Fairchild Semiconductor MMBD701 Datasheet
PACKAGE
SOT-23
TO-236AB (Low)
Schottky Barrier Diode
Sourced from Process GE
MMBD701
3
5HF
1 2
CONNECTION DIAGRAM
3
2 NC
1
PACKAGE
SOT-23
TO236AB
Absolute Maximum Ratings* TA = 25
O
C unless otherwise noted
Sym Parameter Value Units
T
T
W
P
stg
J
iv
F
Storage Temperature -55 to +150
Operating Junction Temperature -55 to +125 OC
Working Inverse Voltage 35 V
Forward Power Dissipation @ TA = 25OC 200 mW
Derate above 25OC 2.0 Mw/OC
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
O
C
ADVANCED INFORMATION ONLY
NOT IN PRODUCTION
Electrical Characteristics TA = 25
O
C unless otherwise noted
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVBreakdown Voltage 70 V IR= 10 uA
IRReverse Leakage 200 nA VR= 35 V
VFForward Voltage 500 mV IF= 1.0 mA
1.0 V IF= 10 mA
CTCapacitance 1.0 pF VR= 20 V
f = 1.0 MHz
© 1997 Fairchild Semiconductor Corporation
0.019 (0.483)
0.015 (0.381)
3
0.098 (2.489)
0.083 (2.108)
0.040 (1.016)
0.035 (0.889)
3 CHARACTERS MAX
1
0.080 (2.032)
0.070 (1.778)
0.120 (3.048)
0.110 (2.794)
0.055 (1.397)
0.047 (1.194)
2
LOW PROFILE 0.041 (1.041)
0.024 (0.810)
0.018 (0.457)
(49) 0.035 (0.889)
LOW PROFILE 0.0040 (0.102)
(49) 0.0005 (0.013)
0.0059 (0.150)
0.0035 (0.089)
SOT-23
TO-236AB (LOW PROFILE)
22-August-1994
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