Datasheet HMC327MS8G Datasheet (hittite)

查询HMC327MS8G供应商

MICROWAVE CORPORATION

Typical Applications

8

This amplifi er is ideal for use as a power
amplifi er for 3.3 - 3.6 GHz applications:

• Wireless Local Loop

Functional Diagram

AMPLIFIERS - SMT

v02.1202

HMC327MS8G

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 3.0 - 4.0 GHz

Features

Gain: 21 dB

Saturated Power: +30 dBm

45% PAE

Supply Voltage: +5.0 V

Power Down Capability

Low External Part Count

General Description

The HMC327MS8G is a high effi ciency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifi er which operates between

3.0 and 4.0 GHz. The amplifi er is packaged in a
low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com­ponents, the amplifi er provides 21 dB of gain,
+30 dBm of saturated power at 45% PAE from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when
the amplifi er is not in use.

8 - 104

Electrical Specifi cations, T

Parameter Min. Typ. Max. Units

Frequency Range 3.0 - 4.0 GHz

Gain 17 21 24 dB

Gain Variation Over Temperature 0.025 0.035 dB / °C

Input Return Loss 15 dB

Output Return Loss 8dB

Output Power for 1dB Compression (P1dB) 24 27 dBm

Saturated Output Power (Psat) 30 dBm

Output Third Order Intercept (IP3) 36 40 dBm

Noise Figure 5.0 dB

Supply Current (Icq) Vpd = 0V/5V 0.002 / 250 mA

Control Current (Ipd) Vpd = 5V 7 mA

Switching Speed tON, tOFF 40 ns

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

= +25° C, Vs = 5V, Vctl = 5V

A

Order Online at www.hittite.com

MICROWAVE CORPORATION

v02.1202

HMC327MS8G

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 3.0 - 4.0 GHz

Broadband Gain & Return Loss Gain vs. Temperature

25

20

15

10

5

0

-5

RESPONSE (dB)

-10

-15

-20

-25
2 2.5 3 3.5 4 4.5 5

FREQUENCY (GHz)

S21
S11
S22

Input Return Loss vs. Temperature Output Return Loss vs. Temperature

0

-5

-10

+25 C

+85 C

-40 C

24

22

20

18

16

14

12

10

GAIN (dB)

8

6

4

2

0

2.5 3 3.5 4 4.5

FREQUENCY (GHz)

0

-5

+25 C

+85 C

-40 C

+25 C

+85 C

-40 C

8

AMPLIFIERS - SMT

-15

-20

RETURN LOSS (dB)

-25

-30

2.5 3 3.5 4 4.5

FREQUENCY (GHz)

-10

RETURN LOSS (dB)

-15

2.5 3 3.5 4 4.5

FREQUENCY (GHz)

P1dB vs. Temperature Psat vs. Temperature

34

32

30

28

26

24

22

P1dB (dBm)

20

18

16

14

2.5 3 3.5 4 4.5

FREQUENCY (GHz)

+25 C

+85 C

-40 C

34

32

30

28

26

24

22

Psat (dBm)

20

18

16

14

2.5 3 3.5 4 4.5

FREQUENCY (GHz)

+25 C

+85 C

-40 C

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 105

MICROWAVE CORPORATION

v02.1202

HMC327MS8G

GaAs InGaP HBT MMIC

Power Compression @ 3.5 GHz Output IP3 vs. Temperature

8

48

42

36

30

24

18

12

Pout (dBm), GAIN (dB), PAE (%)

6

0

-5 -3 -1 1 3 5 7 9 11 13 15

Pout (dBm)

Gain (dB)

PAE (%)

INPUT POWER (dBm)

Noise Figure vs. Temperature Gain & Power vs. Supply Voltage

AMPLIFIERS - SMT

10

9

8

7

6

5

4

3

NOISE FIGURE (dB)

2

1

0

3 3.5 4 4.5

FREQUENCY (GHz)

+25 C

+85 C

-40 C

POWER AMPLIFIER, 3.0 - 4.0 GHz

44
42
40
38
36
34
32
30
28
26

OIP3 (dBm)

24
22
20
18
16
14

2.5 3 3.5 4 4.5

FREQUENCY (GHz)

28

27

26

25

24

23

22

GAIN dB)

21

20

19

18

4.75 5 5.25

Gain

Vcc SUPPLY VOLTAGE (Vdc)

