Fairchild Semiconductor BCP52 Datasheet
BCP52
C
E
C
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 78.
BCP52
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Em i t ter- Base Voltage 5. 0 V
Col l ector Cur re nt - Cont inuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characte rist i c Max Un i ts
BCP52
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junctio n to Ambien t 83.3
1.5
12
W
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 060V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 60 V
Em i t ter- Base Break dow n V oltag e
= 10 µA, IC = 0
I
E
Collector-Cutoff Current VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 125°C
Emitter-Cutoff Current VEB = 5.0 V, IC = 0 10
DC Cu r re n t Gain IC = 5.0 m A, VCE = 2.0 V
= 150 mA, VCE = 2.0 V
I
C
= 500 mA, VCE = 2.0 V
I
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V
)
C
5.0 V
100
10
25
40
250
25
nA
µ
µ
A
A
Base-E m i tter O n V oltage IC = 500 mA, VCE = 2.0 V 1.0 V
BCP52
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
400
300
200
100
FE
h - TYPICAL PULSED CURRENT GAIN
- 40 ºC
0
0.01 0.1 1
I - COLLECTOR CURRENT (A)
C
25 °C
125 °C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collect or Current
0.6
ββ
= 10
0.5
0.4
0.3
0.2
0.1
0
0.01 0.1 1 1.5
CESAT
V - COLLECTOR-EMITT ER VOLTAGE (V)
I - COLLECTOR CURRENT (A)
C
- 40 ºC
25 °C
125 ºC
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