECTOR
3
2
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
T emperature Range
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T
Characteristic
R
q
JA
R
q
JC
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –250 Vdc)
Emitter Cutoff Current
(VEB = –6.0 Vdc, IC = 0)
Collector Cutoff Current
(VCB = –250 Vdc, IE = 0, TA = 25°C)
(VCB = –250 Vdc, IE = 0, TA = 100°C)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
(1)
1
EMITTER
–350 Vdc
–350 Vdc
–6.0 Vdc
–500 mAdc
625
5.0
1.5
12
–55 to +150 °C
200 °C/W
83.3 °C/W
Watts
mW/°C
Watts
mW/°C
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
I
EBO
I
CBO
–350 — Vdc
–350 — Vdc
–6.0 — Vdc
— –10 nAdc
— 0.1
—
—
–0.005
–1.0
m
m
Adc
Adc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
BF493S
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
Collector–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
Base–Emitter On Voltage
(IC = –20 mA, IB = –2.0 mA)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
Common–Emitter Feedback Capacitance
(VCB = –100 Vdc, IE = 0, f = 1.0 MHz)
(TA = 25°C unless otherwise noted) (Continued)
h
FE
V
CE(sat)
V
BE(sat)
f
C
25
40
— –2.0 Vdc
— –2.0 Vdc
T
re
50 — MHz
— 1.6 pF
—
—
—
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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