Datasheet FOD817 Datasheet (Fairchild)

1

2

4

3 EMITTER

COLLECTORANODE

CATHODE

查询FOD817供应商查询FOD817供应商

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817

Series

DESCRIPTION

The FOD817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

FEATURES

• Applicable to Pb-free IR reflow soldering

• Compact 4-pin package

• Current transfer ratio in selected groups:
FOD817: 50-600%
FOD817A: 80-160%
FOD817B: 130-260%
FOD817C: 200-400%
FOD817D: 300-600%

• C-UL, UL and VDE approved

• High input-output isolation voltage of 5000 Vrms

APPLICATIONS

FOD817 Series

•Power supply regulators

• Digital logic inputs

• Microprocessor inputs

4

1

FUNCTIONAL BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Units

TOTAL DEVICE

Storage Temperature T
Operating Temperature T
Lead Solder Temperature T
Total Device Power Dissipation P

EMITTER

Continuous Forward Current I
Reverse Voltage V

LED Power Dissipation
Derate above 25°C

DETECTOR

Collector-Emitter Voltage V
Emitter-Collector Voltage V
Continuous Collector Current I

Detector Power Dissipation
Derate above 25°C

(T

= 25°C Unless otherwise specified.)

A

STG

OPR

SOL

D

F

R

P

D

CEO

ECO

C

P

D

-55 to +125 °C

-30 to +100 °C

260 for 10 sec °C

200 mW

50 mA

6V

70 mW

0.93 mW/°C

70 V

6V

50 mA

150 mW

2.0 mW/°C

© 2004 Fairchild Semiconductor Corporation

Page 1 of 9

8/19/04

Ω

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817

ELECTRICAL CHARACTERISTICS

Series

(T

= 25°C Unless otherwise specified.)

A

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Symbol Min Typ* Max Unit

EMITTER

Input Forward Voltage
Reverse Leakage Current (V
Te r minal Capacitance (V = 0, f = 1 kHz) C

DETECTOR

Collector-Emitter Breakdown Voltage (I
Emitter-Collector Breakdown Voltage (I
Collector-Emitter Dark Current (V

*Typical values at T

= 25°C.

A

TRANSFER CHARACTERISTICS

DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit

Current Transfer Ratio (I

Collector-Emitter
Saturation Voltage

AC Characteristic

Rise Time (I

Fall Time (I

= 5 mA, V

F

= 2 mA, V

C

= 2 mA, V

C

= 20 mA, I

(I

F

= 2 V, R

CE

= 2 V, R

CE

CE

(I

= 20 mA) V

F

= 4.0 V) I

R

= 0.1 mA, I

C

= 10 µA, I

E

= 20 V, I

CE

(T

= 25°C Unless otherwise specified.)

A

= 0) BV

F

= 0) BV

F

= 0) I

F

= 5 V) (note 1) CTR

= 1 mA) V

C

= 100 Ω ) (note 2) t

L

= 100 Ω ) (note 2) t

L

CE (SAT)

r

f

F

R

t

CEO

ECO

CEO

— 1.2 1.4 V

——10µA

–30250 pF

70 — — V

6– –V

—–100 nA

FOD817 50 — 600 %

FOD817A 80 — 160 %

FOD817B 130 — 260 %

FOD817C 200 — 400 %

FOD817D 300 — 600 %

— 0.1 0.2 V

—418µs

—318µs

ISOLATION CHARACTERISTICS

Characteristic Test Conditions Symbol Min Typ* Max Units

Input-Output Isolation Voltage (note 3) f = 60Hz, t = 1 min V

Isolation Resistance (V

Isolation Capacitance (V

*Typical values at T

= 25°C.

A

NOTES

1. Current Transfer Ratio (CTR) = I

/I

C

F

x 100%.

2. For test circuit setup and waveforms, refer to page 4.

3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.

