Motorola BDC02D Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BDC02D Unit
Collector–Emitter Voltage V
CEO
–100 Vdc
Collector–Base Voltage V
CBO
–100 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–0.5 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction to Case
R
q
JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Voltage
(IC = –10 mA, IB = 0)
V
(BR)CEO
–100 — Vdc
Collector Cutoff Current
(VCB = –100 V, IE = 0)
I
CBO
— –0.1
m
Adc
Emitter Cutoff Current
(IC = 0, VEB = –5.0 V)
I
EBO
— –100 nAdc
Order this document
by BDC02D/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
1
2
3
Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER
BDC02D
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mA, VCE = –1.0 V)
(IC = –500 mA, VCE = –2.0 V)
h
FE
40
25
400
—
—
Collector–Emitter Saturation Voltage
(1)
(IC = –1000 mA, IB = –100 mA)
V
CE(sat)
— –0.7 Vdc
Collector–Emitter On Voltage
(1)
(IC = –1000 mA, VCE = –1.0 V)
V
BE(on)
— –1.2 Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = –200 mA, VCE = –5.0 V, f = 20 MHz)
f
T
50 — MHz
Output Capacitance
(VCB = –10 V, IE = 0, f = 1.0 MHz)
C
ob
— 30 pF
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
–0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0
–10 –20 –30 –50 –70 –100 –200
200
100
80
60
40
h
FE
, DC CURRENT GAIN
TJ = 125°C
25°C
–55°C
VCE = –1.0 V
–300 –500
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–1.0
–0.8
–0.6
–0.4
–0.2
0
–0.1 –10–1.0
TJ = 25°C
IC = –10 mA
–0.05 –0.2 –0.5 –2.0 –5.0 –20 –50
–100 mA –250 mA –500 mA
–50
mA
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V, VOLTAGE (VOLTS)
–1.0
–0.8
–0.6
–0.4
–0.2
0
TJ = 25°C
V
BE(on)
@ VCE = –1.0 V
V
CE(sat)
@ IC/IB = 10
–0.5
V
BE(sat)
@ IC/IB = 10
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
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