Datasheet HMC311ST89 Datasheet (hittite)

查询HMC311ST89供应商

MICROWAVE CORPORATION

Typical Applications

8

The HMC311ST89 is an ideal RF/IF gain block
or LO buffer amplifi er for:

• Cellular / PCS / 3G

• Fixed Wireless & WLAN

• CATV & Cable Modem

• Microwave Radio

Functional Diagram

AMPLIFIERS - SMT

v00.0204

HMC311ST89

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 6.0 GHz

Features

P1dB Output Power: +15.5 dBm

Output IP3: +31.5 dBm

Gain: 16 dB

50 Ohm I/O’s

Industry Standard SOT89 Package

General Description

The HMC311ST89 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
DC to 6 GHz amplifi er. Packaged in an industry
standard SOT89, the amplifi er can be used as
either a cascadable 50 Ohm gain stage or to drive
the LO of HMC mixers with up to +16.5 dBm output
power. The HMC311ST89 offers 16 dB of gain
and an output IP3 of +31.5 dBm while requiring
only 54 mA from a +5V supply. The Darlington
feedback pair used results in reduced sensitivity
to normal process variations and yields excellent
gain stability over temperature while requiring a
minimal number of external bias components.

Electrical Specifi cations, Vs= 5.0 V, Rbias= 22 Ohm, T

Parameter Min. Typ. Max. Units

Gain

Gain Variation Over Temperature DC - 2.0 GHz

Return Loss Input / Output

Reverse Isolation DC - 6.0 GHz 20 dB

Output Power for 1 dB Compression (P1dB) DC - 2.0 GHz

Output Third Order Intercept (IP3)

Noise Figure

Supply Current (Icq) 54 mA

Note: Data taken with broadband bias tee on device output.

DC - 1.0 GHz

1.0 - 4.0 GHz

4.0 - 6.0 GHz

2.0 - 4.0 GHz

4.0 - 6.0 GHz

DC - 2.0 GHz

2.0 - 5.0 GHz

5.0 - 6.0 GHz

2.0 - 4.0 GHz

4.0 - 6.0 GHz

DC - 1.0 GHz

1.0 - 2.0 GHz

2.0 - 4.0 GHz

4.0 - 6.0 GHz

DC - 4.0 GHz

4.0 - 6.0 GHz

= +25° C

A

14.0

13.0

12.5

13.5

12.0

10.0

16.0

15.0

14.5

0.004

0.007

0.012

8
7
8

15.5

15.0

13.0

31.5
30
27
24

4.5
5

0.007

0.012

0.016

dB
dB
dB

dB/ °C
dB/ °C
dB/ °C

dB
dB
dB

dBm
dBm
dBm

dBm
dBm
dBm
dBm

dB

8 - 74

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v00.0204

HMC311ST89

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 6.0 GHz

Broadband Gain & Return Loss Gain vs. Temperature

20

15

10

5

0

-5

RESPONSE (dB)

-10

-15

-20
123456789

S21
S11
S22

FREQUENCY (GHz)

Input Return Loss vs. Temperature

0

-5

20
19
18
17
16
15
14
13
12
11

GAIN (dB)

10

9
8
7
6
5
4

012345678

+25C
+85C

-40C

FREQUENCY (GHz)

Output Return Loss vs. Temperature

0

-5

8

AMPLIFIERS - SMT

-10

+25C

-15

INPUT RETURN LOSS (dB)

-20

012345678

+85C

-40C

FREQUENCY (GHz)

Reverse Isolation vs. Temperature

0

-5

-10

-15

-20

REVERSE ISOLATION (dB)

-25

012345678

FREQUENCY (GHz)

+25C
+85C

-40C

-10

-15

OUTPUT RETURN LOSS (dB)

-20
012345678

+25C
+85C

-40C

FREQUENCY (GHz)

Noise Figure vs. Temperature

10

9

8

7

6

5

4

3

NOISE FIGURE (dB)

