Motorola BF240 Datasheet

1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
Collector–Base Voltage V
CBO
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
25 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
357 °C/W
Thermal Resistance, Junction to Case
R
q
JC
125 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
40 Vdc
Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V
(BR)CBO
40 Vdc
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V
(BR)EBO
4.0 Vdc
Collector Cutoff Current (VCB = 20 Vdc, IE = 0) I
CBO
100 nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) h
FE
65 220
Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc) V
BE(on)
0.65 0.7 0.74 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
600 MHz
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
re
0.28 0.34 pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Order this document
by BF240/D

SEMICONDUCTOR TECHNICAL DATA

CASE 29–04, STYLE 21
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER
REV 1
BF240
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
VCE = 10 V TA = 25
°
C
f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
C, CAPACITANCE (pF)
BF240
1000
10
20
100
200
300
500
700
1000.2 0.3 0.5 0.7 1 3 5 10 20
IC, COLLECTOR CURRENT (mA)
Figure 1. Current–Gain — Bandwidth Product
10
0.2
0.1 VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitances
0.3
0.4
0.5
0.7
1
2
0.2 0.5 1 3 5 10 20
Cre @ IE = 0
C
ob
C
ib
200
0.1 IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20
100
10
20
30
50
70
h
FE
, DC CURRENT GAIN
100
1
2
5
10
20
50
2 3 4 5 6 7 8
IC, COLLECTOR CURRENT (mA)
Figure 4. b11e
VCE = 10 V TA = 25
°
C
BF240
mmhos
VCE = 10 V
100 MHz
45 MHz
10.7 MHz
b
11e
470 kHz < 0.2 mmhos
mmhos
–100
–1
–2
–5
–10
–20
–50
2 3 4 5 6 7 8
IC, COLLECTOR CURRENT (mA)
Figure 5. b21e
VCE = 10 V
100 MHz
45 MHz
10.7 MHz
b
21e
, at 470 kHz < 0.5 mmhos
mhos
2000
1 2 3 4 5 6 7
IC, COLLECTOR CURRENT (mA)
Figure 6. b22e (boe)
µ
20
50
100
200
500
1000
VCE = 10 V
100 MHz
45 MHz
10.7 MHz
470 kHz
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