Datasheet FOD617, FOD817 Datasheet (Fairchild)

tm

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

May 2006

FOD814 Series, FOD617 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers

Features

AC input response (FOD814 only)

■

■

Applicable to Pb-free IR reflow soldering
Compact 4-pin package

■

■

Current transfer ratio in selected groups:
FOD617A: 40–80% FOD817: 50–600%
FOD617B: 63–125% FOD817A:80–160%
FOD617C:100–200% FOD817B: 130–260%
FOD617D:160–320% FOD817C:200–400%
FOD814: 20–300% FOD817D:300–600%
FOD814A: 50–150%

C-UL, UL and VDE approved

■

■

High input-output isolation voltage of 5000Vrms
Minimum BV

■

■

Higher operating temperatures (versus H11AXXX

of 70V guaranteed

CEO

counterparts)

Applications

FOD814 Series

AC line monitor

■

■

Unknown polarity DC sensor
Telephone line interface

■

FOD617 and FOD817 Series

Power supply regulators

■

■

Digital logic inputs
Microprocessor inputs

■

Description

The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD617/817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.

Functional Block Diagram

1ANODE, CATHODE

2

FOD814 FOD617/817

©2006 Fairchild Semiconductor Corporation

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

4

COLLECTOR

3CATHODE, ANODE

EMITTER

CATHODE

1

2

1

4

COLLECTORANODE

3 EMITTER

4

1

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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Absolute Maximum Ratings

Symbol Parameter

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

TOT

EMITTER

I

F

V

R

P

D

DETECTOR

V

CEO

V

ECO

I

C

P

C

Storage Temperature -55 to +150 °C

Operating Temperature -55 to +105 -55 to +110 °C

Lead Solder Temperature 260 for 10 sec °C

Total Power Dissipation 200 mW

Continuous Forward Current ±50 50 mA

Reverse Voltage – 6

Power Dissipation
Derate above 100°C

Collector-Emitter Voltage 70 V

Emitter-Collector Voltage 6 6 (FOD817)

Continuous Collector Current 50 mA

Collector Power Dissipation
Derate above 90°C

(T

= 25°C Unless otherwise specified.)

A

FOD814 FOD617/817

Value Units

70

1.7

7 (FOD617)

150

2.9

mW

mW/°C

V

mW

mW/°C

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

2

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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Electrical Characteristics

(T

= 25°C Unless otherwise specified.)

A

Individual Component Characteristics

Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit

EMITTER

V

I

C

DETECTOR

I

CEO

BV

BV

Forward Voltage FOD814 I

F

FOD617 I

FOD817 I

Reverse Leakage Current FOD617 V

R

FOD817 V

Te r minal Capacitance FOD814 V = 0, f = 1kHz – 50 250 pF

t

= ±20mA – 1.2 1.4 V

F

= 60mA – 1.35 1.65

F

= 20mA – 1.2 1.4

F

= 6.0V – 0.001 10 µA

R

= 4.0V – – 10

R

FOD617 V = 0, f = 1kHz – 30 250

FOD817 V = 0, f = 1kHz – 30 250

Collector Dark Current FOD814 V

Collector-Emitter Breakdown

CEO

Voltage

Emitter-Collector Breakdown

ECO

Voltage

FOD617C/D V

FOD617A/B V

FOD817 V

FOD814 I

FOD617 I

FOD817 I

FOD814 I

FOD617 I

FOD817 I

= 20V, I

CE

= 10V, I

CE

= 10V, I

CE

= 20V, I

CE

= 0.1mA, I

C

= 100µA, I

C

= 0.1mA, I

C

= 10µA, I

E

= 10µA, I

E

= 10µA, I

E

= 0 – – 100 nA

F

= 0 – 1 100

F

= 0 – 1 50

F

= 0 – – 100

F

= 0 70 – – V

F

= 0 70 – –

F

= 0 70 – –

F

= 0 6 – – V

F

= 0 7 – –

F

= 0 6 – –

F

Transfer Characteristics (T

= 25°C Unless otherwise specified.)

