BCW71 NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
50
45
5
100
350
150
• Refer to KST2222 for graphs
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figures
BV
BV
BV
BV
I
h
V
V
V
f
C
NF
CBO
T
CBO
CEO
CES
EBO
FE
(sat)
CE
(sat)
BE
(on)
BE
OB
V
V
V
mA
mW
°C
IC=10µA, IE=0
IC=2mA, IB=0
IC=2mA, VEB=0
IE=10µA, IC=0
VCB=20V, IE=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=50mA, IB=2.5mA
IC=50mA, IB=2.5mA
IC=2mA, VCE=5V
VCE=5V, IC=10mA
f=35MHz
VCB=10V, IE=0
f=1MHz
VCE=5V, IC=2.0mA
RG=2KΩ, f=1KHz
SOT-23
1. Base 2. Emitter 3. Collector
50
45
45
5
110
0.21
0.85
0.6
300
100
220
0.25
0.75
V
V
V
V
nA
V
V
V
V
MHz
pF
4
dB
10
Rev. B
1999 Fairchild Semiconductor Corporation
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PRODUCT STATUS DEFINITIONS
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Advance Information
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Formative or
In Design
First Production
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