Fairchild Semiconductor BDX53A, BDX53, BDX53C, BDX53B Datasheet
BDX53/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively
BDX53/A/B/C
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage : BDX53
Collector-Emitter Voltage : BDX53
Emitter-Base Voltage 5 V
Collector Current (DC) 8 A
*Collector Current (Pulse) 12 A
Base Current 0.2 A
Collector Dissipation (TC=25°C) 60 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
I
CBO
I
CEO
IEBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA 2 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = 3A, IB = 12mA 2.5 V
V
BE
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Collector Cut-off Current : BDX53
Collector Cut-off Current : BDX53
Emitter Cut-off Current V
* DC Current Gain V
* Parallel Diode Forward Voltage IF= 3A
TC=25°C unless otherwise noted
: BDX53A
: BDX53B
: BDX53C
: BDX53A
: BDX53B
: BDX53C
TC=25°C unless otherwise noted
: BDX53
I
= 100mA, IB = 0 45
C
: BDX53A
: BDX53B
: BDX53C
V
= 45V, IE = 0
CB
: BDX53A
: BDX53B
: BDX53C
: BDX53A
: BDX53B
: BDX53C
= 60V, IE = 0
V
CB
= 80V, IE = 0
V
CB
V
= 100V, IE = 0
CB
V
= 22V, IB = 0
CE
= 30V, IB = 0
V
CE
= 40V, IB = 0
V
CE
V
= 50V, IB = 0
CE
= 5V, IC = 0 2 mA
EB
= 3V, IC = 3A 750
CE
= 8A
I
F
60
80
100
45
60
80
100
45
60
80
100
1.8
2.5
200
200
200
200
500
500
500
500
2.5 V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
BDX53/A/B/C
100000
10000
1000
, DC CURRENT GAIN
FE
h
100
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
(sat)[V], SATURATION VOLTAGE
1.0
CE
V
0.8
0.6
0.1 1 10
IC[A], COLLECTOR CURRENT
VCE = 3V
IC = 250I
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
(sat)[V], SATURATION VOLTAGE
1.2
BE
V
1.0
0.8
0.1 1 10
IC = 250I
B
IC[A], COLLECTOR CURRENT
3.0
B
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
(sat)[V], FORWARD VOLTAGE
F
0.8
V
0.6
0.4
0.1 1 10
IF[A], FORWARD CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Damper Diode Forward Voltage
100
IC Max. (Pulsed)
10
IC Max. (Continuous)
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
DC
BDX53
BDX53A
BDX53B
BDX53C
10us
1ms
100us
80
70
60
50
40
30
20
[W], POWER DISSIPATION
D
P
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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