Copyright 2010 D&M Holdings Inc. All rights reserved.
WARNING: Violators will be prosecuted to the maximum extent possible.
Ver. 5
●
For purposes of improvement, specifications and design are subject to change without notice.
●
Please use this service manual with referring to the operating instructions without fail.
●
Some illustrations using in this service manual are slightly different from the actual set.
Please refer to the
MODIFICATION NOTICE.
SERVICE MANUAL
MODELJPE3E2EKE2AE1CE1KEUT
DRA-F107
DRA-F107DAB
AM-FM STEREO RECEIVER
3
3
S0089-1V05DM/DG1007
Page 2
Please heed the points listed below during servicing and inspection.
SAFETY PRECAUTIONS
The following check should be performed for the continued protection of the customer and service technician.
LEAKAGE CURRENT CHECK
Before returning the unit to the customer, make sure you make either (1) a leakage current check or (2) a line to chassis
resistance check. If the leakage current exceeds 0.5 milliamps, or if the resistance from chassis to either side of the
power cord is less than 460 kohms, the unit is defective.
CAUTION
CAUTION
◎ Heed the cautions!
Spots requiring particular attention when servicing, such
as the cabinet, parts, chassis, etc., have cautions indicated
on labels or seals. Be sure to heed these cautions and the
cautions indicated in the handling instructions.
◎ Caution concerning electric shock!
(1) An AC voltage is impressed on this set, so touching in-
ternal metal parts when the set is energized could
cause electric shock. Take care to avoid electric shock,
by for example using an isolating transformer and
gloves when servicing while the set is energized, unplugging the power cord when replacing parts, etc.
(2)There are high voltage parts inside. Handle with extra
care when the set is energized.
◎ Caution concerning disassembly and
assembly!
Though great care is taken when manufacturing parts from
sheet metal, there may in some rare cases be burrs on the
edges of parts which could cause injury if fingers are
moved across them. Use gloves to protect your hands.
◎ Only use designated parts!
The set's parts have specific safety properties (fire resistance, voltage resistance, etc.). For replacement parts, be
sure to use parts which have the same properties. In particular, for the important safety parts that are marked z on
wiring diagrams and parts lists, be sure to use the designated parts.
◎ Be sure to mount parts and arrange
the wires as they were originally!
For safety reasons, some parts use tape, tubes or other insulating materials, and some parts are mounted away from
the surface of printed circuit boards. Care is also taken with
the positions of the wires inside and clamps are used to
keep wires away from heating and high voltage parts, so
be sure to set everything back as it was originally.
◎ Inspect for safety after servicing!
Check that all screws, parts and wires removed or disconnected for servicing have been put back in their original positions, inspect that no parts around the area that has been
serviced have been negatively affected, conduct an insulation check on the external metal connectors and between
the blades of the power plug, and otherwise check that
safety is ensured.
(Insulation check procedure)
Unplug the power cord from the power outlet, disconnect
the antenna, plugs, etc., and turn the power switch on. Using a 500V insulation resistance tester, check that the insulation resistance between the terminals of the power
plug and the externally exposed metal parts (antenna terminal, headphones terminal, microphone terminal, input
terminal, etc.) is 1MΩ or greater. If it is less, the set must
be inspected and repaired.
Concerning important safety
parts
Many of the electric and structural parts used in the set
have special safety properties. In most cases these properties are difficult to distinguish by sight, and using replacement parts with higher ratings (rated power and
withstand voltage) does not necessarily guarantee that
safety performance will be preserved. Parts with safety
properties are indicated as shown below on the wiring diagrams and parts lists is this service manual. Be sure to replace them with parts with the designated part number.
(1) Schematic diagrams ... Indicated by the z mark.
(2) Parts lists ... Indicated by the z mark.
Using parts other than the designated
parts could result in electric shock, fires or
other dangerous situations.
DRA-F107 / DRA-F107DAB
2
Page 3
DIMENSION
3
DRA-F107 / DRA-F107DAB
Page 4
WIRE ARRANGEMENT
Front Panel side
Back Panel side
If wire bundles are untied or moved to perform adjustment or parts replacement etc.,be sure to rearrange them neatly as
they were originally bundled or placed afterward.
Otherwise, incorrect arrangement can be a cause of noise generation.
Wire arrangement viewed from the top
4
DRA-F107 / DRA-F107DAB
Page 5
DISASSEMBLY
TOP COVER
FRONT PANEL ASSYAMP PCBREAR PANEL
Refer to "EXPLODED VIEW"Refer to "EXPLODED VIEW"Refer to "EXPLODED VIEW"
FRONT PCBAMP PCBREAR PANEL
(Ref. No. of EXPLODED VIEW : C2) (Ref. No. of EXPLODED VIEW : C7) (Ref. No. of EXPLODED VIEW : M14)
SMPS PCBMAIN PCB
Refer to "EXPLODED VIEW"UPDATE PCBRefer to "EXPLODED VIEW"
SMPS PCBRefer to "EXPLODED VIEW"MAIN PCB
(Ref. No. of EXPLODED VIEW : C3)UPDATE PCB (Ref. No. of EXPLODED VIEW : C8)
(Ref. No. of EXPLODED VIEW : C13)
POWER PCB
Refer to "EXPLODED VIEW"
TUNER PACKPOWER PCB
Refer to "EXPLODED VIEW" (Ref. No. of EXPLODED VIEW : C6)
TUNER PACK
(Ref. No. of EXPLODED VIEW : C12)
PHONO PCB
Refer to "EXPLODED VIEW"
PHONO PCB
(Ref. No. of EXPLODED VIEW : C11)
DAB PCB
Refer to "EXPLODED VIEW"
DAB PCB
(Ref. No. of EXPLODED VIEW : C9
Please refer to "EXPLODED VIEW" for the disassembly method of each PCB.
• Disassemble in order of the arrow of the figure of following flow.
• In the case of the re-assembling, assemble it in order of the reverse of the following flow.
5
DRA-F107 / DRA-F107DAB
Page 6
CAUTION IN SERVICING
Note:・ All user settings will be lost and this factory setting will be recovered when this initialization mode.
So make sure to m+emorize your setting for restoring after the initialization.
Initializing DRA-F107/DRA-F107DAB
DRA-F107/DRA-F107DAB initialization should be performed when the μcom, and peripheral parts of μcom are replaced.
1. Switch off the unit and remove the AC cord from the wall outlet.
2. Hold the following the 0 button and the AUTO PRESET button, and plug the AC cord into the outlet. d
6
DRA-F107 / DRA-F107DAB
Page 7
SPECIAL MODECD TEST MODE
DRAVER
D
DOCK
RAVER
VER+ +++
NoButton nameFunctionDisplay
S1.1
・
Plug AC cord into power outlet while pressing
the ON/STANDBY button and the SDB/
TONE button same time on Main Unit.
・The Version number of MPU is displayed.
・MUTING ON
・
Unplug AC cord to clear this mode.
S1.2
※ When the iPod Dock is connected
・ Plug AC cord into power outlet while pressing
the ON/STANDBY button and the SDB/
TONE button same time on Main Unit.
・The Version number of MPU is displayed.
・MUTING ON
・
Unplug AC cord to clear this mode.
・Plug AC cord into power outlet while pressing
the ON/STANDBY button and the AUTO
PRESET button same time on Main Unit.
・All segment of FLD is turning on and off every
one second .
・MUTING ON.
・Unplug AC cord to clear this mode.
*****:The version number of Main MPU
*****:The version number of MPU
++++:The version number of iPod Dock
・All segment turn on and off.
S1
S1
S2
Versi on No.
Display Mode
Versi on No.
Display Mode
VFD checking
mode
EEPROM
S3
testing Mode
Cold start mode
S4
(Initialization)
・Plug AC cord into power outlet while pressing
the ON/STANDBY button and the TUNER
button same time on Main Unit.
・ON / STANDBY LED lighted ORANGE (The
test is started).
・MUTING ON.
・When power LED lighted Green, this
EEPROM test was OK.
・When power LED lighted RED, this EEPROM
test was NG.
・Unplug AC cord to clear this mode.
・Plug AC cord into power outlet while pressing
the AUTO PRESET button and the
same time on Main Unit.
䊶Mode: CD INPUT=200mVrms,1kHz Speaker=4ohm䊶Mode: CD INPUT=Open䇮Speaker=4ohm
Q1OUTAQ1OUTA
Q3SPEAKE
R
Q3SPEAKE
R
OUT FL+ OUT FL+
Q4SPEAKE
R
Q4SPEAKE
R
OUT FL- OUT FL-
AM/FM TUNER INPUT
䊶Mode:Function CD㸢Tuner FM䊶Mode:Tuner Band FM㸢
A
M
Q5PLL
CEQ5PLL_CE
Q6R/F
DAT
A
Q6R/F_DAT
A
Q7R/F_CL
K
Q7R/F_CL
K
Q8PLL_DIQ8PLL_DI
DAB TUNER INPUTiPod Play
䊶Mode:Tuner Band AM㸢DAB䊶Mode:iPod Connec
t
W1IPOD_TX
Q9DIN
W2IPOD
RX
W0DOUT
_
_
_
19
DRA-F107 / DRA-F107DAB
Page 20
SEMICONDUCTORS
75
76
1
100
51
50
26
25
Only major semiconductors are shown, general semiconductors etc. are omitted to list.
The semiconductor which described a detailed drawing in a schematic diagram are omitted to list.
OStartup ramp requires a charging capacitor of 4.7 nF to AGND in BTL mode.
FREQ_ADJ1214
IPWM frame rate programming pin requires resistor to AGND
GND7,23,24,57,589
PGround
GND_A48, 4938
PPower ground for half-bridge A
GND_B46, 4737
PPower ground for half-bridge B
GND_C34, 3530
PPower ground for half-bridge C
GND_D32, 3329
PPower ground for half-bridge D
GVDD_A55-
PGate drive voltage supply requires 0.1 uF capacitor to GND_A
GVDD_B56-
PGate drive voltage supply requires 0.1 uF capacitor to GND_B
GVDD_C25-
PGate drive voltage supply requires 0.1 uF capacitor to GND_C
GVDD_D26-
PGate drive voltage supply requires 0.1 uF capacitor to GND_D
GVDD_AB-44
PGate drive voltage supply requires 0.22 uF capacitor to GND_A/GND_B
GVDD_CD-23
PGate drive voltage supply requires 0.22 uF capacitor to GND_C/GND_D
INPUT_A46
IInput signal for half bridge A
INPUT_B57
IInput signal for half bridge B
INPUT_C1012
IInput signal for half bridge C
INPUT_D1113
IInput signal for half bridge D
M12020
IMode selection
M22121
IMode selection
M32222
IMode selection
NC59-62-
-No connect, pins may be grounded.
OC_ADJ13
OAnalog over current programming pin requires resistor to ground.
OSC_IO+1315
I/OOscillaotor master/slave output/input.
OSC_IO-1416
I/OOscillaotor master/slave output/input.
/OTW-18
OOvertemperature warning signal, open drain, active low.
/OTW116-
OOvertemperature warning signal, open drain, active low.
/OTW217-
OOvertemperature warning signal, open drain, active low.
