Page 1
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
August 2011
FODM8801A, FODM8801B, FODM8801C
OptoHiT™ Series, High Temperature Phototransistor
Optocoupler in Half Pitch Mini-Flat 4-Pin Package
Features
Utilizing patented process technology to achieve high
■
operating temperature up to 125°C
■
Guaranteed Current Transfer Ratio (CTR)
specifications across full temperature range
– Excellent CTR linearity at high temperature
– CTR at very low input current, I
High isolation voltage regulated by safety agency,
■
UL1577, 3750 VAC
DIN EN/IEC60747-5-2 (pending approval)
Compact half pitch, mini-flat, 4-pin package
■
(1.27mm lead pitch, 2.4mm maximum standoff height)
■
> 5mm creepage and clearance distance
Applicable to Infrared Ray reflow, 245°C
■
for 1 min. and
RMS
F
Applications
■
Primarily suited for DC-DC converters
■
For ground loop isolation, signal to noise isolation
Communications – adapters, chargers
■
■
Consumer – appliances, set top boxes
Industrial – power supplies, motor control,
■
programmable logic control
Description
The OptoHiT™ Series, FODM8801, is a first of its kind
phototransistor, utilizing Fairchild’s leading edge
patented process technology to achieving high operating
temperature characteristics, up to 125°C. The optocoupler consists of an aluminum gallium arsenide
(AlGaAs) infrared light emitting diode optically coupled to
a phototransistor, in a compact half pitch, mini-flat, 4-pin
package. It delivers high current transfer ratio at very low
input current. The input-output isolation voltage, Viso, is
rated at 3750 VAC
RMS
.
Schematic Package Drawing
1
CATHODE
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8
2
4
COLLECTORANODE
3
EMITTER
Page 2
° C
Safety and Insulation Ratings for Half-Pitch Mini-Flat Package
Symbol Parameter Min. Typ. Max. Unit
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
Installation Classifications per DIN VDE 0110/1.89
Ta ble 1
For rated main voltage < 150Vrms I-IV
For rated main voltage < 300Vrms I-III
Climatic Classification 40/125/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
V
V
V
V
PR
PR
IORM
IOTM
Input to Output Test Voltage, Method b,
VIORM x 1.875 = V
= 1 sec, Partial Discharge < 5pC
t
m
,100% Production Test with
PR
Input to Output Test Voltage, Method a,
VIORM x 1.5 = V
t
= 60 sec, Partial Discharge < 5pC
m
,Type and Sample Test with
PR
Max Working Insulation Voltage 565 V
Highest Allowable Over Voltage 4000 V
1060 V
848 V
External Creepage 5 mm
External Clearance 5 mm
Insulation thickness 0.5 mm
Safety Limit Values- Maximum Values allowed in the
event of a failure,
T
S
I
S,INPUT
P
S,OUTPUT
R
IO
Case Temperature
Input Current
Output Power
Insulation Resistance at T
,V
=500V
S
IO
150
200
300
10
9
Ω
peak
peak
peak
peak
mA
mW
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 2
Page 3
≤
Ω
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL PACKAGE
T
STG
T
OPR
T
J
T
SOL
EMITTER
I
F(average)
V
R
PD
LED
DETECTOR
I
C(average)
V
CEO
V
ECO
PD
C
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +125 °C
Junction Temperature -40 to +140 °C
Lead Solder Temperature
260 for 10 sec. °C
(Refer to Reflow Temperature Profile on page 11)
Continuous Forward Current 20 mA
Reverse Input Voltage 6 V
Power Dissipation
(1)(3)
40 mW
Continuous Collector Current 30 mA
Collector-Emitter Voltage 75 V
Emitter-Collector Voltage 7 V
Collector Power Dissipation
(2)(3)
150 mW
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol Parameter Value Units
T
A
V
FL(OFF)
I
FH
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
R
C
Notes:
1. Derate linearly from 73˚C at a rate of 0.24mW/˚C
2. Derate linearly from 73˚C at a rate of 2.23mW/˚C.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions
outside these ratings.
