Fairchild Semiconductor MMBD301 Datasheet

PACKAGE

SOT-23

TO-236AB (Low)

Schottky Barrier Diode

Sourced from Process GD

MMBD301

3

4T

1 2

DISCRETE POWER AND SIGNAL

TECHNOLOGIES

CONNECTION DIAGRAM

3

2 NC

1

PACKAGE

SOT-23

TO236AB

Absolute Maximum Ratings* TA = 25

O

C unless otherwise noted

Sym Parameter Value Units

T
T
W
P

stg
J

iv

F

Storage Temperature -55 to +150
Operating Junction Temperature -55 to +125 OC
Working Inverse Voltage 25 V
Forward Power Dissipation @ TA = 25OC 200 mW
Derate above 25OC 2.0 Mw/OC

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

O

C

Electrical Characteristics TA = 25

O

C unless otherwise noted

SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS

BVBreakdown Voltage 30 V IR= 10 uA
IRReverse Leakage 200 nA VR= 25 V
VFForward Voltage 450 mV IF= 1.0 mA

600 mV IF= 10 mA

CTCapacitance 1.5 pF VR= 15 V

f = 1.0 MHz

© 1997 Fairchild Semiconductor Corporation

DISCRETE POWER AND SIGNAL

TECHNOLOGIES

0.019 (0.483)

0.015 (0.381)

3

0.098 (2.489)

0.083 (2.108)

0.040 (1.016)

0.035 (0.889)

3 CHARACTERS MAX

1

0.080 (2.032)

0.070 (1.778)

0.120 (3.048)

0.110 (2.794)

0.055 (1.397)

0.047 (1.194)

2

LOW PROFILE 0.041 (1.041)

0.024 (0.810)

0.018 (0.457)

(49) 0.035 (0.889)

LOW PROFILE 0.0040 (0.102)
(49) 0.0005 (0.013)

0.0059 (0.150)

0.0035 (0.089)

SOT-23

TO-236AB (LOW PROFILE)

22-August-1994

0.120” MINIMUM

(3.048)

DISCRETE POWER AND SIGNAL

TECHNOLOGIES

0.030” +/- 0.005”

(0.762 +/- 0.127)

0.035” TYPICAL

(0.889)

RECOMMENDED SOLDER PADS

FOR

0.060” +/- 0.005”

(1.524 +/- 0.127)

SOT-23