Fairchild Semiconductor BC850, BC849 Datasheet
BC846/847/848/849/850
BC846/847/848/849/850
Switching and Amplifier Applications
3
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC) 100 mA
Collector Power Dissipation 310 mW
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
Ta=25°C unless otherwise noted
: BC846
: BC847/850
: BC848/849
: BC846
: BC847/850
: BC848/849
: BC846/847
: BC848/849/850
80
50
30
65
45
30
6
5
1
2
SOT-23
V
V
V
V
V
V
V
V
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
h
FE
V
CE
V
BE
V
BE
f
T
C
ob
C
ib
NF Noise Figure
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Collector Cut-off Current VCB=30V, IE=0 15 nA
DC Current Gain VCE=5V, IC=2mA 110 800
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
=100mA, IB=5mA
I
C
(sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA
I
=100mA, IB=5mA
C
(on) Base-Emitter On Voltage VCE=5V, IC=2mA
=5V, IC=10mA
V
CE
580 660 700
90
200
700
900
Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF
: BC846/847/848
: BC849/850
: BC849
: BC850
VCE=5V, IC=200µA
f=1KHz, R
V
CE
=2KΩ, f=30~15000Hz
R
G
=2KΩ
G
=5V, IC=200µA
2
1.2
1.4
1.4
250
600
720
10
4
4
3
mV
mV
mV
mV
mV
mV
dB
dB
dB
dB
h
Classification
FE
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800
Marking Code
Type
Mark 8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC
846 847 848 849 850
ABCABCABCABCABC
BC846/847/848/849/850
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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