4. Device is considered a two terminal device: Pins 1 and 2 are shorted together and Pins 3 and 4 are shorted together.
5. 3,750 VAC
Input-Output Isolation Voltage
ISO
Isolation Resistance
ISO
Isolation Capacitance Freq. = 1MHz 0.3 0.5 pF
ISO
RMS
Operating Temperature -40 to +125 °C
Input Low Voltage -5 to 0.8 V
Input High Forward Current 1 to 10 mA
f = 60Hz, t = 1min., I
V
= 500V
I-O
for 1 minute duration is equivalent to 4,500 VAC
(4)
10µA
I-O
for 1 second duration.
RMS
(4)(5)
3,750 Vac
12
10
RMS
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 3
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∆
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
Electrical Characteristics
Apply over all recommended conditions (T
All typical values are measured at T
= 25°C.
A
= -40°C to +125°C unless otherwise specified).
A
Symbol Parameter Conditions Min. Typ. Max. Units
EMITTER
V
Forward Voltage I
F
V
/ ∆ T
F
I
R
C
T
Forward Voltage Coefficient I
A
Reverse Current V
Te r minal Capacitance V = 0V, f = 1MHz 30 pF
DETECTOR
BV
CEO
Collector-Emitter Breakdown
Voltage
BV
ECO
Emitter-Collector Breakdown
Voltage
I
Collector Dark Current V
CEO
C
Capacitance V
CE
= 1mA 1.0 1.35 1.8 V
F
= 1mA -1.6
F
= 6V 10 µA
R
I
= 0.5mA, I
C
I
= 100µA, I
E
= 75V, I
CE
= 25 ° C
T
A
= 50V, I
V
CE
V
= 5V, I
CE
= 0V, f = 1MHz 8 pF
CE
= 0mA 75 130 V
F
= 0mA 7 12 V
F
= 0mA,
F
= 0mA 50 µA
F
= 0mA 30 µA
F
100 nA
mV / ° C
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 4
Page 5
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
Transfer Characteristics
Apply over all recommended conditions (T
All typical values are measured at T
= 25°C.
A
= -40°C to +125°C unless otherwise specified).
A
Symbol Parameter Device Conditions Min. Typ. Max. Units
CTR
CTR
V
Current Transfer
CE
Ratio
(collector-emitter)
CE(SAT)
Saturated Current
Tr ansfer Ratio
(collector-emitter)
Saturation Voltage FODM8801A IF = 1.0mA, IC = 0.3mA 0.17 0.4 V
CE(SAT)
FODM8801A I
FODM8801B I
FODM8801C I
= 1.0mA, V
F
@ T
= 25°C
A
I
= 1.0mA, V
F
I
= 1.6mA, V
F
I
= 3.0mA, VCE = 5V 45 138 %
F
= 1.0mA, VCE = 5V
F
= 25°C
@ T
A
I
= 1.0mA, VCE = 5V 65 195 360 %
F
I
= 1.6mA, VCE = 5V 70 202 %
F
I
= 3.0mA, VCE = 5V 75 215 %
F
= 1.0mA, VCE = 5V
