Fairchild Semiconductor MMBT100A, MMBT100, PN100, PN100A Datasheet
Discrete POWER & Signal
Technologies
PN100 / MMBT100 / PN100A / MMBT100A
PN100
PN100A
C
B
E
TO-92
MMBT100
MMBT100A
C
SOT-23
Mark: NA / NA1
B
E
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Volt age 45 V
Collector-Base Voltage 75 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol Characteristic Max Units
PN100A *MMBT100A
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357
625
5.0
350
2.8
mW
mW/°C
°C/W
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
Collector-Base Breakdown Voltage
I
= 10 µA, IB = 0
C
75 V
Collector-Emitter Brea kdown Voltage* IC = 1 mA, IE = 0 45 V
Emitter-Base Breakdown Voltage
I
= 10 µA, IC = 0
E
6.0 V
Collector Cut off Current VCB = 60 V 50 nA
Collector Cut off Current VCE = 40 V 50 nA
Emitter Cutoff Current VEB = 4 V 50 nA
DC Current Gain
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
I
= 100 µA, VCE = 1.0 V
C
= 10 mA, VCE = 1.0 V
I
C
I
= 100 mA, VCE = 1.0 V*
C
I
= 150 mA, VCE = 5.0 V*
C
I
= 200 mA, IB = 20 mA*
C
I
= 200 mA, IB = 20 mA*
C
100
100A
100
100A
100
100A
80
240
100
300
100
100
100
450
600
350
0.2
0.4
0.85
1.0
V
V
V
V
PN100 / MMBT100 / PN100A / MMBT100A
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF Noise Figure
Current Gain - Bandwidth Pro duct V
Output Capacitance VCB = 5.0 V, f = 1.0 MHz 4.5 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
400
300
200
100
0
FE
10 20 30 50 100 200 300 500
h - TYPICAL PULSED CURRENT GAIN
125 °C
25 °C
- 40 °C
I - COLLECTOR CURRENT (mA)
C
Vce = 5V
= 20 V, IC = 20 mA 250 MHz
CE
I
= 100 µA, VCE = 5.0 V,
C
R
= 2.0 kΩ, f = 1.0 kHz
G
100
100A
5.0
4.0
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
= 10
β
0.3
125 °C
25 °C
- 40 °C
0.2
0.1
1 10 100 400
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
dB
dB
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