Mitsubishi TM55DZ-M, TM55DZ-H, TM55CZ-M, TM55CZ-H Datasheet

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Mitsubishi TM55DZ-M, TM55DZ-H, TM55CZ-M, TM55CZ-H Datasheet

MITSUBISHI THYRISTOR MODULES

TM55DZ/CZ-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

TM55DZ/CZ-M,-H

IT (AV)

Average on-state current ............

55A

VRRM

Repetitive peak reverse voltage

 

........ 400/800V

VDRM Repetitive peak off-state voltage

........ 400/800V

DOUBLE ARMS

Insulated Type

UL Recognized

Yellow Card No. E80276 (N) File No. E80271

APPLICATION

DC motor control, NC equipment, AC motor control, Contactless switches,

E lectric furnace temperature control, Light dimmers

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

 

 

93.5

 

 

 

 

 

80

 

2–φ6.5

 

 

 

 

 

 

 

K2

G2

 

 

 

 

 

12.5

26

 

 

 

K1

G1

 

17.5

20

20

3–M5

 

 

 

 

 

Tab#110,

 

 

 

 

t=0.5

 

 

 

 

 

9

 

 

LABEL

 

6.5

21 30

(DZ)

 

 

 

 

 

 

K2 G2

A1K2

CR1

A2

 

K1

 

 

CR2

 

K1 G1

(CZ)

 

 

 

 

 

 

K2 G2

A1

CR1 K1K2

A2

 

 

CR2

K1 G1

Feb.1999

MITSUBISHI THYRISTOR MODULES

TM55DZ/CZ-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Voltage class

 

Unit

M

 

H

 

 

 

 

VRRM

Repetitive peak reverse voltage

400

 

800

V

 

 

 

 

 

 

VRSM

Non-repetitive peak reverse voltage

480

 

960

V

 

 

 

 

 

 

VR (DC)

DC reverse voltage

320

 

640

V

 

 

 

 

 

 

VDRM

Repetitive peak off-state voltage

400

 

800

V

 

 

 

 

 

 

VDSM

Non-repetitive peak off-state voltage

480

 

960

V

 

 

 

 

 

 

VD (DC)

DC off-state voltage

320

 

640

V

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Conditions

Ratings

Unit

 

 

 

 

 

 

IT (RMS)

RMS on-state current

 

 

86

A

 

 

 

 

 

 

IT (AV)

Average on-state current

Single-phase, half-wave 180° conduction, TC=86°C

55

A

 

 

 

 

 

 

ITSM

Surge (non-repetitive) on-state current

One half cycle at 60Hz, peak value

1100

A

 

 

 

 

 

 

I2t

I2t for fusing

Value for one cycle of surge current

5.0 × 103

A2s

di/dt

Critical rate of rise of on-state current

VD=1/2VDRM, IG=1.0A, Tj=125°C

100

A/μs

 

 

 

 

 

 

PGM

Peak gate power dissipation

 

 

5.0

W

 

 

 

 

 

 

PG (AV)

Average gate power dissipation

 

 

0.5

W

 

 

 

 

 

 

VFGM

Peak gate forward voltage

 

 

10

V

 

 

 

 

 

 

VRGM

Peak gate reverse voltage

 

 

5.0

V

 

 

 

 

 

 

IFGM

Peak gate forward current

 

 

2.0

A

 

 

 

 

 

 

Tj

Junction temperature

 

 

–40~+125

°C

 

 

 

 

 

 

Tstg

Storage temperature

 

 

–40~+125

°C

 

 

 

 

 

Viso

Isolation voltage

Charged part to case

2500

V

 

 

 

 

 

 

 

 

Main terminal screw M5

1.47~1.96

N·m

 

 

 

 

Mounting torque

15~20

kg·cm

 

 

 

 

 

 

Mounting screw M6

1.96~2.94

N·m

 

 

 

 

 

 

 

 

20~30

kg·cm

 

 

 

 

 

 

 

 

 

Weight

Typical value

160

g

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

 

Limits

 

Unit

 

 

 

Min.

Typ.

Max.

 

 

 

 

 

 

 

 

 

 

 

IRRM

Repetitive peak reverse current

Tj=125°C, VRRM applied

10

mA

IDRM

Repetitive peak off-state current

Tj=125°C, VDRM applied

10

mA

VTM

On-state voltage

Tj=125°C, ITM=165A, instantaneous meas.

1.35

V

dv/dt

Critical rate of rise of off-state voltage

Tj=125°C, VD=2/3VDRM

500

V/μs

VGT

Gate trigger voltage

Tj=25°C, VD=6V, RL=2Ω

3.0

V

VGD

Gate non-trigger voltage

Tj=125°C, VD=1/2VDRM

0.25

V

IGT

Gate trigger current

Tj=25°C, VD=6V, RL=2Ω

15

100

mA

Rth (j-c)

Thermal resistance

Junction to case (per 1/2 module)

0.5

°C/W

Rth (c-f)

Contact thermal resistance

Case to fin, conductive grease applied (per 1/2 module)

0.2

°C/W

Insulation resistance

Measured with a 500V megohmmeter between main terminal

10

MΩ

and case

 

 

 

 

 

 

 

 

 

 

 

 

 

Feb.1999

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