Fairchild Semiconductor H11AV2A-M, H11AV2-M, H11AV1A-M, H11AV1-M Datasheet

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

6

H11AV1S-M, H11AV2S-M

DESCRIPTION

PACKAGE OUTLINE

6

1

H11AV1-M, H11AV2-M

6

1

H11AV1A-M, H11AV2A-M

SCHEMATIC

1

2

3NC

1

PIN 1. ANODE

2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. BASE

6

5

4

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line white package.

FEATURES

• H11AV1 and H11AV2 feature 0.3" input-output lead spacing

• H11AV1A and H11AV2A feature 0.4" input-output lead spacing

• UL recognized (File #E90700, Vol. 2)

• VDE recognized (File #102497)

- Add option V (e.g., H11AV1AV-M)

APPLICATIONS

•Power supply regulators

• Digital logic inputs

• Microprocessor inputs

© 2003 Fairchild Semiconductor Corporation

Page 1 of 10

6/30/03

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

(T

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Units

TOTAL DEVICE

Storage Temperature

Operating Temperature

Wave solder temperature (see page 9 for reflow solder profiles)

Total Device Power Dissipation @ T
Derate above 25°C

EMITTER

DC/Average Forward Input Current

Reverse Input Voltage

LED Power Dissipation @ T

= 25°C

A

Derate above 25°C

DETECTOR

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Collector Voltage

Detector Power Dissipation @ T
Derate above 25°C

A

= 25°C

A

= 25°C

= 25°C unless otherwise specified)

A

T

STG

T

OPR

T

SOL

P

D

I

F

V

R

P

D

V

CEO

V

CBO

V

ECO

P

D

-40 to +150 °C

-40 to +100 °C

260 for 10 sec °C

250 mW

2.94 mW/°C

60 mA

6V

120 mW

1.41 mW/°C

70 V

70 V

7V

150 mW

1.76 mW/°C

© 2003 Fairchild Semiconductor Corporation

Page 2 of 10

6/30/03

Ω

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

(T

ELECTRICAL CHARACTERISTICS

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Symbol Min Typ* Max Unit

EMITTER

Input Forward Voltage (I

Reverse Leakage Current (V

DETECTOR

Collector-Emitter Breakdown Voltage (I

Collector-Base Breakdown Voltage (I

Emitter-Collector Breakdown Voltage (I

Collector-Emitter Dark Current (V

Collector-Base Dark Current (V

Capacitance (V

= 10 mA) T

F

= 25°C unless otherwise specified)

A

= 25°C

A

= -55°C 0.9 1.28 1.7

A

= 100°C 0.7 1.05 1.4

T

A

= 6.0 V) I

R

= 1.0 mA, I

C

= 100 µA, I

C

= 100 µA, I

E

= 10 V, I

CE

= 0 V, f = 1 MHz) C

CE

= 0) BV

F

= 0) BV

F

= 0) BV

F

= 0) I

F

= 10 V) I

CB

V

F

R

CEO

CBO

ECO

CEO

CBO

CE

0.8 1.18 1.5

VT

10 µA

70 100 V

70 120 V

710 V

1 50 nA

0.5 nA

8pF

ISOLATION CHARACTERISTICS

Characteristic Test Conditions Symbol Min Typ* Max Units

Input-Output Isolation Voltage (f = 60 Hz, t = 1 sec) V

Isolation Resistance (V

Isolation Capacitance (V

= 500 VDC) R

I-O

= 0 V, f = 1 MHz) C

I-O

Note
* Typical values at T

= 25°C

A

ISO

ISO

ISO

7500 Vac(pk)

11

10

0.2 2 pF

© 2003 Fairchild Semiconductor Corporation

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6/30/03