hittite HMC327MS8G User Manual
查询HMC327MS8G供应商
MICROWAVE CORPORATION
Typical Applications
8
This amplifi er is ideal for use as a power
amplifi er for 3.3 - 3.6 GHz applications:
• Wireless Local Loop
Functional Diagram
AMPLIFIERS - SMT
v02.1202
HMC327MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Features
Gain: 21 dB
Saturated Power: +30 dBm
45% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
General Description
The HMC327MS8G is a high effi ciency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifi er which operates between
3.0 and 4.0 GHz. The amplifi er is packaged in a
low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external components, the amplifi er provides 21 dB of gain,
+30 dBm of saturated power at 45% PAE from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when
the amplifi er is not in use.
8 - 104
Electrical Specifi cations, T
Parameter Min. Typ. Max. Units
Frequency Range 3.0 - 4.0 GHz
Gain 17 21 24 dB
Gain Variation Over Temperature 0.025 0.035 dB / °C
Input Return Loss 15 dB
Output Return Loss 8dB
Output Power for 1dB Compression (P1dB) 24 27 dBm
Saturated Output Power (Psat) 30 dBm
Output Third Order Intercept (IP3) 36 40 dBm
Noise Figure 5.0 dB
Supply Current (Icq) Vpd = 0V/5V 0.002 / 250 mA
Control Current (Ipd) Vpd = 5V 7 mA
Switching Speed tON, tOFF 40 ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
= +25° C, Vs = 5V, Vctl = 5V
A
Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.1202
HMC327MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Broadband Gain & Return Loss Gain vs. Temperature
25
20
15
10
5
0
-5
RESPONSE (dB)
-10
-15
-20
-25
2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
S21
S11
S22
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
0
-5
-10
+25 C
+85 C
-40 C
24
22
20
18
16
14
12
10
GAIN (dB)
8
6
4
2
0
2.5 3 3.5 4 4.5
FREQUENCY (GHz)
0
-5
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
8
AMPLIFIERS - SMT
-15
-20
RETURN LOSS (dB)
-25
-30
2.5 3 3.5 4 4.5
FREQUENCY (GHz)
-10
RETURN LOSS (dB)
-15
2.5 3 3.5 4 4.5
FREQUENCY (GHz)
P1dB vs. Temperature Psat vs. Temperature
34
32
30
28
26
24
22
P1dB (dBm)
20
18
16
14
2.5 3 3.5 4 4.5
FREQUENCY (GHz)
+25 C
+85 C
-40 C
34
32
30
28
26
24
22
Psat (dBm)
20
18
16
14
2.5 3 3.5 4 4.5
FREQUENCY (GHz)
+25 C
+85 C
-40 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 105
MICROWAVE CORPORATION
v02.1202
HMC327MS8G
GaAs InGaP HBT MMIC
Power Compression @ 3.5 GHz Output IP3 vs. Temperature
8
48
42
36
30
24
18
12
Pout (dBm), GAIN (dB), PAE (%)
6
0
-5 -3 -1 1 3 5 7 9 11 13 15
Pout (dBm)
Gain (dB)
PAE (%)
INPUT POWER (dBm)
Noise Figure vs. Temperature Gain & Power vs. Supply Voltage
AMPLIFIERS - SMT
10
9
8
7
6
5
4
3
NOISE FIGURE (dB)
2
1
0
3 3.5 4 4.5
FREQUENCY (GHz)
+25 C
+85 C
-40 C
POWER AMPLIFIER, 3.0 - 4.0 GHz
44
42
40
38
36
34
32
30
28
26
OIP3 (dBm)
24
22
20
18
16
14
2.5 3 3.5 4 4.5
FREQUENCY (GHz)
28
27
26
25
24
23
22
GAIN dB)
21
20
19
18
4.75 5 5.25
Gain
Vcc SUPPLY VOLTAGE (Vdc)
+25 C
+85 C
-40 C
P1dB
Psat
32
31
30
P1dB, Psat (dBm)
29
28
27
26
25
24
23
22
8 - 106
Reverse Isolation vs. Temperature Power Down Isolation
0
-10
-20
-30
-40
ISOLATION (dB)
-50
-60
2.5 3 3.5 4 4.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
+25 C
+85 C
-40 C
0
-5
-10
-15
-20
-25
ISOLATION (dB)
-30
-35
-40
2.5 3 3.5 4 4.5
FREQUENCY (GHz)
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