Fairchild Semiconductor MMBD1704A, MMBD1705, MMBD1705A, MMBD1704, MMBD1701A Datasheet
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MMBD1701/A / 1703/A / 1704/A / 1705/A
3
3
2
SOT-23
1
MMBD1701 85 MMBD1701A 85A
MMBD1703 87 MMBD1703A 87A
MMBD1704 88 MMBD1704A 88A
MMBD1705 89 MMBD1705A 89A
High Conductance Low Leakage Diode
85
12
MARKING
Discrete POWER & Signal
Technologies
CONNECTION DIAGRAMS
1701
1704
3
2 NC
1
3
21
3
1703
21
3
1705
21
MMBD1701/A / 1703/A / 1704/A / 1705/A
Sourced from Process 1T.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
Working Inverse Voltage 20 V
Average Rectified Current 50 mA
DC Forward Current 150 mA
Recurren t Peak Forward Current 150 mA
Peak Forward Surge Current
Pulse width = 1.0 second 250 mA
Storage Temperature Range -55 to +150
Operating Junction Temperature 150
°
°
C
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMBD1701/A /1703/A-1705/A*
P
D
R
θ
JA
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Total Dev ice Dissipation
Derate above 25°C
350
2.8
Thermal Resistan ce, Junction to Ambient 357
mW
mW/°C
C/W
°
1997 Fairchild Semiconductor Corporation
MMBD1700 Rev. B
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
Breakdown Voltage
I
= 5.0 µA
R
30 V
Reverse Current VR = 20 V 50 nA
Forward Voltage
I
= 10 µA
F
I
= 100 µA
F
I
= 1.0 mA
F
I
= 10 mA
F
I
= 20 mA
F
I
= 50 mA
F
420
520
640
760
810
0.89
500
610
740
880
950
1.1
mV
mV
mV
mV
mV
Diode Capacitance VR = 0, f = 1.0 MHz 1.0 pF
Reverse Recovery Time
I
MMBD1701-1705
MMBD1701A-1705A
= IR = 10 mA IRR = 1.0 mA,
F
= 100
R
I
R
Ω
L
= IR = 10 mA IRR = 1.0 mA,
F
= 100
Ω
L
700
1.0
pS
nS
V
Typical Characteristics
MMBD1701/A / 1703/A / 1704/A / 1705/A
REVERSE VOLT AGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
60
Ta= 25°C
50
R
V - REVERSE VOLTAGE (V)
40
1 2 3 5 10 20 30 50 100
I - REVERSE CURRENT (uA)
R
FORWA RD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
600
Ta= 25°C
550
500
450
400
350
F
V - FORWARD VOLTAGE (mV)
300
1 2 3 5 10 20 30 50 100
I - FORWARD CURRENT (uA)
F
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 1 to 22 V
10
Ta= 25°C
5
0
R
R
I - REVERSE CURRENT (nA)
I
1 2 3 5 10 20
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten (10) Degr ee C i ncr ease in Temperature
FORWARD VOLTAGE vs FORWA RD CURRENT
VF - 0.1 to 10 mA
850
Ta= 25°C
800
750
700
650
600
F
V - FORWARD VOLTAGE (mV)
550
0.1 0.2 0.3 0.5 1 2 3 5 10
F
I - FORWARD CURRENT (mA)
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