© 2004 Fairchild Semiconductor Corporation

= 500 VDC) R

I-O

= 0, f = 1 MHz) C

I-O

Page 2 of 9

ISO

ISO

ISO

5000 Vac(rms)

5 x 10

10

10

11

0.6 1.0 pf

8/19/04

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817

Series

Typical Electrical/Optical Characteristic Curves

Fig. 1 Forward Current

vs. Ambient Temperature

60

50

(mA)

F

40

30

20

10

FORWARD CURRENT I

0

-30 0 25 50 70 100 125
AMBIENT TEMPERATURE TA (°C)

Fig. 3 Collector-Emitted Saturation Voltage

vs. Forward Current

A

A

A

m
1

051015

FORWARD CURRENT IF (mA)

A

m

m

m

3

5

7

Ta = 25°C

(sat) (V)

VOLTAGE V

COLLECTOR-EMITTER SATURATION

CE

6

5

4

3

2

1

0

Fig. 2 Collector Power Dissipation

200

(mW)

C

150

100

50

0

COLLECTOR POWER DISSIPATION P

-30 0 25 50 70 100 125

Fig. 4 Forward Current vs. Forward Voltage

500

200

(mA)

F

100

50

20

10

5

FORWARD CURRENT I

2

1

0 0.5 1.0 1.5 2.0 2.5 3.0

(T

= 25°C Unless otherwise specified.)

A

vs. Ambient Temperature

AMBIENT TEMPERATURE TA (°C)

Ta =75°C

50°C

FORWARD VOLTAGE VF (V)

25°C

0°C

-25°C

Fig. 5 Current Transfer Ratio

200

180

160

140

120

100

80

60

40

20

CURRENT TRANSFER RATIO CTR ( %)

0

vs. Forward Current

12 51020 50

FORWARD CURRENT IF (mA)

© 2004 Fairchild Semiconductor Corporation

= 5V

V

CE

Ta = 25°C

Page 3 of 9

Fig. 6 Collector Current

vs. Collector-Emitter Voltage

30

= 30mA

I I

F

25

(mA)

C

20

15

10

5

COLLECTOR CURRENT I

0

0123456789

COLLECTOR-EMITTER VOLTAGE VCE (V)

20mA

10mA

5m A

Ta = 25°C

Pc(MAX.)

8/19/04

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817

Series

Typical Electrical/Optical Characteristic Curves

Fig. 7. Relative Current Transfer Ratio

vs. Ambient Temperature

150

100

RATIO (%)

50

RELATIVE CURRENT TRANSFER

0

-30 0 25 50 75 100
AMBIENT TEMPERATURE TA (°C)

I

= 5mA

F

V

CE

= 5V

Fig. 9 Collector Dark Current

vs. Ambient Temperature

-5

10

(A)

CEO

10

10

10

10

-10

10

COLLECTOR DARK CURRENT I

-11

10

= 20V

V

CE

-6

-7

-8

-9

0-25 25 50 75 100

AMBIENT TEMPERATURE TA (°C)

Fig. 8 Collector-Emitter Saturation Voltage

(sat) (V)

CE

VOLTAGE V

COLLECTOR-EMITTER SATURATION

RESPONSE TIME (µs)

(T

= 25°C Unless otherwise specified.)

A

vs. Ambient Temperature

0.16

I

= 20mA

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0

0-25 25 50 75 100

AMBIENT TEMPERATURE TA (°C)

F

I

= 1mA

C

Fig. 10. Response Time

500

200

100

50

20

10

0.5

0.2

vs. Load Resistance

= 2V

V

CE

I

= 2mA

C

Ta = 25°C

tr

tf

5

2

1

0.05 0.1 0.2 0.5 1 2 5 10

LOAD RESISTANCE RL (kΩ)

td

ts

Fig. 11. Frequency Response

0

(dB)

V

10

VOLTA GE GAIN A

20

0.5 1 2 5 10 20 50 100 500

FREQUENCY f (kHz)

© 2004 Fairchild Semiconductor Corporation

RL=10kΩ

= 2V

V

CE

I

= 2mA

C

Ta = 25°C

1kΩ 100Ω

Test Circuit for Response Time

Test Circuit for Frequency Response

Page 4 of 9

8/19/04

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817

Series

Package Dimensions (Through Hole) Package Dimensions (Surface Mount)

0.312 (7.92)

0.288 (7.32)

SEATING PLANE

0.130 (3.30)

0.091 (2.30)

0.150 (3.80)

0.110 (2.80)

