Motorola BF224 Datasheet

1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
Collector–Base Voltage V
CBO
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
50 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
357 °C/W
Thermal Resistance, Junction to Case
R
q
JC
125 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
30
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
45
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V
(BR)EBO
4.0
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
I
CBO
100
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
I
EBO
100
nAdc
Order this document
by BF224/D

SEMICONDUCTOR TECHNICAL DATA

CASE 29–04, STYLE 21
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER
BF224
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 7.0 mAdc, VCE = 10 Vdc)
h
FE
30
Base–Emitter On Voltage
(IC = 7.0 mAdc, VCE = 10 Vdc)
V
BE(on)
0.77 0.9
mVdc
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
V
CE(sat)
0.15
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 1.5 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 7.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
300
600 850
— —
MHz
Common Emitter Feedback Capacitance
(VCE = 10 Vdc, IE = 0, f = 1.0 MHz)
C
re
0.28
pF
Noise Figure
(IC = 1.0 mAdc, VCE = 10 Vdc, RS = 50 , f = 100 MHz) (IC = 1.0 mAdc, VCE = 10 Vdc, RS = 50 , f = 200 MHz)
N
f
— —
2.5
3.5
— —
dB
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