OUT_A52, 5339, 40
OOutput, half bridge A
OUT_B44, 4536
OOutput, half bridge B
OUT_C36, 3731
OOutput, half bridge C
OUT_D28, 2927, 28
OOutput, half bridge D
PSU_REF631
PPSU Reference requires close decoupling of 330 pF to AGND
PVDD_A50, 5141, 42
P
Power supply input for half bridges A requires close decoupling of 2.2-uF capacitor
to GND_A
PVDD_B42, 4335
P
Power supply input for half bridges B requires close decoupling of 2.2-uF capacitor
to GND_B
PVDD_C38, 3932
P
Power supply input for half bridges C requires close decoupling of 2.2-uF capacitor
to GND_C
PVDD_D30, 3125, 26
P
Power supply input for half bridges D requires close decoupling of 2.2-uF capacitor
to GND_D
READY1919
ONormal operation; open drain; active high
/RESET24
IDevice reset Input; active low, requires 47kOhm pull up resistor to VREG.
/SD1517
OShutdown signal, open drain, active low
VDD642
P
Power supply for internal voltage regulator requires a 10-uF capacitor in parallel
with a 0.1-uF capacitor to GND for decoupling.
VI_CM68
O
Analog comparator reference node requires close decoupling of
1 nF to AGND
VREG911
PInternal regulator supply filter pin requires 0.1-uF capacitor to AGND
(1) I = input, O = output, P = power
26
DRA-F107 / DRA-F107DAB
Page 27
ICE2QS01 (IC93)
PinSymbolFunction
1ZCZero Crossing
2REGRegulation
3CSPrimary Current Sensing
4, 5HVHigh Voltage input
6OUTgate driver out put
7VCCIC supply voltage
8GNDCommon ground
1
6
7
8
4
3
2
5
GNDZC
REG
CS
VCC
OUT
HV
HV
Blockdigram
GND
8
CS
3
REG
2
OUT
6
ZC
1
controller
V
os
OLP
VCC
OVP
VCC
UVP
output
OVP
current limitation /
foldback correction
V
V
V
V
auto
restart
latch
off
current measurement
V
SWP
V
REF
R
ZCT2
VCCOVP
vccuvp
OPOVP
csSW
v1
power management
Reg
Vcsth
on/off FF
gate driver
PWM generator
Zero-crossing
counter
up/down
counter
HV
4, 5
VCC
7
power cell
V
OLP
active burst
control
ringing
suppression
time control
V
ZCT1
27
DRA-F107 / DRA-F107DAB
Page 28
ICE2QS01 Functional description
Functional Description
3Functional Description
3.1VCC Pre-Charging and Typical
VCC Voltage During Start-up
In the controller ICE2QS01, a power cell is integrated.
As shown in Figure 2, the power cell consists of a high
voltage device and a controller, whereby the high
voltage device is controlled by the controller. The
power cell provides a pre-charging of the VCC
capacitor till VCC voltage reaches the VCC turned-on
threshold V
VCCon
and the IC begins to operate, while it
may keep the VCC voltage at a constant value during
burst mode operation when the output voltage is pulled
down or the power from the auxiliary winding is not
enough, or when the IC is latched off in certain
protection mode.
Once the mains input voltage is applied, a rectified
voltage shows across the capacitor C
bus
. The high
voltage device provides a current to charge the VCC
capacitor C
vcc
. Before the VCC voltage reaches a
certain value, the amplitude of the current through the
high voltage device is only determined by its channel
resistance and can be as high as several mA. After the
VCC voltage is high enough, the controller controls the
high voltage device so that a constant current around
1mA is provided to charge the VCC capacitor further,
until the VCC voltage exceeds the turned-on threshold
V
VCCon
. As shown as the time phase I in Figure 3, the
VCC voltage increase near linearly.
Figure 3VCC voltage at start up
The time taking for the VCC pre-charging can then be
approximately calculated as:
[1]
where I
VCCcharge2
is the charging current from the power
cell which is 1.05mA, typically.
Exceeds the VCC voltage the turned-on threshold
V
VCCon
of at time t1, the power cell is switched off, and
the IC begins to operate with a soft-start. Due to power
consumption of the IC and the fact that still no energy
from the auxiliary winding to charge the VCC capacitor
before the output voltage is built up, the VCC voltage
drops (Phase II). Once the output voltage is high
enough, the VCC capacitor receives then energy from
the auxiliary winding from the time point t
2
on. The VCC
then will reach a constant value depending on output
load.
Since there is a VCC undervoltage protection, the
capacitance of the VCC capacitor should be selected to
be high enough to ensure that enough energy is stored
in the VCC capacitor so that the VCC voltage will never
touch the VCC under voltage protection threshold
V
VCCUVP
before the output voltage is built up. Therefore,
the capacitance should fulfill the following requirement:
[2]
with I
VCCop
the operating current of the controller.
3.2Soft-start
At the time t1, the IC begins to operate with a soft-start.
By this soft-start the switching stresses for the switch,
diode and transformer are minimised. The soft-start
implemented in the ICE2QS01 is a digital time-based
function. The preset soft-start time is 24ms with 8
steps. The internal reference for the regulation voltage
begins at 1.35V and with an increment of 0.35V for
each following step.
3.3Normal Operation
The PWM section of the IC can be divided into two
main portions: PWM controller for normal operation
and PWM controller for burst mode operation. The
PWM controller for normal operation will be described
in the following paragraphs, while the PWM controller
for burst mode operation will be discussed in the next
section.
The PWM controller for normal operation consists of
digital signal processing circuit including an up/down
counter, a zero-crossing counter (ZC-counter) and a
comparator, and analog circuit including a current
measurement unit and a comparator. The switch-on
and -off time point is determined by the digital circuit
and the analog circuit, respectively. As input
information for the switch-on determination, the zerocrossing input signal and the value of the up/down
counter are needed, while the feedback signal v
REG
and the current sensing signal vCS are necessary for
the switch-off determination. Details about the
operation of the PWM controller in normal operation
are illustrated in the following paragraphs.
3.3.1Switch-on Determination
As mentioned above, the digital signal processing
circuit consists of an up/down counter, a zero-crossing
counter and a comparator. A ringing suppression time
V
VCCon
VCC
V
VCCUVP
t1
t
t2
iiiiii
t
1
V
VCConCvcc
I
VCCch e2arg
--------------------------------- -=
C
vcc
I
VCCopt2t1
–
V
VCConVVCCUVP
–
------------------------------------------------t
DRA-F107 / DRA-F107DAB
28
Page 29
Functional Description
controller is implemented to avoid mistriggering by the
ring after MOSFET is turned off. Functionality of these
parts is described as in the following.
3.3.1.1Up/down Counter
The up/down counter stores the number of zero
crossing to be ignored before the main power switch is
switched on after demagnetisation of the transformer.
This value is a function of the regulation voltage, which
contains information about the output power.
Generally, a high output power results in a high
regulation voltage. According to this information, the
value in the up/down counter is changed to a low value
in case of high regulation voltage, and to a high value
in case of low regulation voltage. In ICE2QS01, the
lowest value of the counter is 1 and the highest 7.
Following text explains how the up/down counter value
changes in responding to the regulation voltage v
REG
.
The regulation voltage v
REG
is internally compared with
three thresholds V
RL
, VRH and VRM. According to the
results, the value in the up/down counter is changed,
which is summarised in Table 1 and Figure 4
respectively.
Table 1Operation of the up/down counter
Figure 4Up/down counter operation
According to the comparison results the up/down
counter counts upwards, keeps unchanged or counts
downwards. However, the value in up/down counter is
limited between 1 and 7. If the counter tends to count
beyond this range, the attempt is ignored.
In normal case, the up/down counter can only be
changed by one each time at the clock period of 48ms.
However, to ensure a fast response to sudden load
increase, the counter is set to 1 in the following
switching period after the regulation voltage v
REG
exceeds the threshold VRM.
3.3.1.2Zero-Crossing Counter and Ringing
Suppression Time Controller
In the system, the voltage from the auxiliary winding is
applied to the zero-crossing pin through a RC network,
which provides a time delay to the voltage from the
auxiliary winding. Internally, this pin is connected to a
clamping network, a zero-crossing detector, an output
overvoltage (OP OVP) detector and a ringing
suppression time controller.
During on-state of the power switch a negative voltage
applies to the ZC pin. Through the internal clamping
network, the voltage at the pin is clamped to certain
level. However, it is highly recommended that a fastrecovery diode D
zc
is added to block the negative
voltage when the power switch is on. This is because
the device in MOS technology is sensitive to negative
voltage.
The voltage at the ZC pin v
ZC
is compared with the
threshold V
ZCT1
. Once the voltage vZC crosses the
threshold at its falling edge, a pulse is generated which
is fed to the zero-crossing counter and the counter
value increases by 1.
After MOSFET is turned on, there will be some
oscillation on V
DS
, which will also appear on the voltage
on ZC pin. To avoid the MOSFET is turned on
mistriggerred by such oscillation, a ringing suppression
timer is implemented. The time is dependent on the
voltage v
ZC
. When the voltage v
ZC
is lower than the
threshold V
ZCT2
, a longer preset time applies, while a
shorter time is set when the voltage v
ZC
is higher than
the threshold.
The voltage v
ZC
is used for the output overvoltage
protection, as well. Once the voltage at this pin is
higher than the threshold V
OPOVP
during off-time of the
main switch, the IC is latched off after a fixed blanking
time.
To achieve the switch-on at voltage valley, the voltage
from the auxiliary winding is fed to a time delay network
(the RC network consists of D
zc
, R
zc1
, R
zc2
and Czcas
shown in typical application circuit) before it is applied
to the zero-crossing detector through the ZC pin. The
needed time delay to the main oscillation signal 't
should be approximately one fourth of the oscillation
period (by transformer primary inductor and drainsource capacitor) minus the propagation delay from the
v
REG
up/down counter
action
Always lower than V
RL
Count upwards till
7
Once higher than V
RL
, but
always lower than V
RH
Stop counting, no
value changing
Once higher than V
RH
, but
always lower than V
RM
Count downwards
till 1
Once higher than V
RM
Set up/down
counter to 1
1Case 3
Case 2
Case 1
n
n+1
n+2
n+2
n+2
n+2
n+1nn-1
4 5 6 6 6 6 5 4 311
2 3 4 4 4 4 3 2 1
7 7 7 7 7 7 6 5 4
t
t
V
FB
V
RM
V
RH
V
RL
clockT=48ms
1
29
DRA-F107 / DRA-F107DAB
Page 30
Functional Description
detected zero-crossing to the switch-on of the main
switch t
delay
, theoretically:
[3]
This time delay should be matched by adjusting the
time constant of the RC network which is calculated as:
[4]
3.3.1.3Switch-on Determination
In the system, turn-on of the power switch depends on
the value of the up/down counter, the value of the zerocrossing counter and the voltage at the ZC pin v
ZC
.
Turn-on happens only when the value in the both
counters are the same and the voltage at the ZC is
lower than the threshold V
ZCT1
. For comparison of the
values from both counters, a digital comparator is used.
Once these counters have the same value, the
comparator generates a signal which sets the on/off
flip-flop, only when the voltage v
ZC
is lower than the
threshold V
ZCT1
.
Another signal which may trigger the digital comparator
is the output of a T
sMax
clock signal, which limits the
maximum off time to avoid the low-frequency
operation.
During active burst mode operation, the digital
comparator is disabled and no pulse will be generated.