0.110 (2.79)

0.090 (2.29)

0.200 (5.10)

0.161 (4.10)

0.157 (4.00)

0.118 (3.00)

0.020 (0.51)
TYP

0.024 (0.60)

0.016 (0.40)

0.276 (7.00)

0.236 (6.00)

0.300 (7.62)
typ

0.010 (0.26)

0.200 (5.10)

0.161 (4.10)

SEATING PLANE

0.051 (1.30)

0.043 (1.10)

0.110 (2.79)

0.090 (2.29)

Lead Coplanarity 0.004 (0.10) MAX

0.157 (4.00)

0.118 (3.00)

0.024 (0.60)

0.004 (0.10)

0.312 (7.92)

0.288 (7.32)

0.276 (7.00)

0.236 (6.00)

0.049 (1.25)

0.030 (0.76)

0.412 (10.46)

0.388 (9.86)

0.010 (0.26)

Package Dimensions (0.4” Lead Spacing)

0.312 (7.92)

0.288 (7.32)

0.276 (7.00)

0.236 (6.00)

0.110 (2.80)

0.011 (1.80)

0.291 (7.40)

0.252 (6.40)

0.010 (0.26)

PLANE
G

SEATIN

0.150 (3.80)

0.110 (2.80)

0.024 (0.60)

0.016 (0.40)

0.200 (5.10)

0.161 (4.10)

0.130 (3.30)

0.091 (2.30)

0.157 (4.00)

0.118 (3.00)

0.110 (2.79)

0.090 (2.29)

NOTE

All dimensions are in inches (millimeters)

Footprint Dimensions (Surface Mount)

1.5

1.3

9

2.54

© 2004 Fairchild Semiconductor Corporation

Page 5 of 9

8/19/04

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817

Series

ORDERING INFORMATION

Option Order Entry Identifier Description

S.S Surface Mount Lead Bend

SD .SD Surface Mount; Tape and reel

W.W 0.4" Lead Spacing

300 .300 VDE 0884

300W .300W VDE 0884, 0.4" Lead Spacing

3S .3S VDE 0884, Surface Mount

3SD .3SD VDE 0884, Surface Mount, Tape & Reel

MARKING INFORMATION

4

5

XVY

ZZ

3

817

1

Definitions

1Fairchild logo

2Device number

VDE mark (Note: Only appears on parts ordered with VDE

3

option – See order entry table)

4 One digit year code

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

6

2

© 2004 Fairchild Semiconductor Corporation

Page 6 of 9

8/19/04

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817

Series

Carrier Tape Specifications

Ø1.55±0.05

NOTE

All dimensions are in millimeters

P

2

P

1

P

0

1.75±0.1

F

W

0.3±0.05

Description Symbol Dimensions in mm (inches)

Tape wide W 16 ± 0.3 (.63)

Pitch of sprocket holes P

Distance of compartment

Distance of compartment to compartment P

0

F

P

2

1

4 ± 0.1 (.15)

7.5 ± 0.1 (.295)
2 ± 0.1 (.079)

12 ± 0.1 (.472)

© 2004 Fairchild Semiconductor Corporation

Page 7 of 9

8/19/04

FOD817 Series

Lead Free recommended IR Reflow condition

Tp

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

Tsmax

Ramp-down

Tsmin

Temperature (°C)

25°C

ts (Preheat)

Soldering zon

Time (sec)

Profile Feature Pb-Sn solder assembly Lead Free assembly

Preheat condition
(Tsmin-Tsmax / ts)

Melt soldering zone

Peak temperature (Tp) 240 +0/-5°C 250 +0/-5°C

Ramp-down rate 6°C/sec max. 6°C/sec max.

100°C ~ 150°C

60 ~ 120 sec

183°C

60 ~ 120 sec

150°C ~ 200°C

60 ~120 sec

217°C

30 ~ 90 sec

Recommended Wave Soldering condition

Profile Feature For all solder assembly

Peak temperature (Tp) Max 260°C for 10 sec

© 2004 Fairchild Semiconductor Corporation

Page 8 of 9

8/19/04

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817 Series

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

© 2004 Fairchild Semiconductor Corporation

Page 9 of 9

8/19/04