Fairchild Semiconductor H11A2-M Datasheet
5/7/03
WHITE PACKAGE (-M SUFFIX)
Page 1 of 15
© 2003 Fairchild Semiconductor Corporation
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
BLACK PACKAGE (NO -M SUFFIX)
6
1
6
1
6
1
6
1
6
6
1
1
4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line package.
FEATURES
• Also available in white package by specifying -M suffix, eg. 4N25-M
• UL recognized (File # E90700)
• VDE recognized (File # 94766)
- Add option V for white package (e.g., 4N25V-M)
- Add option 300 for black package (e.g., 4N25.300)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
SCHEMATIC
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
2
1
3NC
5
6
4
5/7/03
4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
Page 2 of 15
© 2003 Fairchild Semiconductor Corporation
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Value Units
TOTAL DEVICE
Storage Temperature
T
STG
-55 to +150 °C
Operating Temperature
T
OPR
-55 to +100 °C
Wave solder temperature (see page 14 for reflow solder profiles)
T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
250
mW
3.3 (non-M), 2.94 (-M)
EMITTER
DC/Average Forward Input Current
I
F
100 (non-M), 60 (-M) mA
Reverse Input Voltage
V
R
6V
Forward Current - Peak (300µs, 2% Duty Cycle)
I
F
(pk)
3A
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
150 (non-M), 120 (-M) mW
2.0 (non-M), 1.41 (-M) mW/°C
DETECTOR
Collector-Emitter Voltage
V
CEO
30 V
Collector-Base Voltage
V
CBO
70 V
Emitter-Collector Voltage
V
ECO
7V
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
150 mW
2.0 (non-M), 1.76 (-M) mW/°C
5/7/03
Page 3 of 15
© 2003 Fairchild Semiconductor Corporation
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
Note
* Typical values at T
A
= 25°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Min Typ* Max Unit
EMITTER
Input Forward Voltage (I
F
= 10 mA) V
F
1.18 1.50 V
Reverse Leakage Current (V
R
= 6.0 V) I
R
0.001 10 µA
DETECTOR
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mA, I
F
= 0) BV
CEO
30 100 V
Collector-Base Breakdown Voltage (I
C
= 100 µA, I
F
= 0) BV
CBO
70 120 V
Emitter-Collector Breakdown Voltage (I
E
= 100 µA, I
F
= 0) BV
ECO
710 V
Collector-Emitter Dark Current (V
CE
= 10 V, I
F
= 0) I
CEO
1 50 nA
Collector-Base Dark Current (V
CB
= 10 V) I
CBO
20 nA
Capacitance (V
CE
= 0 V, f = 1 MHz) C
CE
8pF
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Input-Output Isolation Voltage
(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)
V
ISO
5300 Vac(rms)
(‘-M’, White Package) (f = 60 Hz, t = 1 sec) 7500 Vac(pk)
Isolation Resistance (V
I-O
= 500 VDC) R
ISO
10
11
Ω
Isolation Capacitance
(V
I-O
= &, f = 1 MHz)
C
ISO
0.5 pF
(‘-M’ White Package) 0.2 2 pF
5/7/03
4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
Page 4 of 15
© 2003 Fairchild Semiconductor Corporation
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit
Current Transfer Ratio,
Collector to Emitter
(I
F
= 10 mA, V
CE
= 10 V)
CTR
4N35
4N36
4N37
100
%
H11A1 50
H11A5 30
4N25
4N26
H11A2
H11A3
20
4N27
4N28
H11A4
10
(I
F
= 10 mA, V
CE
= 10 V, T
A
= -55°C)
4N35
4N36
4N37
40
(I
F
= 10 mA, V
CE
= 10 V, T
A
= +100°C)
4N35
4N36
4N37
40
Collector-Emitter
Saturation Voltage
(I
C
= 2 mA, I
F
= 50 mA)
V
CE (SAT)
4N25
4N26
4N27
4N28
0.5
V
(I
C
= 0.5 mA, I
F
= 10 mA)
4N35
4N36
4N37
0.3
H11A1
H11A2
H11A3
H11A4
H11A5
0.4
AC Characteristic
(I
F
= 10 mA, V
CC
= 10 V, R
L
= 100 Ω )
(Fig.20)
T
ON
4N25
4N26
4N27
4N28
H11A1
H11A2
H11A3
H11A4
H11A5
2µs
Non-Saturated
Turn-on Time
Non Saturated
Turn-on Time
(I
C
= 2 mA, V
CC
= 10 V, R
L
= 100 Ω )
(Fig.20)
T
ON
4N35
4N36
4N37
210µs
5/7/03
Page 5 of 15
© 2003 Fairchild Semiconductor Corporation
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
* Typical values at T
A
= 25°C
AC Characteristic Test Conditions Symbol Device Min Typ* Max Unit
Turn-off Time
(I
F
= 10 mA, V
CC
= 10 V, R
L
= 100 Ω )
(Fig.20)
T
OFF
4N25
4N26
4N27
4N28
H11A1
H11A2
H11A3
H11A4
H11A5
2
µs
(I
C
= 2 mA, V
CC
= 10 V, R
L
= 100 Ω )
(Fig.20)
4N35
4N36
4N37
210
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.) (Continued)
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