Datasheet FOD814 Datasheet (Fairchild)

FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

December 2011

Features

■

AC input response (FOD814 only)

■

Applicable to Pb-free IR reflow soldering Compact 4-pin package

■

Current transfer ratio in selected groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160%

FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600%

■

C-UL, UL and VDE approved High input-output isolation voltage of 5000Vrms

■

Minimum BV

■

Higher operating temperatures (versus H11AXXX

of 70V guaranteed

CEO

counterparts)

Applications

FOD814 Series

■

AC line monitor Unknown polarity DC sensor

■

Telephone line interface

■

FOD817 Series

Power supply regulators

■

Digital logic inputs Microprocessor inputs

■

Description

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Functional Block Diagram

1ANODE, CATHODE

2

FOD814 FOD817

4

COLLECTOR

3CATHODE, ANODE

EMITTER

CATHODE

1

2

4

COLLECTORANODE

3 EMITTER

4

1

Absolute Maximum Ratings

(TA = 25°C Unless otherwise speciﬁed.)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Value Units

Symbol Parameter

TOTAL DEVICE

T

STG

T

OPR

T

SOL

T

J

θ

JC

P

TOT

EMITTER

I

F

V

R

P

D

DETECTOR

V

CEO

V

ECO

I

C

P

C

Storage Temperature -55 to +150 °C

Operating Temperature -55 to +105 -55 to +110 °C

Lead Solder Temperature 260 for 10 sec °C

Junction Temperature 125 Max. °C

Junction-to-Case Thermal Resistance 210 °C/W

Total Power Dissipation 200 mW

Continuous Forward Current ±50 50 mA

Reverse Voltage 6

Power Dissipation Derate above 100°C

Collector-Emitter Voltage 70 V

Emitter-Collector Voltage 6 V

Continuous Collector Current 50 mA

Collector Power Dissipation Derate above 90°C

FOD814 FOD817

70

1.7

150

2.9

mW

mW/°C

mW

mW/°C

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

Electrical Characteristics

(TA = 25°C Unless otherwise speciﬁed.)

Individual Component Characteristics

Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit

EMITTER

V

I

C

DETECTOR

I

CEO

BV

CEO

BV

ECO

DC Transfer Characteristics

Symbol

CTR Current Transfer

V

CE (sat)

Forward Voltage FOD814 IF = ±20mA 1.2 1.4 V

F

FOD817 IF = 20mA 1.2 1.4

Reverse Leakage Current FOD817 VR = 4.0V 10 µA

R

Te r minal Capacitance FOD814 V = 0, f = 1kHz 50 250 pF

t

FOD817 V = 0, f = 1kHz 30 250

Collector Dark Current FOD814 VCE = 20V, IF = 0 100 nA

FOD817 VCE = 20V, IF = 0 100

Collector-Emitter Breakdown Voltage

Emitter-Collector Breakdown Voltage

FOD814 IC = 0.1mA, IF = 0 70 V

FOD817 IC = 0.1mA, IF = 0 70

FOD814 IE = 10µA, IF = 0 6 V

FOD817 IE = 10µA, IF = 0 6

DC

Characteristic Device Test Conditions Min. Typ.* Max. Unit

(1)

20 300 %

50 600

Ratio

FOD814 IF = ±1mA, VCE = 5V

FOD814A 50 150

FOD817 IF = 5mA, VCE = 5V

FOD817A 80 160

FOD817B 130 260

FOD817C 200 400

FOD817D 300 600

Collector-Emitter Saturation Voltage

FOD814 IF = ±20mA, IC = 1mA 0.1 0.2 V

FOD817 IF = 20mA, IC = 1mA 0.1 0.2

AC Transfer Characteristics

Symbol AC Characteristic Device Test Conditions Min. Typ.* Max. Unit

f

Cut-Off Frequency FOD814 VCE = 5V, IC = 2mA, RL = 100Ω,

C

-3dB

Response Time (Rise) FOD814,

t

r

VCE = 2 V, IC = 2mA, RL = 100

(2)

Ω

FOD817

t

Response Time (Fall) FOD814,

f

FOD817

*Typical values at TA = 25°C

15 80 kHz

418µs

318µs

Electrical Characteristics

(TA = 25°C Unless otherwise speciﬁed.)

(Continued)

Isolation Characteristics

Symbol Characteristic Device Test Conditions Min. Typ.* Max. Units

V

R

C

*Typical values at TA = 25°C

Notes:

1. Current Transfer Ratio (CTR) = IC/IF x 100%.

2. For test circuit setup and waveforms, refer to page 7.

3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.