F
@ T
= 25°C
A
= 1.0mA, VCE = 5V 100 300 560 %
I
F
I
= 1.6mA, VCE = 5V 110 312 %
F
I
= 3.0mA, VCE = 5V 115 330 %
F
= 5V
CE
= 5V 35 120 230 %
CE
= 5V 40 125 %
CE
FODM8801A IF = 1.0mA, VCE = 0.4V
= 25°C
@ T
A
I
= 1.0mA, VCE = 0.4V 30 108 %
F
I
= 1.6mA, VCE = 0.4V 25 104 %
F
I
= 3.0mA, VCE = 0.4V 20 92 %
F
FODM8801B I
FODM8801C I
FODM8801B I
FODM8801C I
= 1.0mA, VCE = 0.4V
F
= 25°C
@ T
A
I
= 1.0mA, VCE = 0.4V 45 168 %
F
I
= 1.6mA, VCE = 0.4V 40 155 %
F
= 3.0mA, VCE = 0.4V 35 132 %
I
F
= 1.0mA, VCE = 0.4V
F
= 25°C
@ T
A
I
= 1.0mA, VCE = 0.4V 75 238 %
F
I
= 1.6mA, VCE = 0.4V 65 215 %
F
I
= 3.0mA, VCE = 0.4V 55 177 %
F
I
= 1.6mA, IC = 0.4mA 0.16 0.4 V
F
I
= 3.0mA, IC = 0.6mA 0.15 0.4 V
F
= 1.0mA, IC = 0.45mA 0.17 0.4 V
F
I
= 1.6mA, IC = 0.6mA 0.16 0.4 V
F
I
= 3.0mA, IC = 1.0mA 0.16 0.4 V
F
= 1.0mA, IC = 0.75mA 0.18 0.4 V
F
I
= 1.6mA, IC = 1.0mA 0.17 0.4 V
F
I
= 3.0mA, IC = 1.6mA 0.17 0.4 V
F
80 120 160 %
130 195 260 %
200 300 400 %
65 108 150 %
90 168 245 %
140 238 380 %
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 5
Page 6
Switching Characteristics
Apply over all recommended conditions (T
All typical values are measured at T
A
Symbol Parameter Device Conditions Min. Typ. Max. Units
= -40°C to +125°C unless otherwise specified).
A
= 25°C.
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
t
t
OFF
ON
Tu rn On Time All Devices IF = 1.6mA, VCC = 5V,
Tu rn Off Time All Devices IF = 1.6mA, VCC = 5V,
tR Output Rise Time
(10% to 90%)
tF Output Fall Time
(90% to 10%)
CMH Common Mode
Rejection Voltage
(Transient Immunity) –
Output High
CM
Common Mode
L
Rejection Voltage
(Transient Immunity) –
Output Low
= 0.75kΩ
R
L
IF = 1.6mA, VCC = 5V,
= 4.7kΩ
R
L
= 0.75kΩ
R
L
IF = 1.6mA, VCC = 5V,
= 4.7kΩ
R
L
All Devices IF = 1.6mA, VCC = 5V,
= 0.75kΩ
R
L
All Devices IF = 1.6mA, VCC = 5V,
= 0.75kΩ
R
L
All Devices T
= 25°C, IF = 0mA,
A
V
> 2.0V, RL = 4.7kΩ,
O
V
CM
= 1000V
(6)
,
Figure 14
All Devices T
= 25°C, IF = 1.6mA,
A
V
< 0.8V, RL = 4.7kΩ,
O
V
CM
= 1000V
(6)
,
Figure 14
1620µs
6µs
1620µs
40 µs
5µs
5.5 µs
20 kV / µs
20 kV / µs
Note:
6. Common mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common
mode impulse signal, Vcm, to assure that the output will remain high.
