enables output voltage swing close to the supply rail
(rail-to-rail output)
5000Vrms, 1 minute isolation
■
■
Under voltage lockout protection (UVLO) with
hysteresis – optimized for driving MOSFETs
Minimum creepage distance of 8.0mm
■
■
Minimum clearance distance of 10mm to 16mm
(option TV or TSV)
Minimum insulation thickness of 0.5mm
■
UL and VDE*
■
■
1,414 peak working insulation voltage (V
= 2,000V
CM
IORM
)
Applications
■
Plasma Display Panel
High performance DC/DC convertor
■
■
High performance switch mode power supply
■
High performance uninterruptible power supply
Isolated Power MOSFET gate drive
■
Description
The FOD3182 is a 3A Output Current, High Speed
MOSFET Gate Drive Optocoupler. It consists of a
aluminium gallium arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS detector with PMOS and
NMOS output power transistors integrated circuit power
stage. It is ideally suited for high frequency driving of
power MOSFETS used in Plasma Display Panels
(PDPs), motor control inverter applications and high
performance DC/DC converters.
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
*Requires ‘V’ ordering option
Functional Block DiagramPackage Outlines
1
NC
NC
2
3
4
ANODE
CATHODE
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
As per DIN EN/IEC 60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety
limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
SymbolParameter Min.Typ.Max.Unit
Climatic Classification 40/100/21
Pollution Degree (DIN VDE 0110/1.89)2
CTIComparative Tracking Index175
V
PR
V
IORM
V
IOTM
External Creepage8mm
External Clearance7.4mm
Insulation Thickness0.5mm
T
Case
I
S,INPUT
P
S,OUTPUT
R
IO
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150VrmsI–IV
For Rated Mains Voltage < 300VrmsI–IV
For Rated Mains Voltage < 450VrmsI–III
For Rated Mains Voltage < 600VrmsI–III
For Rated Mains Voltage < 1000Vrms (Option T, TS)I–III
Input to Output Test Voltage, Method b,
V
x 1.875 = V
IORM
, 100% Production Test with
PR
2651
tm = 1 sec., Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
, Type and Sample Test with
PR
2121
tm = 60 sec.,Partial Discharge < 5 pC
Max Working Insulation Voltage1,414V
Highest Allowable Over Voltage6000V
External Clearance (for Option T or TS - 0.4” Lead Spacing)10.16mm
Safety Limit Values – Maximum Values Allowed in the
Event of a Failure
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T
STG
T
OPR
T
J
T
SOL
Parameter
ValueUnits
Storage Temperature-40 to +125°C
Operating Temperature-40 to +100°C
Junction Temperature-40 to +125°C
Lead Solder Temperature – Wave solder
260 for 10 sec. °C
(Refer to Reflow Temperature Profile, pg. 22)
I
F(AVG)
I
F(tr, tf)
V
I
OH(PEAK)
I
OL(PEAK)
V
– V
DD
V
O(PEAK)
P
O
P
D
Average Input Current
LED Current Minimum Rate of Rise/Fall250ns
R
Reverse Input Voltage 5V
“High” Peak Output Current
“Low” Peak Output Current
SS
Supply Voltage -0.5 to 35V
Output Voltage 0 to V
Output Power Dissipation
Total Power Dissipation
(1)
25mA
(2)
3A
(2)
3A
(4)
250mW
(5)
295mW
DD
V
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.