Datasheet HMC287MS8 Datasheet (hittite)

查询HMC287MS8供应商

MICROWAVE CORPORATION

Typical Applications

8

LNA for Spread Spectrum Applications:

• BLUETOOTH

• HomeRF

• 802.11 WLAN

• 2.5 GHz Radios

Functional Diagram

AMPLIFIERS - SMT

v01.0701

HMC287MS8

GaAs MMIC LOW NOISE AMPLIFIER

with AGC, 2.3 - 2.5 GHz

Features

Gain: 21 dB

Noise Figure: 2.5 dB

Gain Adjustment: 30 dB

Single Positive Supply: +3V

No External Components

Ultra Small Package: MSOP8G

General Description

The HMC287MS8 is a low cost Low Noise Ampli­fi er (LNA) offering 21 dB of gain and a 2.5 dB noise
fi gure from a single positive +3V supply that requires
only 9 mA. The HMC287MS8G can be used as a
variable gain LNA, offering 30 dB of gain control,
which is controlled with a 0 to 3V analog voltage.
The typical output 1dB compression point is +3
dBm and OIP3 is +7 dBm when in the maximum
gain state. The compact LNA design utilizes on­chip matching for repeatable gain and noise fi gure
performance and eliminates the need for external
matching circuitry to reduce the overall size of the
LNA function.

8 - 28

Electrical Specifi cations, T

Parameter Min. Typ. Max. Units

Frequency Range 2.3 - 2.5 GHz

Gain 15 21 27 dB

Gain Variation Over Temperature 0.03 0.04 dB/°C

Gain Adjustment Range (Vctl 0 to +3V) 30 dB

Noise Figure (Vctl = 0V) 2.5 3.0 dB

Input Return Loss 5 10 dB

Output Return Loss 3 6 dB

Output 1 dB Compression (P1dB) -2 3 dBm

Output Third Order Intercept (IP3) 3 7 dBm

Control Voltage (Vctl) 0 Vdd Vdc

Supply Current (Idd)(Vdd = +3.0 Vdc) 9 15 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

= +25° C, Vdd= +3V

A

Order Online at www.hittite.com

MICROWAVE CORPORATION

v01.0701

HMC287MS8

GaAs MMIC LOW NOISE AMPLIFIER

Broadband Gain
& Return Loss, Vctl = 0V

35

30

25

20

15

10

5

0

Response (dB)

-5

-10

-15

-20

-25

1.6 1.8 2 2.2 2.4 2.6 2.8 3

FREQUENCY (GHz)

Gain vs. Temperature, Vctl = 0V

30

25

20

GAIN (dB)

15

10

2.2 2.3 2.4 2.5 2.6

FREQUENCY (GHz)

+ 85 C

-40 C
+25 C

S21
S11
S22

with AGC, 2.3 - 2.5 GHz

Gain Over Control Voltage Range

25

20

15

10

5

Gain (dB)

0

-5

-10

-15

2.2 2.3 2.4 2.5 2.6

FREQUENCY (GHz)

Noise Figure
vs. Temperature, Vctl = 0V

5

4.5

4

3.5

3

2.5

2

1.5

NOISE FIGURE (dB)

1

0.5

0

2.2 2.3 2.4 2.5 2.6

FREQUENCY (GHz)

0V

1.2V

1.8V

2.4V

3V

+25 C
+85 C

-40 C

8

AMPLIFIERS - SMT

Input Return Loss
vs. Temperature, Vctl = 0V

0

-5

-10

-15

INPUT RETURN LOSS (dB)

-20

2.2 2.3 2.4 2.5 2.6

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Output Return Loss
vs. Temperature, Vctl = 0V

0

+85 C

-40 C
+25 C

Order Online at www.hittite.com

-5

-10

-15

OUTPUT RETURN LOSS (dB)

-20

2.2 2.3 2.4 2.5 2.6

FREQUENCY (GHz)

+85 C

-40 C
+25 C

8 - 29

MICROWAVE CORPORATION

v01.0701

HMC287MS8

GaAs MMIC LOW NOISE AMPLIFIER

Gain vs. Control Voltage@ 2.4 GHz Power Compression@ 2.4 GHz, Vctl = 0V

8

24
22
20
18
16
14
12
10

8
6

Gain (dB)

4
2
0

-2

-4

-6

-8

-10

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

Control Voltage (Vdc)

Input Return Loss
Over Control Voltage Range

AMPLIFIERS - SMT

0

-5

-10

-15

-20

with AGC, 2.3 - 2.5 GHz

24
22
20
18
16
14
12
10

8
6
4
2
0

Pout (dBm), Gain (dB)

-2

-4

-6

-8

-10

-30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10

Output Return Loss
Over Control Voltage Range

0

-5

-10

Output Power (dBm)

Gain (dB)

Input Power (dBm)

0V

1.0V

-25

Input Return Loss (dB)

-30

-35

2.2 2.3 2.4 2.5 2.6

FREQUENCY (GHz)

Noise Figure and
Output IP3 vs. Control Voltage

Frequency = 2.4 GHz

VCTL Noise Figure OIP3 (dBm)*

0V 2.5 7.1

1.7V 4.0 -4.4

3.0V 10.0 -12.9

* Two-tone input power = -30 dBm per tone.

Vctl= 3V
Vctl= 1.0V
Vctl= 0V

-15

Output Return Loss (dB)

-20

2.2 2.3 2.4 2.5 2.6

FREQUENCY (GHz)

3V

Reverse Isolation
vs. Temperature, Vctl = 0V

-30

-35

-40

-45

-50

Reverse Isolation (dB)

-55

-60

2.2 2.3 2.4 2.5 2.6

FREQUENCY (GHz)

+85 C

-40 C
+25 C

8 - 30

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v01.0701

HMC287MS8

GaAs MMIC LOW NOISE AMPLIFIER

Absolute Maximum Ratings

Drain Bias Voltage (Vdd) +7.0 Vdc

Control Voltage Range (Vctl) -0.2V to Vdd

RF Input Power (RFin)(Vdd = +3.0 Vdc) 0 dBm

Channel Temperature 150 °C

Continuous Pdiss (T = 85 °C)
(derate 5.62 mW/°C above 85 °C)

Thermal Resistance
(channel to lead)

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +85 °C

0.365 W

178 °C/W

Outline Drawing

with AGC, 2.3 - 2.5 GHz

Gain Control

Vctl (Vdc) Gain State

0.0 Maximum 25

1.5 Middle 25

Vdd Minimum 25

8

Typical

Ictl (uA)

AMPLIFIERS - SMT

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 31

MICROWAVE CORPORATION

v01.0701

HMC287MS8

GaAs MMIC LOW NOISE AMPLIFIER

Evaluation PCB

8

AMPLIFIERS - SMT

with AGC, 2.3 - 2.5 GHz

8 - 32

List of Material

Item Description

J1, J2 PC Mount SMA Connector

J3, J4 DC Pin

U1 HMC287MS8 Amplifi er

PCB* Evaluation Board 1.6” x 1.5”

*Circuit Board Material: Rogers 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

The circuit board used in the fi nal application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads and exposed
paddle should be connected directly to the ground plane
similar to that shown. A suffi cient number of VIA holes
should be used to connect the top and bottom ground
planes. The evaluation circuit board shown is available from
Hittite upon request.

MICROWAVE CORPORATION

v01.0701

HMC287MS8

GaAs MMIC LOW NOISE AMPLIFIER

Notes:

with AGC, 2.3 - 2.5 GHz

8

AMPLIFIERS - SMT

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 33