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 6
Page 7
Typical Performance Curves
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
Fig. 1 Forward Current vs. Forward Voltage
100
10
TA = 125°C
1.0
– FORWARD CURRENT (mA)
F
I
0.1
1.0 1.1
V
= 25°C
TA = -40°C
1.2 1.3 1.4 1.5 1.6 1.7 1.8
– FORWARD VOLTAGE (V)
F
Fig. 3 Current Transfer Ratio vs. Forward Current
1000
VCE = 5V
= 25°C
T
A
Fig. 2 Collector Current vs. Forward Current
100
TA = 25°C
VCE = 5.0V
10
V
= 0.4V
CE
1.0
– COLLECTOR CURRENT (mA)
C
I
0.1
0.1 1 10 100
I
– FORWARD CURRENT (mA)
F
Fig. 4 Normalized CTR vs. Forward Current
10
VCE = 5V
= 25°C
T
= 1mA)
F
) / CTR(I
F
A
NORMALIZED TO I
= 1mA
F
100
1.0
CTR – CURRENT TRANSFER RATIO (%)
CTR (NORMALIZED) = CTR(I
10
0.1 1 10 100
I
– FORWARD CURRENT (mA)
F
0.1
0.1 1 10 100
I
– FORWARD CURRENT (mA)
F
Fig. 5 Normalized CTR vs. Ambient Temperature Fig. 6 Normalized CTR vs. Ambient Temperature
1.2
VCE = 2V
1.0
0.8
0.6
0.4
NORMALIZED CTR @ 25°C
0.2
IF = 2mA
IF = 0.5mA
IF = 1mA
1.2
VCE = 5V
1.0
0.8
0.6
0.4
NORMALIZED CTR @ 25°C
0.2
IF = 2mA
IF = 0.5mA
IF = 1mA
0
-40 -20 0 20 40 60 80 100 120
T
– AMBIENT TEMPERATURE (°C)
A
140 -20 0 20 40 60 80 100 120 140
0
-40
T
– AMBIENT TEMPERATURE (°C)
A
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 7
Page 8
Typical Performance Curves (Continued)
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
Fig. 7 Collector Current vs. Ambient Temperature
100
VCE = 5V
IF = 20mA
I
= 10mA
F
= 5.0mA
I
10
1.0
– COLLECTOR CURRENT (mA)
C
I
0.1
-40 -20 0 20 40 60 80 100
– AMBIENT TEMPERATURE (°C)
T
A
F
= 3.0mA
I
F
= 1.6mA
I
F
I
= 1.0mA
F
I
= 0.5mA
F
120
Fig. 9 Collector Dark Current vs. Ambient Temperature
100000
10000
1000
100
VCE = 24V
VCE = 10V
10
VCE = 75V
VCE = 48V
Fig. 8 Collector Current vs. Collector-Emitter Voltage
40
TA = 25°C
35
30
I
= 15mA
F
25
I
= 20mA
F
20
I
= 10mA
15
10
– COLLECTOR CURRENT (mA)
C
I
5
0
012345
– COLLECTOR-EMITTER VOLTAGE (V)
V
CE
F
IF = 5mA
I
= 1mA
F
Fig. 10 Switching Time vs. Load Resistance
1000
VCE = 5V
= 25°C
T
A
= 1.6mA
I
F
100
10
t
OFF
t
F
t
ON
1
– COLLECTOR DARK CURRENT (nA)
0.1
CEO
I
0.01
-20 0 20 40 60 80 100 120
-40
VCE = 5V
T
– AMBIENT TEMPERATURE (°C)
A
Fig. 11 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
0.35
0.30
0.25
IF = 1.6mA, IC = 1.6mA
0.20
I
= 3.0mA, IC = 1.8mA
F
0.15
– COLLECTOR-EMITTER
0.10
SATURATION VOLTAGE (V)
CE(SAT)
V
0.05
0.00
-40
T
– AMBIENT TEMPERATURE (°C)
A
SWITCHING TIME (µs)
1
0.1
110100
R
– LOAD RESISTANCE (kΩ)
L
Fig. 12. Current Transfer Ration vs.
300
VCE = 5V, IF = 3mA
250
200
150
VCE = 0.4V, IF = 3mA
100
CTR – CURRENT TRANSFER RATIO (%)
50
-40
Ambient Temperature
VCE = 5V, IF = 1mA
VCE = 5V, IF = 1.6mA
VCE = 0.4V, IF = 1mA
VCE = 0.4V, IF = 1.6mA
-20 0 20 40 60 80 100 120-20 0 20 40 60 80 100 120
T
– AMBIENT TEMPERATURE (°C)
A
t
R
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 8
Page 9
Test Circuits
Pulse Generator:
tr = 5ns
Z
PW = 50µs
DC = 1%
O
= 50Ω
Input Pulse
Monitor
I
F
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
+5V
R
= 4.7kΩ
+
I
F
1
2
R
M
4
3
V
GND
L
O
(IF = 1.6mA)
Monitoring Node
V
O
t
R
t
F
90%
5V
Output Pulse
10%
V
OL
t
ON
t
OFF
Figure 13. Test Circuit for Propagation Delay Time, Rise Time and Fall Time
+5V
RL = 4.7kΩ
VO Monitoring Node
GND
1kV
SW
+
I
F
1
2
R
M
4
3
V
CM
Pulse Gen
V
CM
90%
10%
VO (IF = 0mA)
0V
V
2V
OH
0.8V
V
(IF = 1.6mA)
O
V
OL
Figure 14. Test Circuit for Instantaneous Common Mode Rejection Voltage
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 9
Page 10
Package Dimensions
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
Note:
All dimensions are in millimeters.
