Fairchild Semiconductor MMBT200A, PN200, PN200A Datasheet

Discrete POWER & Signal

Technologies

PN200 / MMBT200 / PN200A / MMBT200A

PN200
PN200A

C

B

E

TO-92

MMBT200
MMBT200A

C

SOT-23

Mark: N2 / N2A

B

E

PNP General Purpose Amplifier

This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter Voltage 45 V
Collector-Base Voltage 75 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

PN200A *MMBT200A

P

D

R

θ

JC

R

θ

JA

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 1997 Fairchild Semiconductor Corporation

Total Device Dissipation

Derate above 25°C

Ther mal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357

625

5.0

350

2.8

mW

mW/°C

C/W

°

C/W

°

PNP General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

CES

I

EBO

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

sat

BE(

Collector-Base Breakdown Voltage

I

= 10 µA, IB = 0

C

60 V
Collector-Emitter Breakdo wn Volta ge* IC = 1.0 mA, IE = 0 45 V
Emitter-Base Breakdown Vo ltage

I

= 10 µA, IC = 0

E

6.0 V
Collector Cutoff Current VCB = 50 V, IE = 0 50 nA
Collector Cutoff Current VCE = 40 V, IE = 10 50 nA
Emitter Cutoff Current VEB = 4.0 V, IC = 0 50 nA

DC Current Gain

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

)

Base-Emitter Satura ti on Voltage IC = 10 mA, IB = 1.0 mA

)

I

= 100 µA, VCE = 1.0 V

C

I

= 10 mA, VCE = 1.0 V

C

= 100 mA, VCE = 1.0 V*

I

C

I

= 150 mA, VCE = 5.0 V*

C

I

= 200 mA, IB = 20 mA*

C

= 200 mA, IB = 20 mA*

I

C

200
200A
200
200A
200A
200
200A

80
240
100
300
100
100
100

450
600

350

0.2

0.4

0.85

1.0

V
V
V
V

PN200 / MMBT200 / PN200A / MMBT200A

SMALL SIGNAL CHARACTERISTICS

f

T

C

obo

NF Noise Figure

Current Gain - Bandwidth Product V
Output Capacitance VCB = 10 V, f = 1.0 MHz 6.0 pF

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Typical Characteristics

T y pical Pulsed Current Gain

vs Collector Current

500

125 °C

400

300

25 °C

200

- 40 °C

100

0

0.01 0.1 1 10 100

FE

h - TYPICAL PULSED CURRENT GAIN

I - COLLECTOR CURRENT (mA)

C

V = 5V

CE

= 20 V, IC = 20 mA 250 MHz

CE

I

= 100 µA, VCE = 5.0 V,

C

= 2.0 kΩ, f = 1.0 kHz

R

G

200

200A

5.0

4.0

Collector-Emitter Saturation
Voltage vs Collector Current

0.3

0.25

β

= 10

0.2

0.15

0.1

0.05
0

0.1 1 10 100 300

V - COLLECTOR EMITTER VOLTAGE (V)

CESAT

I - COLLECTOR CURRENT (mA)

C

125 ºC

25 °C

- 40 ºC

dB
dB