Fairchild Semiconductor MMBD914 Datasheet
MMBD914
2 NC31
CONNECTION DIAGRAM
MMBD914
Discrete POWER & Signal
Technologies
3
3
5D
2
SOT-23
1
High Conductance Ultra Fast Diode
Sourced from Process 1P. See 1N4148 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Working Inverse Voltage 75 V
Average Rectified Current 200 mA
DC For ward Curre nt 600 mA
Recurrent Peak Forward Current 700 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -55 to +150
Operating Junction Temperature 150 °C
12
1.0
2.0
A
A
°C
1997 Fairchild Semiconductor Corporation
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMBD914*
P
D
R
θ
JA
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Total De vice Dissipat i on
Derate above 25°C
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
°C/W
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
V
FM
Br eakdo w n Volt ag e IR = 100 µA
IR = 5.0 µA
Reverse Current VR = 20 V
= 20 V, TA = 150°C
V
R
= 75 V
V
R
100
75
25
50
5.0
nA
µ
µ
Forward Voltage IF = 10 mA 1.0 V
Diode Capacitance VR = 0, f = 1.0 M Hz 4.0 pF
Reverse Recovery Time IF = 10 mA, VR = 6.0 V,
= 1.0 m A, RL = 100
I
Peak Forward Recovery Voltage IF = 50 mA
RR
PULSE WIDTH
PEAK SQUARE WAVE
= 0.1 µS
5 kHz - 100 kHz
REP RATE
Ω
4.0 nS
2.5 v
V
V
A
A
MMBD914
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