Fairchild Semiconductor BD180, BD178, BD176 Datasheet
BD176/178/180
Medium Power Linear and Switching
Applications
• Complement to BD 175/177/179 respectively
BD176/178/180
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
IC
P
C
R
θja
R
θjc
T
J
T
STG
*Collector-Base Voltage : BD176
Collector-Emitter Voltage : BD176
Emitter-Base Voltage - 5 V
Collector Current (DC) - 3 A
*Collector Current (Pulse) - 7 A
Collector Dissipation (TC=25°C) 30 W
Junction to Ambient
Junction to Case
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
I
I
CBO
EBO
Collector Cut-off Current : BD176
Emitter Cut-off Current V
TC=25°C unless otherwise noted
: BD178
: BD180
: BD178
: BD180
TC=25°C unless otherwise noted
: BD176
= - 100mA, IB = 0 - 45
I
C
: BD178
: BD180
V
= - 45V , IE = 0
CB
: BD178
: BD180
= - 60V , IE = 0
V
CB
V
= - 80V , IE = 0
CB
= - 5V, IC = 0 - 1 mA
EB
- 45
- 60
- 80
- 45
- 60
- 80
70 °C/W
8.5 °C/W
- 60
- 80
- 100
- 100
- 100
V
V
V
V
V
V
V
V
V
µA
µA
µA
h
FE1
h
FE2
V
(sat) * Collector-Emitter Saturation Voltage IC = -1 A , IB = - 0.1A - 0.8 V
CE
(on) * Base-Emitter On Vol tage V
V
BE
f
T
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
* DC Current Gain V
Current Gain Bandwidth Product V
= - 2V , IC = - 150mA
CE
= - 2V , IC = - 1A
V
CE
= - 2V , IC = -1 A - 1.3 V
CE
= -10V, IC = - 250mA 3 MHz
CE
40
15
250
hFE Classificntion
Classification 6 10 16
h
* Classification 16: Only BD 176
©2002 Fairchild Semiconductor Corporation Rev. B1, October 2002
FE1
40 ~ 100 63 ~ 160 100 ~ 250
Typical Characteristics
BD176/178/180
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-10
IC MAX. (Pulsed)
IC MAX. (Continuous)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1ms
DC
BD176
VCE = -2V
10µs
100
µ
s
BD180
BD178
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10
VBE(sat)
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B1, October 2002
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