Fairchild Semiconductor BCP54 Datasheet

BCP54

C

E

C

B

SOT-223

NPN General Purpose Amplifier

This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.2 A. Sourced from Process 38.

BCP54

Discrete POWER & Signal

Technologies

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

Collector-Emitter Voltage 45 V
Collector-Base Voltage 45 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.5 A
Operating and Storage Junction Temperature Range -55 to +150

C

°

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

BCP54

P

D

R

θ

JA

Total Device Dissipa tion

Derate above 25°C

Thermal Resistan ce, Junction to Ambient 83 .3

1.5
12

W

mW/°C

C/W

°

ã 1997 Fairchild Semiconductor Corporation

NPN General Purpose Amplifier

(BR)

(BR)

(BR)

µ

µ

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

CEO

V

CBO

V

EBO

I

CBO

I

EBO

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

BE(on)

Collector-Emitte r Breakdown Voltage IC = 10 mA, IB = 045V
Collector-Base Breakdown Voltag e
Emitter-Base Breakdown Voltage

I

= 100 µA, IE = 0

C

I

= 10 µA, IC = 0

E

Collector-Cutoff Current VCB = 30 V, IE = 0

V

= 30 V, IE = 0, TA = 125°C

CB

Emitter-Cutoff Current VEB = 5.0 V, IC = 0 10

DC Current Gain IC = 5.0 mA, VCE = 2.0 V

I

= 150 mA, VCE = 2.0 V

C

= 500 mA, VCE = 2.0 V

I

Collector-Emitte r Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V

)

C

45 V

5.0 V
100

10

25
40

250

25

nA

A
A

Base-Emitter On Voltage IC = 500 mA, VCE = 2.0 V 1.0 V

BCP54

Typical Characteristics

T ypical Pulsed Current Gain

vs Collector Current

500

V = 5V

CE

125 °C

25 °C

- 40 ºC

0

0.001 0.01 0.1 1 2

C

I - COLLECTOR CURRENT (A)

h - TYPICAL PULSED CURRENT GAIN

400

300

200

100

FE

Collector-Emitter Saturation

Voltage vs Collector Current

0.6

β

= 10

0.5

C

0.4

0.3

0.2

0.1
0

0.01 0.1 1 3

- COLLECTOR-EMITTER VOLTAGE (V)

CESAT

I - COLLECTOR CURRE NT (A)

C

125 º

25°C

- 40 ºC