Input-Output Isolation

ISO

(3)

Voltage

Isolation Resistance FOD814,

Isolation Capacitance FOD814,

FOD814, FOD817

FOD817

f = 60Hz, t = 1 min, I

≤ 2µA

I-O

V

= 500VDC 5x10

I-O

V

= 0, f = 1 MHz 0.6 1.0 pf

I-O

5000 Vac(rms)

10

1x10

11

Ω

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

Typical Electrical/Optical Characteristics

Fig. 1 Collector Power Dissipation

vs. Ambient Temperature

200

(mW)

C

150

100

50

0

COLLECTOR POWER DISSIPATION P

-55

-40 -20 0 20 40 60 80 100 120

AMBIENT TEMPERATURE T

Fig. 3 Collector-Emitter Saturation Voltage

6

vs. Forward Current

Ic = 0.5 mA

5

4

(sat) (V)

CE

3

1m A 3m A

5m A

7m A

2

VOLTAGE V

1

COLLECTOR-EMITTER SATURATION

0

FORWARD CURRENT IF (mA)

(FOD814)

(°C)

A

Ta = 25 °C

15.012.510.07.55.02.50

(TA = 25°C Unless otherwise speciﬁed.)

Fig. 2 Collector Power Dissipation

vs. Ambient Temperature

200

(mW)

C

150

100

50

0

COLLECTOR POWER DISSIPATION P

-55

-40 -20 0 20 40 60 80 100 120

AMBIENT TEMPERATURE TA (°C)

Fig. 4 Forward Current vs. Forward Voltage

100

(mA)

F

10

TA = 105oC

(FOD814)

o

C

75

o

50

C

1

FORWARD CURRENT I

0.1

0.5 1.0 1.5 2.0

FORWARD VOLTAGE VF (V)

25

o

0

C

-30

-55oC

(FOD817)

o

C

o

C

Fig. 5 Forward Current vs. Forward Voltage

(FOD817)

100

TA = 110oC

(mA)

F

10

1

FORWARD CURRENT I

0.1

0.5 1.0 1.5 2.0

140

120

o

75

C

o

C

50

o

25

C

o

0

C

o

-30

C

-55oC

100

80

60

40

20

CURRENT TRANSFER RATIO CTR ( %)

FORWARD VOLTAGE VF (V)

Fig. 6 Current Transfer Ratio

vs. Forward Current

V =CE5V Ta= 25°C

FOD817

FOD814

0

0.1 0 .2 0.5 1 2 5 10 20 50 100

FORWARD CURRENT IF (mA)

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

Typical Electrical/Optical Characteristics

Fig. 7 Collector Current

vs. Collector-Emitter Voltage (FOD814)

50

I = 30 mA

F

40

(mA)

C

30

20

20 m A

10mA

5mA

10

COLLECTOR CURRENT I

0

0102030405060708090100

COLLECTOR-EMITTER VOLTAGE VCE (V)

Fig. 9 Relative Current Transfer Ratio

160

140

vs. Ambient Temperature

FOD814

IF = 1 mA V

= 5V

CE

120

100

80

FOD817

IF = 5mA

60

RATIO (%)

= 5V

V

CE

40

20

RELATIVE CURRENT TRANSFER

0

-60 -40 -20 0 20 40 60 80 100 120

AMBIENT TEMPERATURE TA (°C)

Ta= 25°C

Pc(M AX.)

1mA

(Continued)

COLLECTOR-EMITTER SATURATION

(TA = 25°C Unless otherwise speciﬁed.)

Fig. 8 Collector Current vs.

Collector-Emitter Voltage (FOD817)

30

I I

= 30mA

F

(mA)

C

25

20mA

20

15

10mA

10

5m A

COLLECTOR CURRENT I

5

0

0102030405060708090

COLLECTOR-EMITTER VOLTAGE VCE (V)

Fig. 10 Collector-Emitter Saturation Voltage

vs. Ambient Temperature

0.12

IF = 20mA

I

= 1mA

C

0.10

0.08

(sat) (V)

CE

0.06

0.04

VOLTAGE V

0.02

0.00

-60 -40 -20 0 20 40 60 80 100 120

AMBIENT TEMPERATURE TA (°C)

Ta = 25°C

Pc(MAX.)

Fig. 11 LED Power Dissipation

vs. Ambient Temperature (FOD814)

100

(mW)

80

LED

(mW)

LED

60

40

20

LED POWER DISSIPATION P

0

-40 -20 0 20 40 60 80 100 120-55

LED POWER DISSIPATION P

AMBIENT TEMPERATURE TA (°C)

Fig. 12 LED Power Dissipation

vs. Ambient Temperature (FOD817)

100

80

60

40

20

0

-40 -20 0 20 40 60 80 100 120-55

AMBIENT TEMPERATURE TA (°C)

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

Typical Electrical/Optical Characteristics

Fig. 13 Response Time

100

50

20

10

5

2

1

RESPONSE TIME (µs)

0.5

0.2

0.1

vs. Load Resistance

V = 2V

CE

Ic = 2 m A Ta = 25 °C

0.1

0.2 0. 5 1 2 5 10

LOAD RESISTANCE RL (kΩ)

tr

td

ts

tf

10000

(nA)

1000

CEO

Fig. 15 Collector Dark Current

vs. Ambient Temperature

VCE = 20V

(Continued)

(dB)

V

-10

VOLTAGE GAIN A

-20

(TA = 25°C Unless otherwise speciﬁed.)