3.3.2Switch-off Determination
In the converter system, the primary current is sensed
by an external shunt resistor, which is connected
between low-side terminal of the main power switch
and the common ground. The sensed voltage across
the shunt resistor v
CS
is applied to an internal current
measurement unit, and its output voltage v
1
is
compared with the regulation voltage v
reg
. Once the
voltage v
1
exceeds the voltage v
REG
, the output flip-flop
is reset. As a result, the main power switch is switched
off. The relationship between the v
1
and the vcs is
described by:
[5]
To avoid mistriggering caused by the voltage spike
across the shunt resistor after switch-on of the main
power switch, a 330ns leading edge blanking time
applies to output of the comparator.
3.3.3Foldback Point Correction
In addition to the cycle-by-cylce primary current
limitation, the IC incorporats a foldback point
correction. The current limit on CS pin voltage is now a
time dependent one. If the mains input voltage is high,
the MOSFET on time will be short and the current limit
will be low. In such a way, the maximum output power
for the SMPS designed with ICE2QS01 will be nearly
constant against the variations of mains input voltage.
The current sense voltage limit versus the MOSFET
maximum on time is shown in Figure 5.
't
T
osc
4
--------- -t
delay
–=
W
td
C
zc
R
zc1Rzc2
R
zc1Rzc2
+
--------------------------- -=
v
1
3.3 vCS0.7+=
Figure 5 Maximum current limit versus MOSFET maximum on time
0
0.2
0.4
0.6
0.8
1
051015202530
Ton(us)
Vcs-max(V)
DRA-F107 / DRA-F107DAB
30
Page 31
Functional Description
3.4Active Burst Mode Operation
At very low load condition, the IC enters active burst
mode operation to minimize the input power. Details
about active burst mode operation are explained in the
following paragraphs.
3.4.1Entering Active Burst Mode Operation
For determination of entering active burst mode
operation, three conditions apply:
the regulation voltage is lower than the threshold of
V
EB
(1.1V). Accordingly, the peak voltage across the
shunt resistor is 0.11V;
the up/down counter has its maximal value of 7; and
a certain blanking time (24ms).
Once all of these conditions are fulfilled, the active
burst mode flip-flop is set and the controller enters
burst mode operation. This multi-conditional
determination for entering active burst mode operation
prevents mistriggering of entering active burst mode
operation, so that the controller enters active burst
mode operation only when the output power is really
low during the preset blanking time.
3.4.2During Active Burst Mode Operation
After entering the Active Burst Mode the regulation
voltage rises as V
OUT
starts to decrease due to the
inactive PWM section. One comparator observes the
regulation signal if the voltage level V
BH
(3.6V) is
exceeded. In that case the internal circuit is again
activated by the internal bias to start with swtiching.
Turn-on of the power MOSFET is triggered by the
timer. The PWM generator for burst mode operation
composes of a timer with a fixed frequency of 80kHz,
typically, and an analog comparator. Turn-off is
resulted by comparison of the voltage signal v
1
with an
internal threshold, by which the voltage across the
shunt resistor V
csB
is 0.25V, accordingly. A turn-off can
also be triggered by the maximal duty ratio controller
which sets the maximal duty ratio to 50%. In operation,
the output flip-flop will be reset by one of these signals
which come first.
If the output load is still low, the regulation signal
decreases as the PWM section is operating. When
regulation signal reaches the low threshold V
BL
(3.0V),
the internal bias is reset again and the PWM section is
disabled until next time regultaion siganl increases
beyond the V
BH
threshold. If working in active burst
mode the regulation signal is changing like a saw tooth
between 3.0V and 3.6V shown in Figure 6.
3.4.3Leaving Active Burst Mode
The regulation voltage immediately increases if there is
a high load jump. This is observed by one comparator.
As the current limit is 25% during active burst mode a
certain load is needed so that regulation voltage can
exceed V
LB
(4.5V). After leaving active busrt mode,
maximum current can now be provided to stabilize V
O
.
In addition, the up/down counter will be set to 1
immediately after leaving active burst mode. This is
helpful to decrease the output voltage undershoot.
3.4.4IC Power Supply During Active Burst
Mode
During active burst mode operation, the power cell is
activated again. Once the power from the auxiliary
winding is not high enough to keep the VCC voltage
above the preset value of V
VCCBL
, the power cell keeps
the VCC voltage at the preset value V
VCCBL
. Otherwise,
if the VCC voltage is still above this value, no current
flows through the power cell though it is activated.
Figure 6 Signals in active burst mode
1.1V
3.6V
4.4V
V
REG
t
0.25V
1.0V
V
CS
12.5V
V
VCC
t
t
V
O
t
3.0V
Max. Ripple < 1%
Blanking Window (24ms)
Current limit level
during Active Burst
Mode
Leaving
Active Burst
Mode
Entering
Active Burst
Mode
31
DRA-F107 / DRA-F107DAB
Page 32
Functional Description
3.5Protection Functions
The IC provides full protection functions. The following
table summarizes these protection functions.
Table 2Protection features
During operation, the VCC voltage is continuously
monitored. In case of an under- or an over-voltage, the
IC is reset and the main power switch is then kept off.
After the VCC voltage falls below the threshold
V
VCCUVP
, the power cell is activated. The VCC capacitor
is then charged up. Once the voltage exceeds the
threshold V
VCCon
, the IC begins to operate with a new
soft-start.
In case of open control loop or output over load, the
regulation voltage will be pulled up . After a blanking
time of 24ms, the IC enters auto-restart mode. The
blanking time here enables the converter to provide a
high power in case the increase in V
REG
is due to a
sudden load increase. During off-time of the power
switch, the voltage at the zero-crossing pin is
monitored for output over-voltage detection. If the
voltage is higher than the preset threshold v
OPOVP
, the
IC is latched off after the preset blanking time.
If the voltage at the current sensing pin is higher than
the preset threshold v
csSW
during on-time of the power
switch, the IC is latched off. This is short-winding
protection.
During latch-off protection mode, the power cell is
activated and it keeps the VCC voltage at the level of
V
VCCBL.
VCC OvervoltageAuto Restart Mode
VCC UndervoltageAuto Restart Mode
Overload/Open LoopAuto Restart Mode
Output OvervoltageLatched Off Mode
Short WindingLatched Off Mode
32
DRA-F107 / DRA-F107DAB
Page 33
Electrical Characteristics
4Electrical Characteristics
Note:All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other ratings are
not violated.
4.1Absolute Maximum Ratings
Note:Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction
of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 7
(VCC) is discharged before assembling the application circuit.
4.2Operating Range
Note:Within the operating range the IC operates as described in the functional description.
ParameterSymbolLimit ValuesUnitRemarks
min.max.
HV VoltageV
HV
-500V
VCC Supply VoltageV
VCC
-0.327V
REG VoltageV
REG
-0.35.0V
ZC VoltageV
ZC
-0.35.0V
CS VoltageV
CS
-0.35.0V
OUT VoltageV
OUT
-0.327V
Junction TemperatureT
j
-40125qC
Storage TemperatureT
S
-55150qC
Thermal Resistance
Junction-Ambient
R
thJA
-90K/WPG-DIP-8
ESD CapabilityV
ESD
-2kVHuman body model
1)
1)
According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5k: series resistor)
ParameterSymbolLimit ValuesUnitRemarks
min.max.
VCC Supply VoltageV
VCC
V
VCCUVPVVCCOVP
V
Junction TemperatureT
jCon
-25125°C
DRA-F107 / DRA-F107DAB
33
Page 34
Electrical Characteristics
4.3Characteristics
4.3.1Supply Section
Note:The electrical characteristics involve the spread of values guaranteed within the specified supply voltage
and junction temperature range T
J
from – 25 oC to 125oC. Typical values represent the median values,
which are related to 25°C. If not otherwise stated, a supply voltage of V
CC
= 18 V is assumed.
ParameterSymbolLimit ValuesUnitTest Condition
min.typ.max.
Start-Up CurrentI
VCCstart
-300550PAV
VCC
= 21V
VCC Charge CurrentI
VCCcharge1
5.0mAV
VCC
= 0V
I
VCCcharge2
0.551.051.60mAV
VCC
= 1V
I
VCCcharge3
-0.88-mAV
VCC
= 21V
Leakage Current of
Power Cell
I
StartLeak
-0.250PAV
HV
= 610V
at T
j
= 100°C
Supply Current in normal
operation
I
VCCop
-2.53.6mAOutput low
Supply Current in
Auto Restart Mode
with Inactive Gate
I
VCCrestart
-300-PA
Supply Current in
Latch-off Mode
I
VCClatch
-300-PA
Supply Current in Burst Mode
with Inactive Gate
I
VCCburst
-500950PAV
REG
= 2.5V
Supply Voltage with no power
from auxiliary winding in burst
mode or in latch-off mode
V
VCCBL
-12.5-VV
HV
= 100V
VCC Turn-On ThresholdV
VCCon
21.222.022.8V
Internal Reference VoltageV
REF
4.85.05.2Vmeasured at pin REG,
I
REG
= 0
34
DRA-F107 / DRA-F107DAB
Page 35
Electrical Characteristics
4.3.2PWM Section
ParameterSymbolLimit ValuesUnitTest Condition
min.typ.max.
Regulation Pull-Up ResistorR
REG
142333k:
PWM-OP GainA
V
3.183.3--
Offset for Voltage RampV
OS
0.630.7-V
Soft-Start timet
SOFTS
182138ms
Zero crossing threshold voltage V
ZCT1
2050110mV
Ringing suppression thresholdV
ZCT2
0.7V
Minimum ringing suppression
time
t
ZCRST1
2.24.25.5PsV
ZC
> V
ZCT2
Maximum ringing suppression
time
t
ZCRST2
-42-PsV
ZC
< V
ZCT2
Threshold to set Up/Down
Counter to one
V
RM
3.9V
Threshold for downward
counting
V
RH
3.2V
Threshold for upward countingV
RL
2.5V
Counter time
1)
t
COUNT
48ms
Maximum restart time in normal
operation
t
sMax
334260PsV
ZC<VZCT1
Leading Edge Blankingt
LEB
200330460ns
Peak current limitation in normal
operation
V
csth
0.951.01.05V
Regulation voltage for entering
Burst Mode
V
EB
1.1V
Regulation voltage for leaving
Burst Mode
V
LB
4.5V
Regulation voltage for burst-on V
BH
3.6V
Regulation voltage for burst-offV
BL
3.0V
Fixed Switching Frequency in
Burst Mode
f
sB
648096kHz
Max. Duty Cycle in Burst ModeD
maxB
0.5
Peak Current Limitation in Burst
Mode
V
csB
0.220.250.3V
1) The parameter is not subject to production test - verified by design/characterization
35
DRA-F107 / DRA-F107DAB
Page 36
Electrical Characteristics
4.3.3Protection
Note:The trend of all the voltage levels in the Control Unit is the same regarding the deviation except V
VCCOVP
4.3.4Gate Driver
ParameterSymbolLimit ValuesUnitTest Condition
min.typ.max.
VCC overvoltage thresholdV
VCCOVP
2425.026V
VCC undervoltage thresholdV
VCCUVP
10.311.011.7V
Over Load or Open Loop
Detection threshold for OLP
protection at REG pin
V
OLP
4.5V
Over Load or Open Loop
Protection Blanking Time
T
OLP-B
162435ms
Output Overvoltage detection
threshold at the ZC pin
V
OPOVP
4.5V
Threshold for short winding
protection
V
csSW
1.68V
ParameterSymbolLimit ValuesUnitTest Condition
min.typ.max.
