Fairchild Semiconductor BD159, BD158, BD157 Datasheet
BD157/158/159
Low Power Fast Switching Output Stages
• For T.V Radio Audio Output Amplifiers
BD157/158/159
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
PC
T
J
T
STG
Collector-Base Voltage : BD157
Collector-Emitter Voltage : BD157
Emitter-Base Voltage 5 V
Collector Current (DC) 0.5 A
*Collector Current (Pulse) 1.0 A
Base Current 0.25 A
Collector Dissipation (TC=25°C) 20 W
Junction Temperature 50 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
IEBO
hFE
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
*Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off C u r re n t V
* DC Current Gain V
TC=25°C unless otherwise noted
: BD158
: BD159
: BD158
: BD159
TC=25°C unless otherwise noted
: BD157
: BD158
= 1mA, IB = 0 250
I
C
: BD159
: BD157
: BD158
: BD159
= 275V, IE = 0
V
CB
= 325V, IE = 0
V
CB
V
= 375V, IE = 0
CB
= 5V, IC = 0 100 µA
EB
= 10V, IC = 50mA 30 240
CE
275
325
375
250
300
350
300
350
100
100
100
V
V
V
V
V
V
V
V
V
µA
µA
µA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
BD157/158/159
1000
100
10
, DC CURRENT GAIN
FE
h
1
1E-4 1E-3 0.01 0.1 1
0.0001
0.001
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
10
IC MAX. (Pulsed)
1
0.1
1ms
500
µ
s
DC
VCE = 10V
10µs
100µs
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
(sat)[V], SATURATION VOLTAGE
CE
V
0.2
0.0
1E-4 1E-3 0.01 0.1 1
IC = 10 I
B
IC[A], COLLECTOR CURRENT
25
20
15
10
0.01
[A], COLLECTOR CURRENT
C
I
1E-3
1 10 100 1000
BD157
BD158
BD159
VCE[V], COLLECTOR-EMITTER VOLTAGE
5
[W], POWER DISSIPATION
C
P
0
0 2 5 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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