A

Symbol DC Characteristic Device Test Conditions Min. Typ.* Max. Unit

CTR Current Transfer

Ratio

FOD814 I

= ±1mA, V

F

CE

FOD814A 50 – 150

FOD617A I

= 10mA, V

F

CE

= 5V

= 5V

(1)

(1)

20 – 300 %

40 – 80

FOD617B 63 – 125

FOD617C 100 – 200

FOD617D 160 – 320

FOD617A I

= 1mA, V

F

CE

= 5V

(1)

13 – –

FOD617B 22 – –

FOD617C 34 – –

FOD617D 56 – –

FOD817 I

= 5mA, V

F

CE

= 5V

(1)

50 – 600

FOD817A 80 – 160

FOD817B 130 – 260

FOD817C 200 – 400

FOD817D 300 – 600

V

CE (sat)

*Typical values at T

Collector-Emitter
Saturation Voltage

= 25°C

A

FOD814 I

FOD617 I

FOD817 I

= ±20mA, I

F

= 10mA, I

F

= 20mA, I

F

= 1mA – 0.1 0.2 V

C

= 2.5mA – – 0.4

C

= 1mA – 0.1 0.2

C

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

3

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≤

—

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Transfer Characteristics

(Continued) (T

= 25°C Unless otherwise specified.)

A

Symbol AC Characteristic Device Test Conditions Min. Typ.* Max. Unit

f

Cut-Off Frequency FOD814 V

C

= 5V, I

CE

= 2mA, R

C

= 100 Ω ,

L

15 80 – kHz

-3dB

t

Response Time (Rise) FOD814 V

r

= 2 V, I

CE

= 2mA, R

C

= 100 Ω

L

(2)

–418µs

FOD617

FOD817

Response Time (Fall) FOD814 – 3 18 µs

t

f

FOD617

FOD817

Isolation Characteristics

Symbol Characteristic Device Test Conditions Min. Typ.* Max. Units

V

R

C

Input-Output Isolation

ISO

ISO

ISO

(3)

Voltage

Isolation Resistance FOD814 V

Isolation Capacitance FOD814 V

FOD814 f = 60Hz, t = 1 min,

I

2µA

FOD617

I-O

FOD817

= 500VDC 5x10

I-O

FOD617

FOD817

= 0, f = 1 MHz 0.6 1.0 pf

I-O

FOD617

FOD817

5000 Vac(rms)

10

1x10

11

Ω

*Typical values at T

= 25°C

A

Notes:

1. Current Transfer Ratio (CTR) = I

/I

C

F

x 100%.

2. For test circuit setup and waveforms, refer to page 4.

3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

4

www.fairchildsemi.com

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Typical Electrical/Optical Characteristics (T

Fig. 1 Collector Power Dissipation

vs. Ambient Temperature (FOD814)

200

(mW)

C

150

100

50

0

COLLECTOR POWER DISSIPATION P

-55

-40 -20 0 20 40 60 80 100 120

AMBIENT TEMPERATURE T

Fig. 3 Collector-Emitter Saturation Voltage

6

vs. Forward Current

Ic = 0.5 mA

5

4

(sat) (V)

CE

3

1m A
3m A
5m A

7m A

2

VOLTAGE V

1

COLLECTOR-EMITTER SATURATION

0

FORWARD CURRENT IF (mA)

(°C)

A

Ta = 25 °C

15.012.510.07.55.02.50

= 25°C Unless otherwise specified.)

A

Fig. 2 Collector Power Dissipation

vs. Ambient Temperature (FOD617/817)

200

(mW)

C

150

100

50

0

COLLECTOR POWER DISSIPATION P

-55

-40 -20 0 20 40 60 80 100 120

AMBIENT TEMPERATURE TA (°C)

Fig. 4 Forward Current vs. Forward Voltage

100

(mA)

F

10

TA = 105oC

1

(FOD814)

o

75

C

o

50

C

25

o

0

-30

-55oC

FORWARD CURRENT I

0.1

0.5 1.0 1.5 2.0

FORWARD VOLTAGE VF (V)

o

C

C

o

C

Fig. 5 Forward Current vs. Forward Voltage

(FOD617/817)

TA = 110oC

o

75

C

o

50

C

o

25

C

o

0

C

o

-30

C

-55oC

100

(mA)

F

10

1

FORWARD CURRENT I

0.1

0.5 1.0 1.5 2.0

FORWARD VOLTAGE VF (V)

