Motorola BDB02D, BDB02C Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BDB02C BDB02D Unit
Collector–Emitter Voltage V
CEO
–80 –100 Vdc
Collector–Base Voltage V
CES
–80 –100 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–0.5 Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
P
D
2.5
20
Watt
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction to Case
R
q
JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Voltage BDB02C
(IC = –10 mA, IB = 0) BDB02D
V
(BR)CEO
–80
–100
—
—
Vdc
Collector Cutoff Current
(VCB = –80 V, IE = 0) BDB02C
(VCB = –100 V, IE = 0) BDB02D
I
CBO
—
—
–0.1
–0.1
m
Adc
Emitter Cutoff Current (IC = 0, VEB = –5.0 V) I
EBO
— –100 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mA, VCE = –1.0 V)
(IC = –500 mA, VCE = –2.0 V)
h
FE
40
25
400
—
—
Collector–Emitter Saturation Voltage
(1)
(IC = –1000 mA, IB = –100 mA) V
CE(sat)
— –0.7 Vdc
Collector–Emitter On Voltage
(1)
(IC = –1000 mA, VCE = –1.0 V) V
BE(on)
— –1.2 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = –200 mA, VCE = –5.0 V, f = 20 MHz) f
T
50 — MHz
Output Capacitance (VCB = –10 V, IE = 0, f = 1.0 MHz) C
ob
— 30 pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%.
Order this document
by BDB02C/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
BDB02C,D
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
–0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0
–10 –20 –30 –50 –70 –100 –200
200
100
80
60
40
h
FE
, DC CURRENT GAIN
TJ = 125°C
25°C
–55°C
VCE = –1.0 V
–300 –500
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–1.0
–0.8
–0.6
–0.4
–0.2
0
–0.1 –10–1.0
TJ = 25°C
IC = –10 mA
–0.05 –0.2 –0.5 –2.0 –5.0 –20 –50
–100 mA –250 mA –500 mA
–50
mA
IC, COLLECTOR CURRENT (mA)
Figure 3. On Voltages
V, VOLTAGE (VOLTS)
–1.0
–0.8
–0.6
–0.4
–0.2
0
TJ = 25°C
V
BE(on)
@ VCE = –1.0 V
V
CE(sat)
@ IC/IB = 10
–0.5
V
BE(sat)
@ IC/IB = 10
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
–0.8
–2.8
–1.0 –100–10
θ
VB
for V
BE
–0.5 –2.0 –5.0 –20 –50 –200
–1.2
–1.6
–2.0
–2.4
VB
, TEMPERATURE COEFFICIENT (mV/ C)
°θ
–500
C, CAPACITANCE (pF)
Figure 5. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
–100–50–20–10–5.0–2.0–1.0–0.5–0.2–0.1
100
70
50
30
20
5.0
TJ = 25
°
C
C
obo
C
ibo
10
7.0
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