LabGruppen 10000q-fp100f-10, 10000q-fp100f-10-1, bs250 User Manual

TP0610L/T, VP0610L/T, BS250

Vishay Siliconix

P-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

Part Number	V(BR)DSS Min (V)	rDS(on) Max (W)	VGS(th) (V)	ID (A)
TP0610L	−60	10 @ VGS = −10 V	−1 to −2.4	−0.18
TP0610T	−60	10 @ VGS = −10 V	−1 to −2.4	−0.12
VP0610L	−60	10 @ VGS = −10 V	−1 to −3.5	−0.18
VP0610T	−60	10 @ VGS = −10 V	−1 to −3.5	−0.12
BS250	−45	14 @ VGS = −10 V	−1 to −3.5	−0.18

FEATURES		BENEFITS
D High-Side Switching		D Ease in Driving Switches
D Low On-Resistance: 8 W		D Low Offset (Error) Voltage
D Low Threshold: −1.9 V		D Low-Voltage Operation
D Fast Switching Speed:	16 ns	D High-Speed Switching
D Low Input Capacitance:	15 pF	D Easily Driven Without Buffer

APPLICATIONS

DDrivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

DBattery Operated Systems

DPower Supply, Converter Circuits

DMotor Control

	TO-226AA	Device Marking		TO-92-18RM
	(TO-92)	Front View	(TO-18 Lead Form)				TO-236
		TP0610L
S	1		D	1	Device Marking		(SOT-23)
		“S” TP			Front View
		0610L			BS250
G	2	xxll	G	2		G	1
					“S” BS		3	D
					250
						S	2
D	3	VP0610L	S	3	xxll
		“S” VP
					“S” = Siliconix Logo
		0610L
					xxll = Date Code		Top View
	Top View	xxll
				Top View
	TP0610L			BS250			TP0610T
	VP0610L	“S” = Siliconix Logo					VP0610T
		xxll = Date Code

Marking Code:

TP0610T: TOwll

VP0610T: VOwll

w = Week Code

lL = Lot Traceability

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter		Symbol	TP0610L	TP0610T	VP0610L	VP0610T	BS250	Unit
Drain-Source Voltage		VDS	−60	−60	−60	−60	−45	V
Gate-Source Voltage		VGS	"30	"30	"30	"30	"25
Continuous Drain Current	TA= 25_C	ID	−0.18	−0.12	−0.18	−0.12	−0.18
(TJ = 150_C)	TA= 100_C		−0.11	−0.07	−0.11	−0.07		A
Pulsed Drain Currenta		I	−0.8	−0.4	−0.8	−0.4
		DM
Power Dissipation	TA= 25_C	PD	0.8	0.36	0.8	0.36	0.83	W
	TA= 100_C		0.32	0.14	0.32	0.14
Thermal Resistance, Junction-to-Ambient		RthJA	156	350	156	350	150	_C/W
Operating Junction and Storage Temperature Range		TJ, Tstg			−55 to 150			_C
Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
Document Number: 70209							www.vishay.com
S-41260—Rev. H, 05-Jul-04								1

TP0610L/T, VP0610L/T, BS250

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

							Limits
					TP0610L/T		VP0610L/T		BS250
				Typa
Parameter	Symbol	Test Conditions			Min	Max	Min	Max	Min	Max	Unit
Static
Drain-Source	V(BR)DSS	VGS = 0 V, ID = −10 mA		−70	−60		−60
Breakdown Voltage		VGS = 0 V, ID = −100 mA							−45		V
Gate-Threshold	VGS(th)	VDS = VGS, ID = −1 mA		−1.9	−1	−2.4	−1	−3.5	−1	−3.5
Voltage
		VDS = 0 V, VGS = "20 V				"10		"10
Gate-Body Leakage	IGSS	VDS = 0 V, VGS = "20 V, TJ = 125_C				"50					nA
		VDS = 0 V, VGS = "15 V								"20
		VDS = −48 V, VGS = 0 V				−1		−1
Zero Gate Voltage
	IDSS	VDS = −48 V, VGS = 0 V, TJ = 125_C				−200		−200			mA
Drain Current
		VDS = −25 V, VGS = 0 V								−0.5
		VDS = −10 V, VGS = −4.5 V		−180	−50
On-State Drain
	ID(on)		L Suffix	−750			−600				mA
Currentb		VDS = −10 V, VGS = −10 V
			T Suffix				−220
		VGS = −4.5 V, ID = −25 mA		11		25
Drain-Source	rDS(on)	VGS = −10 V, ID = −0.5 A	L Suffix	8		10		10			W
On-Resistanceb		_	L Suffix	15		20		20
		VGS = −10 V, ID = −0.5 A, TJ = 125 C
		VGS = −10 V, ID = −0.2 A	T Suffix	6.5		10		10		14
Forward	gfs	VDS = −10 V, ID = −0.5 A	L Suffix	20	80						mS
Transconductanceb		VDS = −10 V, ID = −0.1 A	T Suffix	90	60		70
Diode Forward	VSD	IS = −0.5 A, VGS = 0 V		−1.1							V
Voltage
Dynamic
Input Capacitance	Ciss			15		60		60
Output Capacitance	Coss	VDS = −25 V, VGS = 0 V		10		25		25			pF
		f = 1 MHz
Reverse Transfer	Crss			3		5		5
Capacitance

Switchingc

Turn-On Time	tON	VDD = −25 V, RL = 133 W	8
Turn-Off Time	tOFF	ID ^ −0.18 A, VGEN = −10 V, Rg = 25 W	8

Notes

a.For DESIGN AID ONLY, not subject to production testing.

b.Pulse test: PW v300 ms duty cycle v2%.

c.Switching time is essentially independent of operating temperature.

10

ns

10

VPDS06

www.vishay.com	Document Number: 70209
2	S-41260—Rev. H, 05-Jul-04