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

Fig. 6 Current Transfer Ratio

140

120

100

V = 5V
Ta= 25°C

vs. Forward Current

FOD617/817

80

60

40

FOD814

20

CURRENT TRANSFER RATIO CTR ( %)

0

0.1 0 .2 0.5 1 2 5 10 20 50 100

FORWARD CURRENT IF (mA)

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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Typical Electrical/Optical Characteristics (Continued) (T

Fig. 7 Collector Current

vs. Collector-Emitter Voltage (FOD814)

50

I = 30 m A

F

40

(mA)

C

30

20

20 m A

10m A

5m A

10

COLLECTOR CURRENT I

0

0102030405060708090100

COLLECTOR-EMITTER VOLTAGE VCE (V)

Fig. 9 Relative Current Transfer Ratio

160

140

vs. Ambient Temperature

FOD814

IF = 1 mA
V

= 5V

CE

120

100

80

FOD617/817

IF = 5mA

60

RATIO (%)

= 5V

V

CE

40

20

RELATIVE CURRENT TRANSFER

0

-60 -40 -20 0 20 40 60 80 100 120

AMBIENT TEMPERATURE TA (°C)

Ta= 25°C

Pc(M AX.)

1m A

(sat) (V)

CE

VOLTAGE V

COLLECTOR-EMITTER SATURATION

= 25°C Unless otherwise specified.)

A

Fig. 8 Collector Current vs.

Collector-Emitter Voltage (FOD617/817)

30

I I

25

(mA)

C

= 30mA

F

20mA

Ta = 25°C

Pc(MAX.)

20

15

10mA

10

5m A

COLLECTOR CURRENT I

5

0

0102030405060708090

COLLECTOR-EMITTER VOLTAGE VCE (V)

Fig. 10 Collector-Emitter Saturation Voltage

vs. Ambient Temperature

0.12

IF = 20mA

= 1mA

I

C

0.10

0.08

0.06

0.04

0.02

0.00

-60 -40 -20 0 20 40 60 80 100 120

AMBIENT TEMPERATURE TA (°C)

Fig. 11 LED Power Dissipation

vs. Ambient Temperature (FOD814)

100

(mW)

80

LED

60

40

20

LED POWER DISSIPATION P

0

-40 -20 0 20 40 60 80 100 120-55

AMBIENT TEMPERATURE TA (°C)

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

Fig. 12 LED Power Dissipation

vs. Ambient Temperature (FOD617/817)

100

(mW)

80

LED

60

40

20

LED POWER DISSIPATION P

0

-40 -20 0 20 40 60 80 100 120-55

AMBIENT TEMPERATURE TA (°C)

6 www.fairchildsemi.com

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Typical Electrical/Optical Characteristics (Continued) (T

Fig. 13 Response Time

100

50

20

10

5

2

1

RESPONSE TIME (µs)

0.5

0.2

0.1

vs. Load Resistance

V = 2V

CE

Ic = 2m A
Ta = 25°C

0.1

0.2 0.5 1 2 5 10

LOAD RESISTANCE RL (kΩ)

tr

td

tf

ts

10000

(nA)

1000

CEO

0

(dB)

V

-10

VOLTA GE GAIN A

-20

0.2

Fig. 15 Collector Dark Current

vs. Ambient Temperature

VCE = 20V

= 25°C Unless otherwise specified.)

A

Fig. 14 Frequency Response

V

= 2V

CE

Ic = 2mA
Ta = 25°C

R =10k

L

15 20.5

FREQUENCY f (kHz)

1k

100

100010010

Test Circuit for Response Time

Vc c

R

Input

R

D

L

Output

100

10

1

0.1

0.01

COLLECTOR DARK CURRENT I

-60 -40 -20 0 20 40 60 80 100 120

AMBIENT TEMPERATURE TA (°C)

Input

Output

10%

90%

td

ts

tr tf

Test Circuit for Frequency Response

Vc c

R

R

D

L

Output

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

7 www.fairchildsemi.com

Package Dimensions (Through Hole) Package Dimensions (Surface Mount)

0.312 (7.92)

0.288 (7.32)

E

SEATING PLAN

0.150 (3.80)

0.110 (2.80)

0.110 (2.79)

0.090 (2.29)

0.130 (3.30)

0.091 (2.30)

0.200 (5.10)

0.161 (4.10)

0.157 (4.00)

0.118 (3.00)

