SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
2
BASE
COLLECTOR
3
1
EMITTER
Order this document
1
2
3
by BF393/D
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
T emperature Range
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to
Ambient
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
R
q
JA
R
q
JC
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB =0)
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
(1)
300 Vdc
300 Vdc
6.0 Vdc
500 mAdc
625
5.0
1.5
12
–55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
Watts
mW/°C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Vdc
300 —
Vdc
300 —
Vdc
6.0 —
µAdc
— 0.1
µAdc
— 0.1
(Replaces BF392/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BF393
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
Collector–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Common Emitter Feedback Capacitance
(VCB = 60 Vdc, IE = 0, f = 1.0 MHz)
h
FE
V
CE(sat)
V
BE(sat)
f
C
25
40
— 2.0
— 2.0
T
re
50 —
— 2.0
—
—
—
Vdc
Vdc
MHz
pF
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data