Fairchild Semiconductor BCP53 Datasheet
BCP53
C
E
C
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 78. See BCP52 for characteristics.
BCP53
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symb ol Parame t er Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 80 V
Collector-Base Voltage 100 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristi c Max Units
BCP53
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 83.3
1.5
12
W
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown
IC = 10 mA , IB = 0 80 V
Voltage
Collector-Base Breakdown Voltage
Emitte r-Ba s e Breakd own Voltag e
= 100 µA, IE = 0
I
C
= 10 µA, IC = 0
I
E
100 V
5.0 V
Collector-Cutoff Current VCB = 30 V, IE = 0
= 30 V, IE = 0, TA = 125°C
V
CB
Emit te r-Cut o ff Cu rre nt VEB = 5.0 V, IC = 0 10
DC Current Gain IC = 5.0 mA, VCE = 2.0 V
= 150 mA, VCE = 2.0 V
I
C
= 500 mA, VCE = 2.0 V
I
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V
)
C
25
40
25
Base-Emitter On Voltage IC = 500 mA, VCE = 2.0 V 1.0 V
100
10
250
nA
µ
µ
A
A
BCP53
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