Fairchild Semiconductor BCP68 Datasheet
BCP68
BCP68
NPN General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers.
4
• Sourced from process 37.
2
1
SOT-223
1. Base 2.4. Collector 3. Emitter
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
P
D
, T
T
J
STG
Electrical Characteristics
Collector-Emitter Voltage 20 V
Collector-Base Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 1 A
Total Device Dissipation
- Derate above 25°C
@ TA=25°C1.5
12
Operating and Storage Junction Temperature Range - 55 ~ +150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage IC = 100µA, IE = 0 25 V
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 20 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V
Collector-Base Cutoff Current VCB = 25V, IE = 0, TA = 25°C
V
= 25V, IE = 0, TA = 125°C
CB
101µA
Emitter-Base Cutoff Current VEB = 5V, IC = 0 10 µA
On Characteristics (1)
h
FE
V
CE(sat)
V
BE(on)
DC Current Gain IC = 5mA, VCE = 10V
= 500mA, VCE = 1V
I
C
= 1A, VCE = 1V
I
C
Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA 0.5 V
Base-Emitter On Voltage IC = 1A, VCE = 1V 1 V
50
85
60
375
3
Watts
mW/°C
mA
©2001 Fairchild Semiconductor Corporation Rev. A, August 2001
Package Demensions
SOT-223
3.00
±0.10
MAX1.80
±0.20
1.75
±0.20
0.08MAX
+0.04
0.06
–0.02
BCP68
±0.20
0.65
±0.30
2.30 TYP
(0.95) (0.95)
±0.20
(0.46)
(0.89)
1.60
4.60
6.50
±0.25
±0.20
0.70
±0.10
3.50
(0.60) (0.60)
0.25
+0.10
–0.05
7.00
0°~10°
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A, August 2001
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