Output voltage at logic lowV
GATElow
0.7VI
OUT
= 20mA
Output voltage at logic highV
GATEhigh
10.0VI
OUT
= -20mA
Output voltage active shut down V
GATEasd
1.0V
V
V
VCC
= 7V
I
OUT
= 20mA
Rise Timet
rise
-100-nsC
OUT
= 4.7nF
Fall Timet
fall
-25-nsC
OUT
= 4.7nF
36
DRA-F107 / DRA-F107DAB
Page 37
ICE2B265 (IC92)
Blockdiagram
Thermal Shutdown
T
j
>140°C
Internal Bias
Voltage
Reference
6.5V
4.8V
Leading Edge
Blanking
220ns
Undervoltage
Lockout
Oscillator
Duty Cycle
max
Current-Limit
Comparator
x3.65
Soft-Start
Comparator
Current Limiting
PWM OP
Improved Current Mode
Soft Start
13.5V
8.5V
6.5V
C2
C1
16.5V
4.0V
R
FB
6.5V
Protection Unit
Power-Down
Reset
Power-Up
Reset
Power Management
C
Soft-Start
C
VCC
R
Start-up
85 ... 270 VAC
C
Line
VCC
GND
+
-
Converter
DC Output
V
OUT
f
standby
-f
norm
CoolSET™-F2
Optocoupler
Snubber
Spike
Blanking
5s
PWM
Comparator
R
SQ
Q
Error-Latch
C4
5.3V
C3
4.8V
R
Soft-Start
Gate
Driver
G3
G2
G1
G4
SoftS
5.3V
T1
V
csth
Propagation-Delay
Compensation
R
S
Q
Q
PWM-Latch
0.72
Clock
U
FB
f
osc
f
norm
f
standby
Standby Unit
FB
4.0V
R
Sense
Drain
Isense
0.8V
C5
0.3V
10k
D1
5.6V
CoolMOS™
ICE2Axxxx
ICE2Bxxxx
f
norm
f
standby
100kHz
21.5kHz
67kHz
20kHz
Duty Cycle Max
PinSymbolFunction
1SoftSSoft-Start
2FB Feedback
3IsenseController Current Sense Input,
CoolMOS™ Source Output
4Drain
650V
1)
/800V2)CoolMOS™ Drain
1)
at Tj= 110°C
5Drain
650V
1)
/800V2)CoolMOS™ Drain
2)
at Tj=25°C
6N.CNot connected
7VCCController Supply Voltage
8GNDController Ground
1
6
7
8
4
3
2
5
VCCFB
Is ens e
Dr ain
Sof tS
N. C
GND
Dr ain
37
DRA-F107 / DRA-F107DAB
Page 38
Functional Description
3Functional Description
3.1Power Management
Figure 6Power Management
The Undervoltage Lockout monitors the external
supply voltage V
VCC
. In case the IC is inactive the
current consumption is max. 55μA. When the SMPS is
plugged to the main line the current through R
Start-up
charges the external Capacitor C
VCC
. When V
VCC
exceeds the on-threshold V
CCon
=13.5V the internal bias
circuit and the voltage reference are switched on. After
that the internal bandgap generates a reference
voltage V
REF
=6.5V to supply the internal circuits. To
avoid uncontrolled ringing at switch-on a hysteresis is
implemented which means that switch-off is only after
active mode when Vcc falls below 8.5V.
In case of switch-on a Power Up Reset is done by
resetting the internal error-latch in the protection unit.
When V
VCC
falls below the off-threshold V
CCoff
=8.5V the
internal reference is switched off and the Power Down
reset let T1 discharging the soft-start capacitor C
Soft-Start
at pin SoftS. Thus it is ensured that at every switch-on
the voltage ramp at pin SoftS starts at zero.
3.2Improved Current Mode
Figure 7Current Mode
Current Mode means that the duty cycle is controlled
by the slope of the primary current. This is done by
comparison the FB signal with the amplified current
sense signal.
Figure 8Pulse Width Modulation
In case the amplified current sense signal exceeds the
FB signal the on-time T
on
of the driver is finished by
resetting the PWM-Latch (see Figure 8).
The primary current is sensed by the external series
resistor R
Sense
inserted in the source of the integrated
CoolMOS™. By means of Current Mode regulation, the
Internal
Bias
Voltage
Reference
6.5V
4.8V
Undervoltage
Lockout
13.5V
8.5V
Power-Down
Reset
Power-Up
Reset
Power Management
5.3V
4.0V
T1
PWM-Latch
RSQ
Q
Error-Latch
SoftS
6.5V
Error-Detection
VCC
Main Line (100V-380V)
Primary Winding
Soft-Start Comparator
C
VCC
R
Soft-Start
R
Start-Up
C
Soft-Start
x3.65
PWM OP
Improved
Current Mode
0.8V
PWM Comparator
PWM-Latch
Isense
FB
RSQ
Q
Driver
Soft-Start Comparator
t
FB
Amplified Current Signal
T
on
t
0.8V
Driver
DRA-F107 / DRA-F107DAB
38
Page 39
Functional Description
secondary output voltage is insensitive on line
variations. Line variation changes the current
waveform slope which controls the duty cycle.
The external R
Sense
allows an individual adjustment of
the maximum source current of the integrated
CoolMOS™.
Figure 9Improved Current Mode
To improve the Current Mode during light load
conditions the amplified current ramp of the PWM-OP
is superimposed on a voltage ramp, which is built by
the switch T
2
, the voltage source V1 and the 1st order
low pass filter composed of R
1
and C1(see Figure 9,
Figure 10). Every time the oscillator shuts down for
max. duty cycle limitation the switch T2 is closed by
V
OSC
. When the oscillator triggers the Gate Driver T2 is
opened so that the voltage ramp can start.
In case of light load the amplified current ramp is to
small to ensure a stable regulation. In that case the
Voltage Ramp is a well defined signal for the
comparison with the FB-signal. The duty cycle is then
controlled by the slope of the Voltage Ramp.
By means of the Comparator C5, the Gate Driver is
switched-off until the voltage ramp exceeds 0.3V. It
allows the duty cycle to be reduced continuously till 0%
by decreasing V
FB
below that threshold.
Figure 10 Light Load Conditions
3.2.1PWM-OP
The input of the PWM-OP is applied over the internal
leading edge blanking to the external sense resistor
R
Sense
connected to pin Isense. R
Sense
converts the
source current into a sense voltage. The sense voltage
is amplified with a gain of 3.65 by PWM OP. The output
of the PWM-OP is connected to the voltage source V1.
The voltage ramp with the superimposed amplified
current signal is fed into the positive inputs of the PWMComparator, C5 and the Soft-Start-Comparator.
3.2.2PWM-Comparator
The PWM-Comparator compares the sensed current
signal of the integrated CoolMOS
TM
with the feedback
signal V
FB
(see Figure 11). VFB is created by an
external optocoupler or external transistor in
combination with the internal pull-up resistor R
FB
and
provides the load information of the feedback circuitry.
When the amplified current signal of the integrated
CoolMOS™ exceeds the signal V
FB
the PWM-
Comparator switches off the Gate Driver.
x3.65
PWM OP
0.8V
10k
:
Oscillator
PWM Comparator
20pF
T
2
R
1
C
1
FB
PWM-Latch
V
1
C5
0.3V
Gate Driver
Voltage Ramp
V
OSC
Soft-Start Comparator
t
t
V
OSC
0.8V
FB
t
max .
Dut y Cy cle
0.3V
Gate Driver
Voltage Ramp
39
DRA-F107 / DRA-F107DAB
Page 40
Functional Description
Figure 11 PWM Controlling
3.3Soft-Start
Figure 12 Soft-Start Phase
The Soft-Start is realized by the internal pull-up resistor
R
Soft-Start
and the external Capacitor C
Soft-Start
(see
Figure 5). The Soft-Start voltage V
SoftS
is generated by
charging the external capacitor C
Soft-Start
by the internal
pull-up resistor R
Soft-Start
. The Soft-Start-Comparator
compares the voltage at pin SoftS at the negative input
with the ramp signal of the PWM-OP at the positive
input. When Soft-Start voltage V
SoftS
is less than
Feedback voltage V
FB
the Soft-Start-Comparator limits
the pulse width by resetting the PWM-Latch (see
Figure 12). In addition to Start-Up, Soft-Start is also
activated at each restart attempt during Auto Restart.
By means of the above mentioned C
Soft-Start
the SoftStart can be defined by the user. The Soft-Start is
finished when V
SoftS
exceeds 5.3V. At that time the
Protection Unit is activated by Comparator C4 and
senses the FB by Comparator C3 wether the voltage is
below 4.8V which means that the voltage on the
secondary side of the SMPS is settled. The internal
Zener Diode at SoftS has a clamp voltage of 5.6V to
prevent the internal circuit from saturation (see Figure
13).
Figure 13 Activation of Protection Unit
The Start-Up time T
Start-Up
within the converter output
voltage V
OUT
is settled must be shorter than the Soft-
Start Phase T
Soft-Start
(see Figure 14).
By means of Soft-Start there is an effective
minimization of current and voltage stresses on the
integrated CoolMOS™, the clamp circuit and the output
overshoot and prevents saturation of the transformer
during Start-Up.
x3.65
PWM OP
Improved
Current Mode
PWM Comparator
Isense
Soft-Start Comparator
6.5V
PWM-Latch
0.8V
FB
Optocoupler
R
FB
t
5.3V
V
SoftS
Gate Driver
t
T
Soft-Start
5.6V
6.5V
R
FB
6.5V
Power-Up Reset
C4
5.3V
C3
4.8V
R
Soft-Start
FB
RSQ
Q
Error-Latch
RSQ
Q
PWM-Latch
G2
Clock
Gate
Driver
5.6V
SoftS
C
Soft Start–
T
Soft Start–
R
Soft Start–
1.69u
-------------------------------------=
DRA-F107 / DRA-F107DAB
40
Page 41
Functional Description
Figure 14 Start Up Phase
3.4Oscillator and Frequency
Reduction
3.4.1Oscillator
The oscillator generates a frequency f
switch
= 67kHz/
100kHz. A resistor, a capacitor and a current source
and current sink which determine the frequency are
integrated. The charging and discharging current of the
implemented oscillator capacitor are internally
trimmed, in order to achieve a very accurate switching
frequency. The ratio of controlled charge to discharge
current is adjusted to reach a max. duty cycle limitation
of D
max
=0.72.
3.4.2Frequency Reduction
The frequency of the oscillator is depending on the
voltage at pin FB. The dependence is shown in Figure
15. This feature allows a power supply to operate at
lower frequency at light loads thus lowering the
switching losses while maintaining good cross
regulation performance and low output ripple. In case
of low power the power consumption of the whole
SMPS can now be reduced very effective. The minimal
reachable frequency is limited to 20kHz/21.5 kHz to
avoid audible noise in any case.
Figure 15 Frequency Dependence
3.5Current Limiting
There is a cycle by cycle current limiting realized by the
Current-Limit Comparator to provide an overcurrent
detection. The source current of the integrated
CoolMOS
TM
is sensed via an external sense resistor
R
Sense
. By means of R
Sense
the source current is
transformed to a sense voltage V
Sense
. When the
voltage V
Sense
exceeds the internal threshold voltage
V
csth
the Current-Limit-Comparator immediately turns
off the gate drive. To prevent the Current Limiting from
distortions caused by leading edge spikes a Leading
Edge Blanking is integrated at the Current Sense.
