Datasheet HMC331 Datasheet (hittite)

查询HMC331供应商

4

MICROWAVE CORPORATION

Typical Applications

The HMC331 is suitable for:

• Wireless Local Loop

• LMDS, VSAT, and Pt to Pt Radios

• T est Equipment

Functional Diagram

v02.1201

HMC331

GaAs MMIC PASSIVE FREQUENCY

DOUBLER, 12 - 18 GHz INPUT

Features

Conversion Loss: 14 dB
Fo, 3Fo, 4Fo Isolation: 50 dB
Passive: No Bias Required

General Description

The HMC331 is a passive miniature frequency dou­bler MMIC. Suppression of undesired fundamental
and higher order harmonics is 50 dB typical with
respect to input signal level. The doubler utilizes
the same GaAs Schottky diode/balun technology
found in Hittite MMIC mixers. It features small size,
requires no DC bias, and adds no measurable addi­tive phase noise onto the multiplied signal.

Electrical Specifi cations, T

Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units

FREQ. MULTIPLIERS - CHIP

4 - 22

Frequency Range, Input 13 - 18 12 - 18 12 - 18 GHz

Frequency Range, Output 26 - 36 24 - 36 24 - 36 GHz

Conversion Loss 15 20 14 20 14 19 dB

FO Isolation
(with respect to input level)

3FO Isolation
(with respect to input level)

4FO Isolation
(with respect to input level)

= +25° C, As a Function of Drive Level

A

Input = +11 dBm Input = +13 dBm Input = +15 dBm

45 50 45 50 45 50 dB

50 60 45 60 47 60 dB

50 60 50 60 50 60 dB

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v02.1201

HMC331

GaAs MMIC FREQUENCY

DOUBLER, 12 - 18 GHz INPUT

Conversion Loss vs.

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

Temperature @ +15 dBm Drive Level

0

+ 25 C

-5

-10

-15

CONVERSION GAIN (dB)

-20

-25
12 13 14 15 16 17 18

INPUT FREQUENCY (GHz)

+ 85 C

- 55 C

Conversion Loss
@ 25 Deg C Vs. Drive Level

0

-5

-10

-15

-20

CONVERSION GAIN (dB)

-25

-30
12 13 14 15 16 17 18

FREQUENCY (GHz)

+ 15 dBm
+ 13 dBm
+ 11 dBm

Isolation @ +15 dBm Drive Level* Input Return Loss vs. Drive Level

0

-20

-40

-60

ISOLATION (dB)

-80

Fo
3Fo
4Fo

0

-5

-10

-15

-20

INPUT RETURN LOSS (dB)

-25

+ 15 dBm
+ 13 dBm
+ 11 dBm

4

-100
10 15 20 25 30 35 40 45 50

FREQUENCY (GHz)

*With respect to input level

Output Return Loss
For Three Input Frequencies

0

-6

-12

-18

-24

OUTPUT RETURN LOSS (dB0

-30
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

-30
12 13 14 15 16 17 18

13 GHz In
15 GHz In
18 GHz In

OUTPUT FREQUENCY (GHz)

Order Online at www.hittite.com

FREQUENCY (GHz)

FREQ. MULTIPLIERS - CHIP

4 - 23

MICROWAVE CORPORATION

v02.1201

HMC331

GaAs MMIC FREQUENCY

4

Absolute Maximum Ratings

Input Drive +27 dBm

Storage Temperature -65 to +150 °C

Operating Temperature -55 to +85 °C

Outline Drawing

DOUBLER, 12 - 18 GHz INPUT

FREQ. MULTIPLIERS - CHIP

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.

4 - 24

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

3 mil Ribbon Bond

Ribbon Bond

v02.1201

HMC331

GaAs MMIC FREQUENCY

DOUBLER, 12 - 18 GHz INPUT

MMIC Assembly Techniques for HMC331

3 mil Ribbon Bond

Ribbon Bond

4

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han­dling, Mounting, Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bring­ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thic k molybden um heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).

Microstrip substrate should be brought as close to the die as possible in order to minimize ribbon bond length. Typical
die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075mm ( 3 mil) width and minimal length <0.31mm (
<12 mils) is recommended to minimize inductance on RF ports.,

FREQ. MULTIPLIERS - CHIP

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

4 - 25

MICROWAVE CORPORATION

v02.1201

HMC331

GaAs MMIC FREQUENCY

4

DOUBLER, 12 - 18 GHz INPUT

Handling Precautions

Follow these precautions to avoid permanent damage.

Cleanliness: Handle the chips in a clean environment. DO NO T attempt to clean the chip using liquid clean­ing systems.

Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and

bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent

tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet,
tweezers, or fi ngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and fl at.

Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool tempera­ture of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C.

DO NOT e xpose the chip to a temper ature greater than 320 °C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.

Epoxy Die Attach:

Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around
the perimeter of the chip once it is placed into position.

Cure epoxy per the manufacturer’s schedule.

Wire Bonding

FREQ. MULTIPLIERS - CHIP

RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically
bonded with a force of 40 - 60 grams. DC bonds of 0.001” (0.025mm) diameter, thermosonically bonded,
are recommended. Ball bonds should be made with a force of 40 - 50 grams and wedge bonds at 18 - 22
grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultra­sonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less
than 12 mils (0.31 mm).

4 - 26

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com