Fairchild Semiconductor MMBD4148CA, MMBD4148CC, MMBD4148SE, MMBD4148 Datasheet
Discrete POWER & Signal
MMBD4148 / SE / CC / CA
MMBD4148 / SE / CC / CA
Technologies
CONNECTION DIAGRAMS
3
4148
2 NC
1
3
4148CC 4148CA
21
3
4148SE
21
3
21
3
SOT-23
3
5H
12
2
1
MMBD4148 5H MMBD4148CA D6
MMBD4148CC D5 MMBD4148SE D4
MARKING
High Conductance Ultra Fast Diode
Sourced from Process 1P. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
Working Inverse Voltage 75 V
Average Rectified Current 200 mA
DC Forward Current 600 mA
Recurren t Peak Forward Current 700 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -55 to +150
Operating Junction Temperature 150
1.0
2.0
A
A
°
°
C
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMBD4148/SE/CC/CA*
P
D
R
θ
JA
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
ã 1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
350
2.8
Thermal Resistan ce, Junction to Ambient 357
mW
mW/°C
C/W
°
µAµ
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
Breakdown Voltage
I
= 100 µA
R
I
= 5.0 µA
R
Reverse Current VR = 20 V
V
= 20 V, TA = 150°C
R
V
= 75 V
R
100
75
25
50
5.0
nA
Forward Voltag e IF = 10 mA 1.0 V
Diode Capacitance VR = 0, f = 1.0 MHz 4.0 pF
Reverse Re covery Time IF = 10 mA, VR = 6.0 V,
I
= 1.0 mA, RL = 100
RR
Ω
4.0 nS
V
V
A
MMBD4148 / SE / CC / CA
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