Furthermore a Propagation Delay Compensation is
added to support the immediate shut down of the
CoolMOS™ in case of overcurrent.
3.5.1Leading Edge Blanking
Figure 16 Leading Edge Blanking
Each time when CoolMOS™ is switched on a leading
spike is generated due to the primary-side
capacitances and secondary-side rectifier reverse
recovery time. To avoid a premature termination of the
switching pulse this spike is blanked out with a time
constant of t
LEB
= 220ns. During that time the output of
t
t
V
SoftS
t
5.3V
4.8V
T
Soft-Start
V
OUT
V
FB
V
OUT
T
Start-Up
67kHz
100kHz
20kHz
21.5kHz
21.5
65
100
1.0
1.1 1.2 1.3 1.4 1.5 1. 6 1. 7 1. 8 1.9 2.0
kHz
V
FB
V
f
OSC
ICE2 Bxx x xICE2Axxxx
f
norm
f
standby
t
V
Sense
V
csth
t
LEB
= 220ns
DRA-F107 / DRA-F107DAB
41
Page 42
Functional Description
the Current-Limit Comparator cannot switch off the
gate drive.
3.5.2Propagation Delay Compensation
In case of overcurrent detection by I
Limit
the shut down
of CoolMOS™ is delayed due to the propagation delay
of the circuit. This delay causes an overshoot of the
peak current I
peak
which depends on the ratio of dI/dt of
the peak current (see Figure 17).
.
Figure 17 Current Limiting
The overshoot of Signal2 is bigger than of Signal1 due
to the steeper rising waveform.
A propagation delay compensation is integrated to
bound the overshoot dependent on dI/dt of the rising
primary current. That means the propagation delay
time between exceeding the current sense threshold
V
csth
and the switch off of CoolMOS™ is compensated
over temperature within a range of at least.
Figure 18 Dynamic Voltage Threshold V
csth
The propagation delay compensation is done by
means of a dynamic threshold voltage V
csth
(see Figure
18). In case of a steeper slope the switch off of the
driver is earlier to compensate the delay.
E.g. I
peak
= 0.5A with R
Sense
= 2. Without propagation
delay compensation the current sense threshold is set
to a static voltage level V
csth
=1V. A current ramp of
dI/dt = 0.4A/μs, that means dV
Sense
/dt = 0.8V/μs, and a
propagation delay time of i.e. t
Propagation Delay
=180ns
leads then to a I
peak
overshoot of 14.4%. By means of
propagation delay compensation the overshoot is only
about 2% (see Figure 19).
Figure 19 Overcurrent Shutdown
3.6PWM-Latch
The oscillator clock output applies a set pulse to the
PWM-Latch when initiating CoolMOS™ conduction.
After setting the PWM-Latch can be reset by the PWMOP, the Soft-Start-Comparator, the Current-LimitComparator, Comparator C3 or the Error-Latch of the
Protection Unit. In case of resetting the driver is shut
down immediately.
3.7Driver
The driver-stage drives the gate of the CoolMOS™ and
is optimized to minimize EMI and to provide high circuit
efficiency. This is done by reducing the switch on slope
when reaching the CoolMOS™ threshold. This is
achieved by a slope control of the rising edge at the
driver’s output (see Figure 20) to the CoolMOS™ gate.
Thus the leading switch on spike is minimized. When
CoolMOS™ is switched off, the falling shape of the
driver is slowed down when reaching 2V to prevent an
overshoot below ground. Furthermore the driver circuit
is designed to eliminate cross conduction of the output
stage. At voltages below the undervoltage lockout
threshold V
VCCoff
the gate drive is active low.
t
I
Sense
I
Limit
t
Propagation Del ay
I
Overshoot1
I
peak1
Signal2Signal1
I
Overshoot2
I
peak2
R
Sense
dI
peak
dt
------------u
dV
Sens
e
dt
--------------
-
dd
t
V
csth
V
OSC
Signal1Signal2
V
Sense
max. Duty Cycle
off ti me
t
Propagation Delay
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
00.2 0.4 0. 6 0.811.2 1.4 1.6 1.82
with compensation
without compensation
dt
dV
Sense
V
V/u s
V
Sense
DRA-F107 / DRA-F107DAB
42
Page 43
Functional Description
Figure 20 Internal Gate Rising Slope
3.8Protection Unit (Auto Restart Mode)
An overload, open loop and overvoltage detection is
integrated within the Protection Unit. These three
failure modes are latched by an Error-Latch. Additional
thermal shutdown is latched by the Error-Latch. In case
of those failure modes the Error-Latch is set after a
blanking time of 5μs and the CoolMOS™ is shut down.
That blanking prevents the Error-Latch from distortions
caused by spikes during operation mode.
3.8.1Overload / Open Loop with Normal
Load
Figure 21 shows the Auto Restart Mode in case of
overload or open loop with normal load. The detection
of open loop or overload is provided by the Comparator
C3, C4 and the AND-gate G2 (see Figure 22). The
detection is activated by C4 when the voltage at pin
SoftS exceeds 5.3V. Till this time the IC operates in the
Soft-Start Phase. After this phase the comparator C3
can set the Error-Latch in case of open loop or overload
which leads the feedback voltage V
FB
to exceed the
threshold of 4.8V. After latching VCC decreases till
8.5V and inactivates the IC. At this time the external
Soft-Start capacitor is discharged by the internal
transistor T1 due to Power Down Reset. When the IC
is inactive V
VCC
increases till V
CCon
= 13.5V by charging
the Capacitor C
VCC
by means of the Start-Up Resistor
R
Start-Up
. Then the Error-Latch is reset by Power Up
Reset and the external Soft-Start capacitor C
Soft-Start
is
charged by the internal pull-up resistor R
Soft-Start
. During
the Soft-Start Phase which ends when the voltage at
pin SoftS exceeds 5.3V the detection of overload and
open loop by C3 and G2 is inactive. In this way the Start
Up Phase is not detected as an overload.
Figure 21 Auto Restart Mode
Figure 22 FB-Detection
t
V
Gate
5V
ca. t = 130ns
Overload / Open Loop with Normal Load
FB
t
4.8V
5.3V
Soft S
5μs Blanking
Failure
Det ect i on
Soft-Start Phase
VCC
13.5V
8.5V
t
Dri ve r
t
T
Resta rt
T
Burst 1
t
R
Soft-Start
6.5V
C
Soft-Start
C4
5.3V
C3
4.8V
G2
T1
Error-Latch
Power Up Reset
R
FB
6.5V
FB
SoftS
43
DRA-F107 / DRA-F107DAB
Page 44
Functional Description
But the Soft-Start Phase must be finished within the
Start Up Phase to force the voltage at pin FB below the
failure detection threshold of 4.8V.
3.8.2Overvoltage due to Open Loop with
No Load
Figure 23 Auto Restart Mode
Figure 23 shows the Auto Restart Mode for open loop
and no load condition. In case of this failure mode the
converter output voltage increases and also VCC. An
additional protection by the comparators C1, C2 and
the AND-gate G1 is implemented to consider this
failure mode (see Figure 24).The overvoltage detection
is provided by Comparator C1 only in the first time
during the Soft-Start Phase till the Soft-Start voltage
exceeds the threshold of the Comparator C2 at 4.0V
and the voltage at pin FB is above 4.8V. When VCC
exceeds 16.5V during the overvoltage detection phase
C1 can set the Error-Latch and the Burst Phase during
Auto Restart Mode is finished earlier. In that case
T
Burst2
is shorter than T
Soft-Start
. By means of C2 the
normal operation mode is prevented from overvoltage
detection due to varying of VCC concerning the
regulation of the converter output. When the voltage
V
SoftS
is above 4.0V the overvoltage detection by C1 is
deactivated.
Figure 24 Overvoltage Detection
3.8.3Thermal Shut Down
Thermal Shut Down is latched by the Error-Latch when
junction temperature T
j
of the pwm controller is
exceeding an internal threshold of 140°C. In that case
the IC switches in Auto Restart Mode.
Note:All the values which are mentioned in the
functional description are typical. Please refer
to Electrical Characteristics for min/max limit
values.
Open loop & no load condition
t
Driver
13.5V
16.5V
FB
4.8V
5μs Blanking
Failure
Detection
5.3V
SoftS
4.0V
Overvoltage
Detection Phase
Soft-Start Phase
t
t
T
Restart
T
Burst2
VCC
8.5V
Overvoltage Detection
t
6.5V
C
Soft-Start
VCC
R
Soft-Start
C1
16.5V
C2
4.0V
T1
SoftS
G1
Error Latch
Power Up Reset
DRA-F107 / DRA-F107DAB
44
Page 45
Electrical Characteristics
4Electrical Characteristics
4.1Absolute Maximum Ratings
Note:Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction
of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 6
(VCC) is discharged before assembling the application circuit.
ParameterSymbolLimit ValuesUnitRemarks
min.max.
Drain Source Voltage
ICE2A0565/165/265/365/765I/765P2
ICE2B0565/165/265/365/765I/765P2
ICE2A0565G
ICE2A0565Z
V
DS
-650VTj = 110°C
Drain Source Voltage
ICE2A180Z/280Z/380P2
V
DS
-800VTj = 25°C
Pulsed drain current,
t
p
limited by T
jmax
ICE2A0565/
ICE2B056/
ICE2A0565G/
ICE2A0565Z
I
D_Puls1
2.0A
ICE2A165/
ICE2B165
I
D_Puls2
3.8A
ICE2A265/
ICE2B265
I
D_Puls3
9.8A
ICE2A365/
ICE2B365
I
D_Puls4
23.3A
ICE2A180ZI
D_Puls5
4.1A
ICE2A280ZI
D_Puls6
14.8A
ICE2A765P2/
ICE2B765P2/
ICE2A765I/
ICE2B765I
I
D_Puls7
19.0A
ICE2A380P2/I
D_Puls8
5.7A
45
DRA-F107 / DRA-F107DAB
Page 46
Electrical Characteristics
Avalanche energy,
repetitive t
AR
limited by
max. T
j
=150°C
1)
ICE2A0565E
AR1
-0.01mJ
ICE2A165E
AR2
-0.07mJ
ICE2A265E
AR3
-0.40mJ
ICE2A365E
AR4
-0.50mJ
ICE2B0565E
AR5
-0.01mJ
ICE2B165E
AR6
-0.07mJ
ICE2B265E
AR7
-0.40mJ
ICE2B365E
AR8
-0.50mJ
ICE2A0565GE
AR9
-0.01mJ
ICE2A0565ZE
AR10
-0.01mJ
ICE2A180ZE
AR11
-0.07mJ
ICE2A280ZE
AR12
-0.40mJ
ICE2A765IE
AR13
-0.50mJ
ICE2B765IE
AR14
-0.50mJ
ICE2A765P2E
AR15
-0.50mJ
ICE2B765P2E
AR16
-0.50mJ
ICE2A380P2E
AR17
-0.06mJ
1)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR* f
ParameterSymbolLimit ValuesUnitRemarks
min.max.
46
DRA-F107 / DRA-F107DAB
Page 47
Electrical Characteristics
ParameterSymbolLimit ValuesUnitRemarks
min.max.