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor
representative to verify or obtain the most recent revision. Package specifications do not expand the terms of
Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 10
.fairchildsemi.com/packaging/
Page 11
Ordering Information
Part Number Current Transfer Ratio (CTR %) Option, IF = 1mA, VCE = 5V
FODM8801A 80% to 160%
FODM8801B 130% to 260%
FODM8801C 200% to 400%
Packing Method
FODM8801x Tube (100 units per tube)
FODM8801xR2 Tape and Reel (2500 units per reel)
FODM8801xV Tube (100 units per tube), DIN/EN IEC60747-5-2 (pending approval)
FODM8801xR2V Tape and Reel (2500 units per reel), DIN/EN IEC60747-5-2 (pending approval)
All packages are lead free per JEDEC: J-STD-020B standard.
“x” or “xR2” denotes the Current Transfer Ratio option. For example FODM8801AR2 is a phototransistor with
80% to 160% CTR in tape and reel packaging.
Marking Information
1
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
8801x
XV
YY
3
4
5
Definitions
1Fairchild logo
2Device number, ‘x’ denotes CTR% option (A, B or C)
3 VDE mark (Note: Only appears on parts ordered with
DIN/EN IEC60747-5-2 option – See order entry table)
4 One digit year code, e.g., ‘1’ represents the year 2011
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
M
2
6
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 11
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Tape and Reel Dimensions
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
K
t
0
W
1
d
Description
Tape Width
Tape Thickness
Sprocket Hole Pitch
Sprocket Hole Diameter
Sprocket Hole Location
Pocket Location
Pocket Pitch
Pocket Dimension
Pocket Hole Diameter
Cover Tape Width
Cover Tape Thickness
Max. Component Rotation or Tilt
Devices Per Reel
Reel Diameter
P
0
Symbol
W
t
P
0
D
0
E
F
P
2
P
A
0
B
0
K
0
D
1
W
1
d
P
A
0
P
Dimensions (mm)
12.00 +0.30
2
B
0
1.27 Pitch
0.30 ±0.05
4.00 ±0.10
1.50 +0.10
1.75 ±0.10
5.50 ±0.10
2.00 ±0.10
8.00 ±0.10
2.80 ±0.10
7.30 ±0.10
2.30 ±0.10
1.50 Min.
9.20
0.065 ±0.010
10° Max.
2500
330mm (13")
D
0
-0.10
/
-0.0
/
E
W
F
D
1
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 12
Page 13
Reflow Profile
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
260
245
240
220
200
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
T
P
T
L
Ts ma x
180
160
Ts mi n
140
120
100
80
Temperature (°C)
60
40
20
0
120
Time 25°C to Peak
t
s
240 360
Time (seconds)
t
P
t
L
Profile Freature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (t
Ramp-up Rate (t
Liquidous Temperature (T
Time (t
Peak Body Package Temperature 245°C +0°C / –5°C
Time (t
Ramp-down Rate (T
Time 25°C to Peak Temperature 8 minutes max.
) from (Tsmin to Tsmax) 60–120 seconds
S
to tP)3°C/second max.
L
) 217°C
L
) Maintained Above (TL) 60–150 seconds
L
) within 5°C of 260°C 30 seconds
P
to TL)6°C/second max.
P
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 13
Page 14
FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8801X Rev. 1.0.8 14
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