Fairchild Semiconductor 100350QI, 100350QCX, 100350QC, 100350PC, 100350DC Datasheet

© 2000 Fairchild Semiconductor Corporation DS009884 www.fairchildsemi.com
July 1988 Revised August 2000
100350 Low Power Hex D-Type Latch
100350 Low Power Hex D-Type Latch
General Description
The 100350 contains six D-type latches with true and com­plement outputs, a pa ir of common Enables (E
a
and Eb),
and a common Master Reset (MR). A Q output follows its D input when both E
a
and Eb are LOW. When either Ea or E
b
(or both) are HIGH, a latch stores the last valid data present on its D i npu t b efo re E
a
or Eb went HIGH. The MR
input overrides all o ther inputs and makes the Q outputs LOW. All inputs have 50 k
pull-down resistors.
Features
20% power reduction of the 100150
2000V ESD protection
Pin/function compatible with 100150
Voltage compensated operating range
= −4.2V to 5.7V
Ordering Code:
Devises also availab le in Tape and Reel. Specify by appending th e s uffix let t er “X” to the ordering code.
Logic Symbol
Pin Descriptions
Connection Diagrams
24-Pin DIP
28-Pin PLCC
Order Number Package Number Package Description
100350PC N24E 24-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-010, 0.400 Wide 100350QC V28A 28-Lead Plastic Lead Chip Carrier (PLCC), JEDEC MO-047, 0.450 Square
Pin Names Description
D
0–D5
Data Inputs
E
a
, E
b
Common Enable Inputs (Active LOW) MR Asynchronous Master Reset Input Q
0–Q5
Data Outputs Q
0–Q5
Complementary Data Output s
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100350
Truth Tables
(Each Latch)
Latch Operation
H = HIGH Voltage Level L = LOW Voltage Level
X = Dont Care Note 1: Retains data present before E
positive transition
Asynchronous Operati on
Logic Diagram
Inputs Outputs
D
n
E
a
E
b
MR Q
n
LLLL L HLLL H X H X L Latched (Note 1) X X H L Latched (Note 1)
Inputs Outputs
D
n
E
a
E
b
MR Q
n
XXXH L
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100350
Absolute Maximum Ratings(Note 2)
Above which the useful life may be impaired.
Recommended Operating Conditions
Note 2: The Absolute Maximum Ratings are those value s beyond which
the safety of the dev ice cannot b e guaranteed . The device sh ould not be operated at these limit s. The parametric values defi ned in the Electrical Characteristics tables are not guaranteed at the absolute maximum rating. The Recomm ended O peratin g Cond itions table will defin e the condition s for actual device operation.
Note 3: ESD testing conforms to MIL-STD-883, Method 3015.
DC Electrical Characteristics (Note 4)
V
EE
= 4.5V to 5.7V, VCC = V
CCA
= GND, T
C
= 0°C to +85°C
Note 4: The specified limits represent the worst case value for the parameter. Since these values normally occur at the temperature extremes, additional noise immunity and guard banding ca n be a chie ve d by decr easi ng the allowable system operating ranges. Conditions for testing shown in the tables are cho­sen to guarantee operation under worst case conditions.
DIP AC Electrical Characteristics
V
EE
= 4.2V to 5.7V, VCC = V
CCA
= GND
Storage Temperature (T
STG
) 65°C to +150°C
Maximum Junction Temperature (T
J
) +150°C
V
EE
Pin Potential to Ground Pin 7.0V to +0.5V
Input Voltage (DC) V
EE
to +0.5V
Output Current (DC Output HIGH)
50 mA
ESD (Note 3)
2000V
Case Temperature (T
C
)0°C to +85°C
Supply Voltage (V
EE
) 5.7V to 4.2V
Symbol Parameter Min Typ Max Units Conditions
V
OH
Output HIGH Voltage −1025 −955 −870
mV
VIN =V
IH (Max)
Loading with
V
OL
Output LOW Voltage −1830 −1705 1620 or V
IL (Min)
50 to 2.0V
V
OHC
Output HIGH Voltage −1035
mV
VIN = V
IH (Min)
Loading with
V
OLC
Output LOW Voltage 1610 or V
IL (Max)
50 to 2.0V
V
IH
Input HIGH Voltage −1165 870 mV Guaranteed HIGH Signal for All Inputs
V
IL
Input LOW Voltage −1830 1475 mV Guaranteed LOW Signal for All Inputs
I
IL
Input LOW Current 0.50 µAVIN = V
IL (Min)
I
IH
Input HIGH Current MR 240
D
n
240 µAVIN = V
IH (Max)
Ea, E
b
240
I
EE
Power Supply Inputs Open Current 89 44 mA VEE = 4.2V to 4.8V
93 44 V
EE
= 4.2V to 5.7V
Symbol Parameter
TC = 0°CT
C
= +25°CT
C
= +85°C
Units Conditions
Min Max Min Max Min Max
t
PLH
Propagation Delay
Figures 1, 2
t
PHL
Dn to Output 0.50 1.40 0.50 1.40 0.50 1.50 ns (Transparent Mode)
t
PLH
Propagation Delay
0.75 1.85 0.75 1.85 0.75 2.05 ns
t
PHL
Ea, Eb to Output
t
PLH
Propagation Delay
0.90 2.10 0.90 2.10 0.90 2.10 ns Figures 1, 3
t
PHL
MR to Output
t
TLH
Transition Time
0.35 1.30 0.35 1.30 0.35 1.30 ns Figures 1, 2
t
THL
20% to 80%, 80% to 20%
t
S
Setup Time
Figures 3, 4D0–D
5
1.00 1.00 1.00 ns
MR (Release Time) 1.60 1.60 1.60
t
H
Hold Time, D0–D
5
0.40 0.40 0.40 ns Figure 4
tPW(L) Pulse Width LOW
2.00 2.00 2.00 ns Figure 2
Ea, E
b
tPW(H) Pulse Width HIGH, MR 2.00 2.00 2.00 ns Figure 3
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