Fig. 14 Frequency Response

V

= 2V

CE

Ic = 2mA

0

R =10k

L

0.2

15 20.5

FREQUENCY f (kHz)

Ta = 25°C

1k

100

100010010

Test Circuit for Response Time

Vc c

R

Input

R

D

L

Output

100

10

1

0.1

0.01

COLLECTOR DARK CURRENT I

-60 -40 -20 0 20 40 60 80 100 120

AMBIENT TEMPERATURE TA (°C)

Input

Output

10%

90%

td

ts

tr tf

Test Circuit for Frequency Response

Vc c

R

D

L

Output

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

Package Dimensions

Through Hole

E N

LA P G IN

T A E S

0.130 (3.30)

0.091 (2.30)

0.150 (3.80)

0.110 (2.80)

0.110 (2.79)

0.090 (2.29)

0.4" Lead Spacing

0.200 (5.10)

0.161 (4.10)

LANE P

NG

I T

EA S

0.200 (5.10)

0.161 (4.10)

0.130 (3.30)

0.091 (2.30)

0.157 (4.00)

0.118 (3.00)

0.020 (0.51) TYP

0.024 (0.60)

0.016 (0.40)

0.157 (4.00)

0.118 (3.00)

Surface Mount

0.312 (7.92)

0.288 (7.32)

0.276 (7.00)

0.236 (6.00)

0.010 (0.26)

0.393 (9.98)

0.300 (7.62)

0.200 (5.10)

E

0.161 (4.10)

N

G PLA

ATIN

SE

0.051 (1.30)

0.043 (1.10)

0.110 (2.79)

0.090 (2.29)

Lead Coplanarity 0.004 (0.10) MAX

0.157 (4.00)

0.118 (3.00)

0.024 (0.60)

0.004 (0.10)

0.312 (7.92)

0.288 (7.32)

0.276 (7.00)

0.236 (6.00)

0.049 (1.25)

0.030 (0.76)

0.412 (10.46)

0.388 (9.86)

0.010 (0.26)

Surface Mount (Footprint Dimensions)

1.5

1.3

0.312 (7.92)

0.288 (7.32)

0.276 (7.00)

0.236 (6.00)

9

0.291 (7.40)

0.252 (6.40)

0.150 (3.80)

0.110 (2.80)

0.024 (0.60)

0.016 (0.40)

0.110 (2.79)

0.090 (2.29)

0.110 (2.80)

0.011 (1.80)

0.42 (10.66)

0.38 (9.66)

0.010 (0.26)

2.54

Note:

All dimensions are in inches (millimeters)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package speciﬁcations do not expand the terms of Fairchild’s worldwide terms and conditions, speciﬁcally the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/

Ordering Information

Option Part Number Example Description

S FOD814S Surface Mount Lead Bend

SD FOD814SD Surface Mount; Tape and reel

300 FOD814300 VDE Approved

300W FOD814300W VDE Approved, 0.4" Lead Spacing

3S FOD8143S VDE Approved, Surface Mount

3SD FOD8143SD VDE Approved, Surface Mount, Tape & Reel

Marking Information

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

4

XVY

3

1

ZZ

814

5

6

2

Deﬁnitions

1Fairchild logo

2Device number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

4 One digit year code

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

Y = Manufactured in Thailand YA = Manufactured in China

Carrier Tape Specifications

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

Ø1.55±0.05

P

2

P

1

A0

P

0

Note:

All dimensions are in millimeters.

Symbol Description Dimensions in mm (inches)

WTape wide 16 ± 0.3 (.63)

P

0

F

P

2

P

1

A0 Compartment 10.45 ± 0.1 (.411)

B0 5.30 ± 0.1 (.209)

K0 4.25 ± 0.1 (.167)

Pitch of sprocket holes 4 ± 0.1 (.15)

Distance of compartment 7.5 ± 0.1 (.295)

2 ± 0.1 (.079)

Distance of compartment to compartment 12 ± 0.1 (.472)

1.75±0.1

F

W

B0

0.3±0.05

K0

Lead Free Recommended IR Reflow Condition

Tp

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

Tsmax

Ramp-down

Tsmin

Temperature (°C)

25°C

ts (Preheat)

Soldering zon

Time (sec)

Proﬁle Feature Pb-Sn solder assembly Lead Free assembly

Preheat condition (Tsmin-Tsmax / ts)

Melt soldering zone 183°C

Peak temperature (Tp) 240 +0/-5°C 260 +0/-5°C

Ramp-down rate 6°C/sec max. 6°C/sec max.

100°C ~ 150°C

60 ~ 120 sec

150°C ~ 200°C

60 ~120 sec

217°C

30 ~ 90 sec

Recommended Wave Soldering condition

Proﬁle Feature For all solder assembly

Peak temperature (Tp) Max 260°C for 10 sec

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers