1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CBO
40 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
25 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
357 °C/W
Thermal Resistance, Junction to Case
R
q
JC
125 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
40 — — Vdc
Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V
(BR)CBO
40 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current (VCB = 20 Vdc, IE = 0) I
CBO
— — 100 nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) h
FE
65 — 220 —
Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc) V
BE(on)
0.65 0.7 0.74 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
— 600 — MHz
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
re
— 0.28 0.34 pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.