Fairchild Semiconductor BCP56 Datasheet
BCP56
BCP56
Pr3947_REV A
C
E
C
B
SOT-223
NPN General Purpose Amplifier
These devices are designed for general purpose medium power amplifiers and switches requiring collector
currents to 1A. Sourced from Process 39.
Absolute Maximum Ratings* T
A = 25°C unless otherwise noted
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
BCP56
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Symbol
P
D
R
θJA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Total Device Dissipation
Derate above 25°C
A = 25°C unless otherwise noted
Max
Characteristic
BCP56
1
8
Units
V80Collector-Emitter Voltage
V100Collector-Base Voltage
V5Emitter-Base Voltage
A1.2Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
Units
W
mW/°C
°C/W125Thermal Resistance, Junction to Ambient
1998 Fairchild Semiconductor Corporation
ON
CHARACTERISTICS
*
NPN General Purpose Amplifier
BCP56
Pr3947_REV A
(continued)
Electrical Characteristics T
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
A = 25°C unless otherwise noted
I
= 10 mA
C
I
= 100 µA
C
I
= 10 µA
E
V
CB
V
CB
V
EB
= 5 mA, VCE = 2V
I
C
I
= 150 mA, VCE = 2V
C
I
= 500mA, VCE = 2 V
C
I
= 500 m A, IB = 50 mA
C
I
= 500 m A, VCE = 2 V
C
= 30 V
= 30 V, Tj= +125°C
= 5V
25
40
25
100
10
10
250
UnitsMaxMinTest ConditionsParameterSymbol
V80
V100
V5
nA
uA
µA
-
V0.5
V1
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