2

1

0

12345678

+25C
+85C

-40C

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 75

MICROWAVE CORPORATION

v00.0204

HMC311ST89

InGaP HBT GAIN BLOCK

P1dB vs. Temperature Psat vs. Temperature

8

18

16

14

12

10

P1dB (dBm)

8

6

4

012345678

FREQUENCY (GHz)

Power Compression @ 1 GHz

AMPLIFIERS - SMT

18

16

14

12

10

8

6

4

2

0

Pout (dBm), GAIN (dB), PAE (%)

-2

-4

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6

INPUT POWER (dBm)

+25C
+85C

-40C

Pout
Gain
PAE

MMIC AMPLIFIER, DC - 6.0 GHz

18

16

14

12

10

Psat (dBm)

8

6

4

012345678

Power Compression @ 6 GHz

18

16

14

12

10

8

6

4

2

0

Pout (dBm), GAIN (dB), PAE (%)

-2

-4

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6

+25C
+85C

-40C

FREQUENCY (GHz)

INPUT POWER (dBm)

Pout
Gain
PAE

8 - 76

Output IP3 vs. Temperature

34

32

30

28

26

24

22

20

OIP3 (dBm)

18

16

14

12

10

012345678

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

+25C
+85C

-40C

FREQUENCY (GHz)

Gain, Power, OIP3 & Supply Current vs.
Supply Voltage @ 1 GHz

40

35

30

25

20

15

10

5

GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)

4.5 4.75 5 5.25 5.5

Order Online at www.hittite.com

80

70

60

Icq (mA)

50

40

30

Gain
P1dB

20

Icq

Vs (Vdc)

Psat

OIP3

10

MICROWAVE CORPORATION

v00.0204

HMC311ST89

InGaP HBT GAIN BLOCK

Absolute Maximum Ratings

Collector Bias Voltage (Vcc) +7 Volts

RF Input Power (RFin)(Vcc = +3.9 Vdc) +10 dBm

Junction Temperature 150 °C

Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C)

Thermal Resistance
(junction to lead)

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +85 °C

0.34 W

191 °C/W

Outline Drawing

MMIC AMPLIFIER, DC - 6.0 GHz

8

AMPLIFIERS - SMT

NOTES:

1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY

3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 77

MICROWAVE CORPORATION

v00.0204

HMC311ST89

InGaP HBT GAIN BLOCK

Pin Descriptions

8

Pin Number Function Description Interface Schematic

1 RFIN

3 RFOUT

2, 4 GND

AMPLIFIERS - SMT

Application Circuit

MMIC AMPLIFIER, DC - 6.0 GHz

This pin is DC coupled.

An off chip DC blocking capacitor is required.

RF output and DC Bias for the output stage.

These pins and package bottom must be connected to

RF/DC ground.

Note:

1. Select Rbias to achieve Icq using equation below,
Rbias

2. External blocking capacitors are required on
RFIN and RFOUT.

>

22 Ohm.

Icq = Vs - 3.9
Rbias

Recommended Component Values

Component

L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 3.3 nH 3.3 nH

C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF

50 900 1900 2200 2400 3500 5200 5800

Frequency (MHz)

8 - 78

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v00.0204

HMC311ST89

InGaP HBT GAIN BLOCK

Evaluation PCB

MMIC AMPLIFIER, DC - 6.0 GHz

8

AMPLIFIERS - SMT

List of Materials for Evaluation PCB 108313*

Item Description

J1 - J2 PC Mount SMA Connector

J3 - J4 DC Pin

C1, C2 Capacitor, 0402 Pkg.

C3 100 pF Capacitor, 0402 Pkg.

C4 1000 pF Capacitor, 0603 Pkg.

C5 2.2 µF Capacitor, Tantalum

R1 Resistor, 0805 Pkg.

L1 Inductor, 0603 Pkg.

U1 HMC311ST89

PCB** 107368 Evaluation PCB

** Circuit Board Material: Rogers 4350

* Reference this number when ordering complete evaluation PCB.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

The circuit board used in the fi nal application should use
RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown. A suffi cient number of
VIA holes should be used to connect the top and bottom
ground planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.

8 - 79