Avalanche current,
repetitive tAR limited by
max. T
j
=150°C
ICE2A0565I
AR1
-0.5A
ICE2A165I
AR2
-1A
ICE2A265I
AR3
-2A
ICE2A365I
AR4
-3A
ICE2B0565I
AR5
-0.5A
ICE2B165I
AR6
-1A
ICE2B265I
AR7
-2A
ICE2B365I
AR8
-3A
ICE2A0565G I
AR9
-0.5A
ICE2A0565Z I
AR10
-0.5A
ICE2A180ZI
AR11
-1A
ICE2A280ZI
AR12
-2A
ICE2A765II
AR13
-7A
ICE2B765II
AR14
-7A
ICE2A765P2 I
AR15
-7A
ICE2B765P2 I
AR16
-7A
ICE2A380P2 I
AR17
-2.4A
V
CC
Supply VoltageV
CC
-0.322V
FB VoltageV
FB
-0.36.5V
SoftS VoltageV
SoftS
-0.36.5V
I
Sense
I
Sense
-0.33V
Junction TemperatureT
j
-40150qCController & CoolMOS™
Storage TemperatureT
S
-50150qC
Thermal Resistance
Junction-Ambient
R
thJA1
-90K/WPG-DIP-8-6
R
thJA2
-96K/WPG-DIP-7-1
R
thJA3
-110K/WP-DSO-16/12
ESD Robustness
1)
1)
Equivalent to discharging a 100pF capacitor through a 1.5 k: series resistor
2)
1kV at pin drain of ICE2x0565, ICE2A0565Z and ICE2A0565G
V
ESD
-22)kVHuman Body Model
DRA-F107 / DRA-F107DAB
47
Page 48
Electrical Characteristics
4.2Thermal Impedance (ICE2X765I and ICE2X765P2)
4.3Operating Range
Note:Within the operating range the IC operates as described in the functional description.
ParameterSymbolLimit ValuesUnitRemarks
min.max.
Thermal Resistance
Junction-Ambient
ICE2A765I
ICE2B765I
ICE2A765P2
ICE2B765P2
R
thJA4
-74K/WFree standing with no
heat-sink
ICE2A380P2 R
thJA5
-82K/W
Junction-CaseICE2A765I
ICE2B765I
ICE2A765P2
ICE2B765P2
R
thJC1
-2.5K/W
ICE2A380P2 R
thJC2
-2.86K/W
ParameterSymbolLimit ValuesUnitRemarks
min.max.
V
CC
Supply VoltageV
CC
V
CCoff
21V
Junction Temperature of
Controller
T
JCon
-25130qCLimited due to thermal shut down
of controller
Junction Temperature of
CoolMOS™
T
JCoolMOS
-25150qC
48
DRA-F107 / DRA-F107DAB
Page 49
Electrical Characteristics
4.4Characteristics
Note:The electrical characteristics involve the spread of values given within the specified supply voltage and
junction temperature range T
J
from – 25 qC to 125 qC.Typical values represent the median values, which
are related to 25°C. If not otherwise stated, a supply voltage of V
Activation Limit of Overload &
Open Loop Detection
V
SoftS1
5.155.35.46VVFB > 5V
Deactivation Limit of
Overvoltage Detection
V
SoftS2
3.884.04.12VVFB > 5V
V
CC
> 17.5V
Overvoltage Detection LimitV
VCC1
1616.517.2VV
SoftS
< 3.8V
V
FB
> 5V
Latched Thermal ShutdownT
jSD
130140150°C
1)
1)
The parameter is not subject to production test - verified by design/characterization
Spike Blankingt
Spike
-5-μs
ParameterSymbolLimit ValuesUnitTest Condition
min.typ.max.
Peak Current Limitation
(incl. Propagation Delay Time)
V
csth
0.951.01.05VdV
sense
/ dt = 0.6V/Ps
Leading Edge Blankingt
LEB
-220-ns
51
DRA-F107 / DRA-F107DAB
Page 52
Electrical Characteristics
4.4.6CoolMOS™ Section
ParameterSymbolLimit ValuesUnitTest Condition
min.typ.max.
Drain Source Breakdown Voltage
ICE2A0565/165/265/365/765I/765P2
ICE2B0565/165/265/365/765I/765P2
ICE2A0565G/0565Z
V
(BR)DSS
600
650
-
-
-
-
V
V
Tj=25°C
T
j
=110°C
Drain Source Breakdown Voltage
ICE2A180Z/280Z/380P2
V
(BR)DSS
800
870
-
-
-
-
V
V
Tj=25°C
T
j
=110°C
Drain Source
On-Resistance
ICE2A0565R
DSon1
-
-
4.7
10.0
5.5
12.5
:
:
Tj=25°C
T
j
=125°C
ICE2A165R
DSon2
-
-
3
6.6
3.3
7.3
:
:
Tj=25°C
T
j
=125°C
ICE2A265R
DSon3
-
-
0.9
1.9
1.08
2.28
:
:
Tj=25°C
T
j
=125°C
ICE2A365R
DSon4
-
-
0.45
0.95
0.54
1.14
:
:
Tj=25°C
T
j
=125°C
ICE2B0565R
DSon5
-
-
4.7
10.0
5.5
12.5
:
:
Tj=25°C
T
j
=125°C
ICE2B165R
DSon6
-
-
3
6.6
3.3
7.3
:
:
Tj=25°C
T
j
=125°C
ICE2B265R
DSon7
-
-
0.9
1.9
1.08
2.28
:
:
Tj=25°C
T
j
=125°C
ICE2B365R
DSon8
-
-
0.45
0.95
0.54
1.14
:
:
Tj=25°C
T
j
=125°C
ICE2A0565GR
DSon9
-
-
4.7
10.0
5.5
12.5
:
:
Tj=25°C
T
j
=125°C
ICE2A0565ZR
DSon10
-
-
4.7
10.0
5.5
12.5
:
:
Tj=25°C
T
j
=125°C
ICE2A180ZR
DSon11
-
-
3
6.6
3.3
7.3
:
:
Tj=25°C
T
j
=125°C
ICE2A280ZR
DSon12
-
-
0.8
1.7
1.06
2.04
:
:
Tj=25°C
T
j
=125°C
ICE2A765IR
DSon13
-
-
0.45
0.95
0.54
1.14
:
:
Tj=25°C
T
j
=125°C
ICE2B765IR
DSon14
-
-
0.45
0.95
0.54
1.14
:
:
Tj=25°C
T
j
=125°C
ICE2A765P2R
DSon15
-
-
0.45
0.95
0.54
1.14
:
:
Tj=25°C
T
j
=125°C
ICE2B765P2R
DSon16
-
-
0.45
0.95
0.54
1.14
:
:
Tj=25°C
T
j
=125°C
ICE2A380P2R
DSon17
-
-
1.89
4.15
2.27
4.98
:
:
Tj=25°C
T
j
=125°C
DRA-F107 / DRA-F107DAB
52
Page 53
2. FL DISPLAY
16G 15G 14G 13G 12G 11G 10G 9G8G7G6G5G4G3G2G1G
4
~
N
C
~
N
X
3
N
P
2
N
P
1
F
1
4
0
L
G
N
D
3
9
P
G
N
D
3
7
V
D
D
3
4
-
C
S
3
6
O
S
C
3
5
R
E
S
E
T
3
1
T
S
A
3
0
T
S
B
29151
4
4
3
F
2
4
2
N
P
4
1
N
P
3
2
D
A
3
3
C
P
3
8
V
H
Pin No.
Connection
NOTE 1) F1,F2: Filament
2)NP:Nopin
3) NC: No connection
4) NX: No extend pin
5) DL: Datum Line
6) LGND : Logic GND pin
7) PGND : Power GND pin
8) VH: High Voltage Supply pin
9) VDD: Logic Voltage Supply pin
10) CP: Shift Register Clock
11) DA: Serial Data Input
12) TSA,B : Test pin
13) CS: Chip Select Input pin
14) RESET : Reset Input
15) OSC: Pin for self-oscillation
143
Pin Connection
Grid Assignment
1-1B 2-1B 3-1B 4-1B 5-1B
1
-
2B 2-2B 3-2B 4-2B 5-2B
1
-
3B 2-3B 3-3B 4-3B 5-3B
1
-
4B 2-4B 3-4B 4-4B 5-4B
1
-
5B 2-5B 3-5B 4-5B 5-5B
1
-
6B 2-6B 3-6B 4-6B 5-6B
1
-
7B 2-7B 3-7B 4-7B 5-7B
[ 16G~1G ]
1-1A 2-1A 3-1A 4-1A 5-1A
1
-
2A 2-2A 3-2A 4-2A 5-2A
1
-
3A 2-3A 3-3A 4-3A 5-3A
1
-
4A 2-4A 3-4A 4-4A 5-4A
1
-
5A 2-5A 3-5A 4-5A 5-5A
1
-
6A 2-6A 3-6A 4-6A 5-6A
1
-
7A 2-7A 3-7A 4-7A 5-7A
( Upper display )( Lower display )
16ST85GINK (FL81)
53
DRA-F107 / DRA-F107DAB
Page 54
---MEMO---
54
DRA-F107 / DRA-F107DAB
Page 55
BLOCK DIAGRAM
H/P OUT
SLEEP
SDB TONE TUNED AUTO ST MONO TOTAL RAMDOM1 FLD ALL
MCU
M3062LFGPGP
DATA & CLK
(3.5mm JACK)
M61531
TUNER MODULE
BUF
EUR:65Wx2ch/4 ohm
Analog L/R IN
DVOL
DAB
PORTABLE IN
TONE
MONO OUT
EEPROM
I2C
FLD
AM/FM/RDS
AM
FM
SMPS
+5.6D
+HB(+26.5V)
POWER SUPPLY BLOCK
AC
RELAY
PORTABLE IN
MONO
MUTE
DAB MODULE
DAB
HCT-18MS02TKEY MATRIX
REMOCON
DATA
DATA
ROM/RAM: 256K/20K
RESET
M95040
BUF
BUF
DOCKS COM
DENON BUS
venice 5.1
DATA & CLK
DATA & CLK
S-80128ALMC
PHONO
CD
AUX1
AUX2
TUMER
PHONO
CD
AUX1
AUX2
SWITCH
SP
OPTIMISE
NJM2068
AMP
NJM2068
MUTE
POWER AMP
TAS5630DKD
DC PROTECT
OTW SD
RESET
CONTROL
CONTROL
H/P AMP
CONTROL
JPN:80Wx2ch/4 ohm
REC OUT
(TAPE/MD)
(IPOD)
AMP
* MD IN/OUT: JAPAN VERSION ONLY
(TAPE/MD)
RELAY
SUB
TRANS
+3.3SW
±12VA
±7.5VA
+42V(FL FIL)
+9V_NSW
+3.3V_NSW
CONTROL
55
DRA-F107 / DRA-F107DAB
Page 56
LEVEL DIAGRAM
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䇭
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㪋㪋
㪉㪉
㪂㪉㪇㪂㪉㪇
㪏㪏
㪍㪍
㪋
㪂㪉㪐㪻㪙
㪋
㪉
㪇㪅㪌㪻㪙㪤㪍㪈㪌㪊㪈㩷㪤㪸㫏㩷㫆㫌㫋㫇㫌㫋㩷㪋㪅㪉㪭㫉㫄㫊
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㪂㪈㪇㪂㪈㪇
㪏㪏
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㪍㪍
㪈㪅㪎㪭㫉㫄㫊 㩿㪋㪅㪍㪻㪙㪀
㪋
㩷
㪋
㪉㪉
㪇㪇
㪉
㪈㪭㫉㫄㫊
㪉
㪋
㪈㪏㪅㪍㪻㪙
㪋
㪍
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㪍
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㪏
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㪏
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㪉㪉
㪛㪘㪙㩷㩷㪄㪈㪌㪻㪙
㪋
㪘㪬㪯㩷㪉㪈㪇㫄㪭㪄㪈㪋㪻㪙㪚㪛㪃㪤㪛㪃㪩㪜㪚㪃㪤㪦㪥㪦㩷㪦㪬㪫㪉㪈㪇㫄㪭
㪋
㪫㪬㪥㪜㪩㩷㪊㪇㩼㩷㪤㪦㪛㩷㫀㫅
㪍
㩷㪧㪟㪦㪥㪦㪩㪜㪚㪦㪬㪫㩷㪉㪈㪇㫄㪭
㪍
㫀㪧㪦㪛㩷㪄㪈㪌㪻㪙
㪏㪏
㪄㪉㪇㪄㪉㪇
㪉㪉
㪋㪋
㪧㪟㪦㪥㪦㩷㪤㪘㪯㩷㫀㫅㫇㫌㫋
㪍㪍
㪌㪇㫄㪭
㪏㪏
㪄㪊㪇㪄㪊㪇
㪉㪉
㪋㪋
㪍
㪂㪊㪏㪻㪙
㪍
㪏㪏
㪄㪋㪇㪄㪋㪇
㪉㪉
㪋㪋
㪍㪍
㪏㪏
㪄㪌㪇㪄㪌㪇
㪧㪟㪦㪥㪦㩷㪪㪜㪥㪪㪜
㪉㪉
㪉㪅㪌㫄㪭
㪋㪋
㪍㪍
㪏㪏
㪄㪍㪇㪄㪍㪇
㪩㪠㪘㪘
DRA-F107 / DRA-F107DAB
56
Page 57
PRINTED WIRING BOARDS
COMPONENT SIDE
MAIN PCB ASS'Y (1/2)
57
DRA-F107 / DRA-F107DAB
Page 58
MAIN PCB ASS'Y (2/2)
FOIL SIDE
58
DRA-F107 / DRA-F107DAB
Page 59
FRONT PCB ASS'Y
COMPONENT SIDE
59
DRA-F107 / DRA-F107DAB
Page 60
AMP PCB ASS'Y
COMPONENT SIDE
FOIL SIDE
COMPONENT SIDE
SMPS PCB ASS'Y
60
DRA-F107 / DRA-F107DAB
Page 61
NOTE FOR PARTS LIST
Parts for which "nsp" is indicated on this table cannot be supplied.
