Fairchild Semiconductor BD139, BD135, BD137 Datasheet
BD135/137/139
Medium Power Linear and Switching
Applications
• Complement to BD136, BD138 and BD140 respectively
BD135/137/139
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
PC
P
C
T
J
T
STG
Collector-Base V oltage : BD135
Collector-Emitter Voltage : BD135
Emitter-Base Voltage 5 V
Collector Current (DC) 1.5 A
Collector Current (Pulse) 3.0 A
Base Current 0.5 A
Collector Dissipation (TC=25°C) 12.5 W
Collector Dissipation (Ta=25°C) 1.25 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Pa rame ter Test Condition Min. Typ. Max. Units
(sus) Collector-Emitter Sustaining Voltage
V
CEO
I
CBO
IEBO
hFE1
h
FE2
h
FE3
(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 0.5 V
V
CE
V
(on) Base-Emitter ON Voltage VCE = 2V, IC = 0.5A 1 V
BE
Collector Cut-off Current VCB = 30V, IE = 0 0.1 µA
Emitter Cut-off C u rr e nt VEB = 5V, IC = 0 10 µA
DC Current Gain : ALL DEVICE
TC=25°C unless otherwise noted
: BD137
: BD139
: BD137
: BD139
TC=25°C unless otherwise noted
: BD135
: BD137
: BD139
: ALL DEVICE
: BD135
: BD137, BD139
= 30mA, IB = 0
I
C
VCE = 2V, IC = 5mA
= 2V, IC = 0.5A
V
CE
V
= 2V, IC = 150mA
CE
45
60
80
25
25
40
40
45
60
80
45
60
80
250
160
V
V
V
V
V
V
V
V
V
hFE Classification
Classification 6 10 16
h
FE3
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 100 63 ~ 160 100 ~ 250
Typical Characteristics
BD135/137/139
100
90
80
70
60
50
40
30
, DC CURRENT GAIN
FE
20
h
10
0
10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
[V], BASE-EMITTER VOLTAGE
0.3
BE
V
0.2
0.1
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
(sat)
BE
B
V
= 10 I
C
I
(on)
BE
V
= 5V
CE
V
VCE = 2V
500
450
400
350
300
250
200
150
100
(sat)[mV], SATURATION VOLTAGE
CE
50
V
0
1E-3 0.01 0.1 1 10
B
= 20 I
C
I
B
= 10 I
C
I
IC[A], COLLECTOR CURRENT
10
IC MAX. (Pulsed)
IC MAX. (Continuous)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
10us
1ms
DC
100us
BD135
BD137
BD139
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area
20.0
17.5
15.0
12.5
10.0
7.5
5.0
[W], POWER DISSIPATION
C
P
2.5
0.0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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