Fairchild Semiconductor MMBD1503, MMBD1503A, MMBD1501, MMBD1501A, MMBD1504A Datasheet
...
Discrete POWER & Signal
Technologies
MMBD1501/A / 1503/A / 1504/A / 1505/A
MMBD1501/A / 1503/A / 1504/A / 1505/A
3
SOT-23
3
11
12
2
MMBD1501 11 MMBD1501A A11
1
MMBD1503 13 MMBD1503A A13
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
MARKING
CONNECTION DIAGRAMS
3
1501
2 NC
1
3
1504
21
3
1503
21
3
1505
21
High Conductance Low Leakage Diode
Sourced from Process 1L.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Working Inverse Voltage 180 V
Average Rectified Current 200 mA
DC Forward Current 600 mA
Recurren t Peak Forward Current 700 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -55 to +150
Operating Junction Temperature 150
1.0
2.0
A
A
°
°
C
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMBD1501/A/ 1503-1505/A*
P
D
R
θ
JA
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
ã 1997 Fairchild Semiconductor Corporation
Total Dev ice Dissipation
Derate above 25°C
350
2.8
Thermal Resistan ce, Junction to Ambient 357
mW
mW/°C
C/W
°
µ
µ
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
Breakdown Voltage
I
= 5.0 µA
R
Reverse Current VR = 125 V
= 125 V, TA = 150°C
V
R
V
= 180 V
R
V
= 180 V, TA = 150°C
Forward Voltage
R
IF = 1.0 mA
I
= 10 mA
F
I
= 50 mA
F
I
= 100 mA
F
I
= 200 mA
F
= 300 mA
I
F
200 V
1.0
3.0
10
5.0
620
720
800
830
0.87
0.9
720
830
890
930
1.1
1.15
nA
nA
mV
mV
mV
mV
Diode Capacitance VR = 0, f = 1.0 MHz 4.0 pF
A
A
V
V
Typical Characteristics
MMBD1501/A / 1503/A / 1504/A / 1505/A
REVERSE VOLTA GE vs REVERSE CURRENT
BV - 3.0 to 100 uA
325
Ta= 25°C
300
275
R
V - REVERSE VOLTAGE (V)
250
3 5 10 20 30 50 100
I - REVERSE CURRENT (uA)
R
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
Ta= 25°C
550
500
450
400
F
F
V
V - FORWARD VOLTAGE (mV)
350
1 2 3 5 10 20 30 50 100
F
I - FORWARD CURRENT (uA)
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 130 - 205 Vo lts
3
Ta= 25°C
2
1
0
R
I - REVERSE CURRENT (nA)
130 150 170 190
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten (10) Degree C increase in Temperature
205
FORWARD VOL TAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
800
Ta= 25°C
750
700
650
600
550
F
F
V
V - FORWARD VOLTAGE (mV)
500
0.1 0.2 0.3 0.5 1 2 3 5 10
F
I - FORWARD CURRENT (mA)
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