When ordering of part, clearly indicate "1" and "I" (i) to avoid mis-supplying.
Ordering part without stating its part number can not be supplied.
Not including General-purpose Carbon Chip Resistor in the P.W.Board parts list. (Refer to the Schematic Diagram for those parts.)
Parts marked with this symbol z have critical characteristics.
Use ONLY replacement parts recommended by the manufacturer.
Not including General-purpose Carbon Film Resistor in the P.W.Board parts list. (Refer to the Schematic Diagram for those parts.)
Part indicated with the mark "★" is not illustrated in the exploded view.
WARNING:
1.
2.
3.
4.
5.
6.
● Resistors
RD : Carbon
RC : Composition
RS : Metal oxide film
RW: winding
RN : Metal film
RK : Metal mixture
P : Pulse-resistant type
NL : Low noise type
NB : Non-burning type
FR : Fuse-resistor
F : Lead wire forming
2B : 1/8 W
2E : 1/4 W
2H : 1/2 W
3A : 1 W
3D : 2 W
3F : 3 W
3H : 5 W
F:±1%
G:±2%
J:±5%
K:±10%
M:±20%
Ex.:RN
Type
14K
Shape
and performance
2E
Power
182
Resistance
G
Allowable
error
FR
Others
* Resistance
1800ohm=1.8kohm18
2
Indicates number of zeros after effective number.
2-digit effective number.
1.2ohm1R 2
2-digit effective number, decimal point indicated by R.
1-digit effective number.
: Units: ohm
● Capacitors
CE : Aluminum foil
electrolytic
CA : Aluminium solid
electrolytic
CS : Tantalum electrolytic
CQ : Film
CK : Ceramic
CC : Ceramic
CP : Oil
CM: Mica
CF : Metallized
CH : Metallized
HS : High stability type
BP : Non-polar type
HR : Ripple-resistant type
DL : For change and discharge
HF : For assuring high requency
U : UL part
C : CSA part
W : UL-CSA part
F : Lead wire forming
0J : 6.3 V
1A : 10 V
1C : 16 V
1E : 25 V
1V : 35 V
1H : 50 V
2A : 100 V
2B : 125 V
2C : 160 V
2D : 200 V
2E : 250 V
2H : 500 V
2J : 630 V
F:±1%
G:±2%
J:±5%
K:±10%
M:±20%
Z:±80%
: - 20%
P : +100%
C:±0.25pF
D:±0.5pF
= : Others
Ex.:CE
Type
04W
Shape
and performance
1H
Dielectric
strength
3R2
CapacityMAllowable
error
BP
Others
・ Units:μF.
2200μF22
2
Indicates number of zeros after effective number.
2-digit effective number.
・ Units:μF.
2.2μF2R
2
2-digit effective number, decimal point indicated by R
1-digit effective number.
* Capacity (electrolyte only)
・ When the dielectric strength is indicated in AC,"AC" is included after the dieelectric strength value.
* Capacity (except electrolyte)
・ Units:pF
2200pF=0.0022μF22
2
Indicates number of zeros after efective number.
(More than 2)
2-digit effective number.
・ Units:pF
220pF22
1
2-digit effective number.
Indicates number of zeros after effective numver.
(0 or 1)
DRA-F107 / DRA-F107DAB
61
Page 62
PARTS LIST OF P.W.B. UNIT
g
* Parts for which "nsp" is indicated on this table cannot be supplied.
* The parts listed below are for maintenance only, might differ from the parts used in the unit in appearances or dimensions.
Note: The symbols in the column "Remarks" indicate the following destinations.
E2 : Europe modelEK : U.K. model
MAIN PCB ASS'Y
Ref. No.Part No.Part NameRemarksQ'ty New
SEMICONDUCTORS GROUP
IC1100D2630609002 OP AMP IC
IC1200D9430007108 OP AMP IC
IC1300D9430059800 HEADPHONE IC
IC2100D2631245009
IC2200D9430005702 REGULATOR IC (-8V)
IC2300D9430005605 REGULATOR IC (+8V)
IC2400D9430007108 OP AMP IC
IC31234010016508S HEX INVERTER IC
IC4100D9430007108 OP AMP IC
IC61943239007750S HEX INVERTER IC
IC62943243010810D I.C U-COM (M3062LFGPGP Renesas)
IC63943249006970S I.C EEPROM (4K,SO8-8P)
IC64943239007760S REGULATOR IC (3.3V, DPAK-5)
IC6500D2622977946 REGULATOR IC (3.3V SMD Type)
IC66943239007240M RESET IC 2.8V (50ms,C-MOS,SOT23-5P)
6H VOLUME IC (10 INPUT, PLASTIC 80P QFP)CVIM61531FPR60G
HVINJM2068DD
HVINJM2068MDTE1
HVINJM4556AL
HVIKA79L08AZT
HVIKA78L08AZT
HVINJM2068MDTE1
HVITC74VHCT04AFT
HVINJM2068MDTE1
HVI74LVC04ADT
CVIANAM1497AT
CVIM95040-WMN6TP
CVIKIA78R033F
BVIBA33BC0FP
CVIS80128ALMCJANT2
*
Q101-10800D9430072502 CHIP TR
Q30100D9430058908 CHIP TR
Q30200D9630121606 CHIP TR
Q371-37300D9630121606 CHIP TR
Q57000D9630121606 CHIP TR
Q571,57200D9430058908 CHIP TR
Q573,57400D2730464901 CHIP TR
Q57500D9430038009 CHIP TR
Q60300D9430038009 CHIP TR
Q60400D9630121606 CHIP TR
Q60500D9430038009 CHIP TR
Q606-60700D9630121606 CHIP TR
Q60800D9430038009 CHIP TR
Q61000D2690184907 CHIP TR
Q61100D9630121606 CHIP TR
Q61300D9430072609 T.R
Q81100D9430038009 CHIP TR
Q81200D9630121606 CHIP TR
Q81300D9430058908 CHIP TR
D10100D2760717903 CHIP DIODE
D201,20200D2760717903 CHIP DIODE
D204,20500D2760717903 CHIP DIODE
D301,30200D2760717903 CHIP DIODE
D303,30490M-HD302150R ZENER DIODE
D30500D2760717903 CHIP DIODE
D351,35200D2760717903 CHIP DIODE
D371-37400D2760717903 CHIP DIODE
D570-57300D2760717903 CHIP DIODE
D601-60400D2760717903 CHIP DIODE
D60700D2760717903 CHIP DIODE
D60900D2760717903 CHIP DIODE
HVTKTC2875B
HVTKTA1504SYRTK
HVTKRC107S
HVTKRC107S
HVTKRC107S
HVTKTA1504SYRTK
HVTKTC3875SYRTK
HVTKRA102S
HVTKRA102S
HVTKRC107S
HVTKRA102S
HVTKRC107S
HVTKRA102S
HVTKRA102S
HVTKRC107S
HVTKTC3199YT
HVTKRA102S
HVTKRC107S
HVTKTA1504SYRTK
HVD1SS355T
HVD1SS355T
HVD1SS355T
HVD1SS355T
HVDMTZJ6.8BT
HVD1SS355T
HVD1SS355T
HVD1SS355T
HVD1SS355T
HVD1SS355T
HVD1SS355T
HVD1SS355T
62
DRA-F107 / DRA-F107DAB
Page 63
Ref. No.Part No.Part NameRemarksQ'ty New
sss
D61000D9430087607 ZENER DIODE
D611-61200D2760717903 CHIP DIODE
RESISTORS GROUP
R551-554RES , CHIP 1/4W
R535-538nspMETAL(OXIDE)FILM RES 5%
R626nspCHIP RES
R610nspCHIP RES
R609nspCHIP RESEK
R624nspCHIP RESE2
R608nspCHIP RES
CAPACITORS GROUP
C101,102nspCERAMIC CAP
C103,104nspELECT CAP
C105,106nspCERAMIC CAP
C107nspCHIP CAP
C108nspELECT CAP
C109,110nspELECT CAP
C111-112nspCAP , METALLIZED FILM (6800pF/100V)
C113-114nspMYLAR CAP
C115,116nspMETALLIZED FILM CAP (100V/0.018UF, J)
C117,118nspMYLAR CAP
C119,120nspELECT CAP
C121nspCHIP CAP
C122nspELECT CAP
C123,124nspCHIP CAP
C131nspELECT CAP
C132nspELECT CAP
C133,134nspCHIP CAP
C135,136nspELECT CAP
C137nspCHIP CAP
C151,152nspELECT CAP
C153,154nspELECT CAP
C155,156nspCERAMIC CAP
C157,158nspCHIP CAP
C159nspELECT CAP
C201-204nspCHIP CAP
C20500D2544692901 ELECT CAP (10uF/63V RFO)
C206,207nspCHIP CAP
C208nspCHIP CAP
C209nspCHIP CAP
C21000D2544692901 ELECT CAP (10uF/63V RFO)
C211,212nspCHIP CAP
C21300D2544694912 ELECT CAP (220uF/25V, RFO)
C214nspCHIP CAP
C215nspCHIP CAP
C216-220nspCHIP CAP
C221,22200D2544694912 ELECT CAP (1000uF/25V, RFO, 12.5X20)