+25 C

+85 C

-40 C

P1dB

Psat

32

31

30

P1dB, Psat (dBm)

29

28

27

26

25

24

23

22

8 - 106

Reverse Isolation vs. Temperature Power Down Isolation

0

-10

-20

-30

-40

ISOLATION (dB)

-50

-60

2.5 3 3.5 4 4.5

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

+25 C

+85 C

-40 C

0

-5

-10

-15

-20

-25

ISOLATION (dB)

-30

-35

-40

2.5 3 3.5 4 4.5

FREQUENCY (GHz)

MICROWAVE CORPORATION

v02.1202

HMC327MS8G

GaAs InGaP HBT MMIC

Gain, Power & Quiescent Supply
Current vs. Vpd @ 3.5 GHz

30

25

20

15

10

GAIN (dB), P1dB (dBm), Psat (dBm)

5

2.5 3 3.5 4 4.5 5

Vpd (Vdc)

Outline Drawing

P1dB

Psat

Gain

Icq

POWER AMPLIFIER, 3.0 - 4.0 GHz

Absolute Maximum Ratings

250

Collector Bias Voltage (Vcc) +5.5 Vdc

200

150

100

50

0

Icq (mA)

Control Voltage (Vpd) +5.5 Vdc

RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc) +20 dBm

Junction Temperature 150 °C

Continuous Pdiss (T = 85 °C)
(derate 29 mW/°C above 85 °C)

Thermal Resistance
(junction to ground paddle)

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +85 °C

1.88 W

34 °C/W

8

AMPLIFIERS - SMT

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 107

MICROWAVE CORPORATION

v02.1202

HMC327MS8G

GaAs InGaP HBT MMIC

Pin Descriptions

8

Pin Number Function Description Interface Schematic

1 Vpd

2, 4, 7 GND

AMPLIFIERS - SMT

3 RF IN This pin is AC coupled and matched to 50 Ohms from 3.0 to 4.0 GHz.

5, 6 RF OUT

POWER AMPLIFIER, 3.0 - 4.0 GHz

Power Control Pin. For maximum power, this pin hsould be connected to

5.0V. A higher voltage is not recommended. For lower idle current, this
voltage can be reduced.

Ground: Backside of package has exposed metal ground slug that must

be connected to ground thru a short path. Vias under the device are

required.

RF output and bias for the output stage. The power supply for the output

device needs to be supplied to these pins.

8 Vcc

Power supply voltage for the fi rst amplifi er stage. An external bypass

capacitor of 330 pF is required. This capacitor should be placed as close

to the device as possible.

8 - 108

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v02.1202

HMC327MS8G

GaAs InGaP HBT MMIC

Evaluation PCB

POWER AMPLIFIER, 3.0 - 4.0 GHz

8

AMPLIFIERS - SMT

List of Material

Item Description

J1 - J2 PC Mount SMA RF Connector

J3 2 mm DC Header

C1 - C3 330 pF Capacitor, 0603 Pkg.

C4 1.2 pF Capacitor, 0603 Pkg.

C5 2.0 pF Capacitor, 0402 Pkg.

C6 2.2 µF Capacitor, Tantalum

L1 3.0 nH Inductor, 0805 Pkg.

R1 130 Ohm Resistor, 0603 Pkg.

U1 HMC327MS8G Amplifi er

PCB* 104829 Eval Board

* Circuit Board Material: Rogers 4350

The circuit board used in the fi nal application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads and exposed
paddle should be connected directly to the ground plane
similar to that shown. A suffi cient number of VIA holes
should be used to connect the top and bottom ground
planes. The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board shown is
available from Hittite upon request.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 109

MICROWAVE CORPORATION

v02.1202

HMC327MS8G

GaAs InGaP HBT MMIC

Application Circuit

8

AMPLIFIERS - SMT

POWER AMPLIFIER, 3.0 - 4.0 GHz

8 - 110

Note 1: C3 should be located < 0.020” from Pin 8 (Vcc)
Note 2: C2 should be located < 0.020” from L1.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

TL1 TL2 TL3

Impedance 50 Ohm 50 Ohm 50 Ohm

Length 0.038” 0.231” 0.1”

MICROWAVE CORPORATION

v02.1202

HMC327MS8G

GaAs InGaP HBT MMIC

Notes:

POWER AMPLIFIER, 3.0 - 4.0 GHz

8

AMPLIFIERS - SMT

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 111