Fairchild Semiconductor BCW68G Datasheet
BCW68G
C
E
SOT-23
Mark: DG
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at currents to 500 mA. Sourced from Process 63.
B
BCW68G
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 45 V
Collector-Base Voltage 60 V
Emitter-Base Volta ge 5.0 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BCW68C
P
D
R
θ
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Total Device Dissipation
Derate above 25°C
Thermal Resistan ce, Junction to Ambien t 357
350
2.8
mW
mW/°C
C/W
°
ã 1997 Fairchild Semiconductor Corporation
(BR)
(BR)
(BR)
(BR)
µ
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CES
V
CBO
V
EBO
I
CES
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(
sat
V
sat
BE(
Collector-Emitter Breakdo wn Volta ge IC = 10 mA, IB = 0 45 V
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Vo ltage
I
= 10 µA
C
I
= 100 µA, IE = 0
C
I
= 10 µA, IC = 0
E
Collector-Cutoff Current VCE = 45 V
V
= 45 V, TA = 150 °C
CE
Emitter-Cutoff Current VEB = 4.0 V 20 nA
DC Current Gain IC = 10 mA, VCE = 1.0 V
I
= 100 mA, VCE = 1.0 V
C
I
= 300 mA, VCE = 1.0 V
Collector-Emitter Saturation Voltage IC = 300 mA, IB = 30 mA 1.5 V
)
Base-Emitter Satura ti on Voltage IC = 500 mA, IB = 50 mA 2.0 V
)
C
120
160
60
60 V
60 V
5.0 V
20
10
400
nA
BCW68G
A
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF Noise Figure IC = 0.2 mA V, VCE = 5.0 V,
Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V,
f = 100 MHz
Ouput Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 18 pF
Input Capacitance VEB = 0.5 V, IE = 0, f = 1.0 MHz 105 pF
R
= 1.0 kΩ, f = 1.0 kHz,
S
B
= 200 Hz
W
Typical Characteristics
T y pical Pulsed Current Gain
vs Collector Current
500
400
125 °C
300
25 °C
200
100
- 40 °C
0
0.1 0.3 1 3 10 30 100 300
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Collector-Emi tt er Sa tu ra ti on
Voltage vs Collector Curre nt
0.5
0.4
0.3
0.2
0.1
- COLLECTOR EMITTER VOLTAGE (V)
CESAT
= 10
β
0
110100500
100 MHz
10 dB
25 °C
125 ºC
I - COLLECTOR CURRENT (mA)
C
- 40 ºC
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