0.020 (0.51)
TYP

0.024 (0.60)

0.016 (0.40)

0.276 (7.00)

0.236 (6.00)

0.300 (7.62)
typ

0.010 (0.26)

0.200 (5.10)

E

0.161 (4.10)

G PLAN
N

SEATI

0.051 (1.30)

0.043 (1.10)

0.110 (2.79)

0.090 (2.29)

Lead Coplanarity 0.004 (0.10) MAX

0.157 (4.00)

0.118 (3.00)

0.024 (0.60)

0.004 (0.10)

0.312 (7.92)

0.288 (7.32)

0.276 (7.00)

0.236 (6.00)

0.049 (1.25)

0.030 (0.76)

0.412 (10.46)

0.388 (9.86)

Footprint Dimensions

Package Dimensions

(0.4” Lead Spacing)

0.312 (7.92)

0.288 (7.32)

0.276 (7.00)

0.236 (6.00)

0.110 (2.80)

0.011 (1.80)

0.42 (10.66)

0.38 (9.66)

E
N

PLA

ING
T
A

SE

0.150 (3.80)

0.110 (2.80)

0.200 (5.10)

0.161 (4.10)

0.130 (3.30)

0.091 (2.30)

0.024 (0.60)

0.016 (0.40)

0.157 (4.00)

0.118 (3.00)

0.110 (2.79)

0.090 (2.29)

Note:

All dimensions are in inches (millimeters).

0.291 (7.40)

0.252 (6.40)

0.010 (0.26)

(Surface Mount)

1.5

1.3

9

2.54

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

0.010 (0.26)

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

8 www.fairchildsemi.com

Ordering Information

Option Part Number Example Description

S FOD814S Surface Mount Lead Bend

SD FOD814SD Surface Mount; Tape and reel

W FOD814W 0.4" Lead Spacing

300 FOD814300 VDE Approved

300W FOD814300W VDE Approved, 0.4" Lead Spacing

3S FOD8143S VDE Approved, Surface Mount

3SD FOD8143SD VDE Approved, Surface Mount, Tape & Reel

Marking Information

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

4

XVY

3

1

ZZ

814

5

6

2

Definitions

1Fairchild logo

2Device number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

4 One digit year code

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

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Carrier Tape Specifications

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Ø1.55±0.05

P

2

P

1

A0

P

0

Note:

All dimensions are in millimeters.

Description Symbol Dimensions in mm (inches)

Tape wide W 16 ± 0.3 (.63)

Pitch of sprocket holes P

0

Distance of compartment F

P

2

Distance of compartment to compartment P

1

Compartment A0 10.45 ± 0.1 (.411)

B0 5.30 ± 0.1 (.209)

K0 4.25 ± 0.1 (.167)

4 ± 0.1 (.15)

7.5 ± 0.1 (.295)
2 ± 0.1 (.079)

12 ± 0.1 (.472)

1.75±0.1

F

W

B0

0.3±0.05

K0

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

10 www.fairchildsemi.com

Lead Free Recommended IR Reflow Condition

Tp

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Tsmax

Ramp-down

Tsmin

Temperature (°C)

25°C

ts (Preheat)

Soldering zon

Time (sec)

Profile Feature Pb-Sn solder assembly Lead Free assembly

Preheat condition
(Tsmin-Tsmax / ts)

Melt soldering zone 183°C

Peak temperature (Tp) 240 +0/-5°C 260 +0/-5°C

Ramp-down rate 6°C/sec max. 6°C/sec max.

100°C ~ 150°C

60 ~ 120 sec

60 ~ 120 sec

150°C ~ 200°C

60 ~120 sec

217°C

30 ~ 90 sec

Recommended Wave Soldering condition

Profile Feature For all solder assembly

Peak temperature (Tp) Max 260°C for 10 sec

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™

2

CMOS™

E
EnSigna™
FACT™

®

FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™

2

C™

I
i-Lo™
ImpliedDisconnect™

IntelliMAX™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise

®

Programmable Active Droop™

ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC

®

OPTOPLANAR™
PACMAN™
POP™
Power247™

PowerEdge™
PowerSaver™
PowerTrench
QFET

®

®

QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
Stealth™

SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UniFET™

®

UltraFET
VCX™
Wire™

®

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

LIFE SUPPORT POLICY

FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I19

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