C223-225nspCHIP CAP
C226nspCHIP CAP
C227nspELECT CAP
C228nspCHIP CAP
C229nspCHIP CAP
C230,231nspCHIP CAP
C232-234nspCHIP CAP
HVDMTZJ6.2BT
HVD1SS355T
CRJ14CJ3R3T
KRG1SANJ4R7RT
CRJ10DJ103T
CRJ10DJ103T
CRJ10DJ103T
CRJ10DJ103T
CRJ10DJ103T
CCKT1H101KB
CCEA1HKS100T
CCKT1H101KB
CCUS1H103KC
CCEA1HH220T
CCEA1AKS221T
CCME2A682JXT
HCQI1H682JZT
CCME2A183JXT
HCQI1H392JZT
CCEA1HH100T
CCUS1H103KC
CCEA1HH220T
CCUS1H104KC
CCEA1HH1R0T
CCEA1HH4R7T
CCUS1H103KC
CCEA1HH4R7T
CCUS1H104KC
CCEA1HH100T
CCEA1CH101T
CCKT1H101KB
CCUS1H103KC
CCEA1HH1R0T
CCUS1H104KC
CCEA1JRFO100T
CCUS1H104KC
CCUS1H102KC
CCUS1H104KC
CCEA1JRFO100T
CCUS1H103KC
CCEA1ERFO221T
CCUS1H104KC
CCUS1H102KC
CCUS1H104KC
CCEA1ERFO102E
CCUS1H181JA
CCUS1H103KC
CCEA1CH470T
CCUS1H104KC
CCUS1H181JA
CCUS1H104KC
CCUS1H181JA
*
63
DRA-F107 / DRA-F107DAB
Page 64
Ref. No.Part No.Part NameRemarksQ'ty New
s
s
C235nspCHIP CAP
C236nspCHIP CAP
C23700D2544693939 ELECT CAP(100uF/50V RFO)
C238-240nspCHIP CAP
C24100D2544693900 ELECT CAP (ELNA, RFO, 50V/22UF)
C242nspCHIP CAP
C24300D2544693926 ELECT CAP (47uF/50V RFO)
C244nspCHIP CAP
C24500D2544693900 ELECT CAP (ELNA, RFO, 50V/22UF)
C246-249nspELECT CAP
C250nspMYLAR CAP
C251nspMETALLIZED FILM CAP
C252,253nspMETALLIZED FLIM CAP (100V/0.22UF)
C254nspMETALLIZED FILM CAP
C255nspMYLAR CAP
C256943134006940S ELECT CAP(47uF/50V ROA)
C257nspCHIP CAP
C258943134006940S ELECT CAP(47uF/50V ROA)
C259nspCHIP CAP
C261,262nspCERAMIC CAP (100PF/50V)
C263,264nspCHIP CAP
C265,26600D2544693900 ELECT CAP (ELNA, RFO, 50V/22UF)
IC54943235007710S CLASS-D DIGITAL AMP IC (300W, DKD-44P)
HVINJM2068MDT
CVIKIA78R12F
CVITAS5630DKD
D501-50600D2760717903 CHIP DIODE
D508-51000D2760717903 CHIP DIODE
D515-52200D2760717903 CHIP DIODE
CAPACITORS GROUP
C501,502nspELECT CAP
C503-506nspCHIP CAP
C511nspCHIP CAP
C51200D9430185402 ELECT CAP (ELNA RFO 100uF/25V)
C513nspCHIP CAP
C51500D2544693939 ELEC CAP ELNA RFO SERIES 100uF/50V
C516nspCHIP CAP
C518-52100D2544693900 ELECT CAP (ELNA, RFO, 50V/22UF)
C522nspCHIP CAP
C523nspCHIP CAP (25V/4.7uF, 2125 SIZE)
C524nspCHIP CAP
C525nspCHIP CAP (25V/4.7uF, 2125 SIZE)
C526,527nspCHIP CAP
C528nspCHIP CAP
C52900D2544694912 ElECT CAP (220uF/25V, RFO)
C530nspCHIP CAP
C531nspCHIP CAP
C532943134007870S ELECT CAP (1800uF/35V, ELNA, RJF, 16X25)
C533nspCHIP CAP
C534nspCHIP CAP
C535nspCHIP CAP
C536nspCHIP CAP (50V/4.7uF, 3216 SIZE)
C537nspCHIP CAP
C538nspCHIP CAP
C539nspCHIP CAP (50V/4.7uF, 3216 SIZE)
C540nspCHIP CAP
C541nspCHIP CAP (50V/4.7uF, 3216 SIZE)
C542nspCHIP CAP
C543,544nspCHIP CAP (50V/4.7uF, 3216 SIZE)
C545nspCHIP CAP
C546nspCHIP CAP (50V/4.7uF, 3216 SIZE)
C547nspCHIP CAP
C548nspCHIP CAP
C549nspCHIP CAP
C550nspCHIP CAP
C551943134007870S ELECT CAP (1800uF/35V, ELNA, RJF, 16X25)
C554nspPOLYESTER CAP (100V/0.47uF, Panasonic
ECQV Type)
C556nspPOLYESTER CAP (100V/0.47uF, Panasonic
ECQV Type)
C558-561nspCHIP CAP (2012 SIZE)
C562nspPOLYESTER CAP (100V/0.47uF, Panasonic
ECQV Type)
C564nspPOLYESTER CAP (100V/0.47uF, Panasonic
ECQV Type)
C566-569nspCHIP CAP
HVD1SS355T
HVD1SS355T
HVD1SS355T
CCEA1HH100T
CCUS1H101JA
CCUS1H104KC
CCEA1ERFO101T
CCUS1H104KC
CCEA1HRFO101T
CCUS1H104KC
CCEA1HRFO220T
CCUS1H331JA
CCUC1E475KC
CCUS1H472KC
CCUC1E475KC
CCUS1H104KC
CCUS1H102KC
CCEA1ERFO221T
CCUS1H102KC
CCUS1H104KC
CCEA1VRJF182E
CCUS1H102KC
CCUS1H103KC
CCUS1H104KC
CCUP1H475KC
CCUS1H102KC
CCUS1H333KC
CCUP1H475KC
CCUS1H333KC
CCUP1H475KC
CCUS1H333KC
CCUP1H475KC
CCUS1H333KC
CCUP1H475KC
CCUS1H102KC
CCUS1H104KC
CCUS1H103KC
CCUS1H102KC
CCEA1VRJF182E
CCME2A474JO14
CCME2A474JO14
CCUC2A103KC
CCME2A474JO14
CCME2A474JO14
CCUS1H102KC
*
*
*
*
*
*
71
DRA-F107 / DRA-F107DAB
Page 73
Ref. No.Part No.Part NameRemarksQ'ty New
C580nspCHIP CAP
C58100D2544693900 ELECT CAP (ELNA, RFO, 50V/22UF)
C58400D2544694912 ElECT CAP (220uF/25V, RFO)
C583nspCHIP CAP
C585nspCHIP CAP
C58600D2544694912 ElECT CAP (220uF/25V, RFO)
C587nspCHIP CAP
C588nspCHIP CAP
C589nspCHIP CAP
C590,591943134006960S ELECT CAP (1000uF/50V, ELNA, RFO)*
C595nspCHIP CAP
C596nspCHIP CAP
C631-634nspCHIP CAP (330pF/100V,2012 SIZE)
C635nspCHIP CAP
C651-655nspCAP CAP 0.1UF/50V/2012
OTHERS PARTS GROUP
BD51nspCHIP FERRITE BEAD(220ohm, 2012)
BD52-57nspCHIP FERRITE BEAD(60ohm, 4516)
BD59nspCHIP FERRITE BEAD(60ohm, 4516)
BD60nspCHIP FERRITE BEAD(60ohm, 4516)
CCUS1H104KC
CCEA1HRFO220T
CCEA1ERFO221T
CCUS1H101JA
CCUS1H101JA
CCEA1ERFO221T
CCUS1H102KC
CCUS1H103KC
CCUS1H104KC
CCUS1H104KC
CCUS1H102KC
CCUC2A331JA
CCUS1H104KC
CCUC1H104KC
CLZ9R006Z
CLZ9Z014Z
CLZ9Z014Z
CLZ9Z014Z
*
*
*
CN91nspLOCKING TYPE , STRAIGHT WAFER, 2.5MM
L501-50400MLC11034420 POWER INDUCTOR COIL
WP51nspPIN HEADER(6P, 2.54mm)
WP52nspPIN HEADER(12PIN, 2.54mm, ANGLE)
CJP07GI237ZW
CLZ9Z111Z
CJP06GB142ZB
CJP12GB142ZB
72
DRA-F107 / DRA-F107DAB
Page 74
WIRING DIAGRAM
5
1
21
1
7
1
7
1
1
7
1
5
5
1
7
1
5
1
2
1
1
21
7
1
7
1
15
1
FRONT B'D
AC100V~230V
SMPS B'D
DENON
PORTABLE INPHONES
ON/ STANDBY
WN21
BN83
SOURCE
TUNER---- PRESET / TUNING----
AUTO PRESET
SDB/TONE
VOLUME
DRA-F107
AM-FM STEREO RESEIVER
WF81
BN91
CN92
CN93
CN96
CN91
BN96
CN93
WC52
WC51WP51
WP52
WN81
BN61
1
13
WP11
WC11
CN82
1
13
TUNER MODULE
DAB B'D
WP82
WC82
WN31
1
2
CN90
BN82
CONNECT WITH
DAB BOARD
PHONO B'D
CONNECT WITH
PHONO BOARD
MAIN B'D
AMP B'D
CONNECT WITH
AMP BOARD
CONNECT WITH
AMP BOARD
POWER B'D
AC IN
AC OUTLET
73
DRA-F107 / DRA-F107DAB
Page 75
EXPLODED VIEW
z
Parts marked with this symbol have critical
characteristics.
Use ONLY replacement parts recommended by
the manufacturer.
WARNING:
74
DRA-F107 / DRA-F107DAB
Page 76
PARTS LIST OF EXPLODED VIEW
s
s
* Parts for which "nsp" is indicated on this table cannot be supplied.
P.W.B. ASS'Y for which "nsp" is indicated on this table cannot be supplied. When repairing the P.W.B. ASS'Y, check the board parts table and order replacement parts.
*
* The parts listed below are for maintenance only, might differ from the parts used in th e unit in appearances or dimensions.
Note: The symbols in the column "Remarks" indicate the following destinations.
E2 : Europe modelEK : U.K. model
BK : Black modelSP : Premium Silver model
* Parts for which "nsp" is indicated on this table cannot be supplied.
* The parts listed below are for maintenance only, might differ from the parts used in the unit in appearances or dimensions.
Note: The symbols in the column "Remarks" indicate the following destinations.
E2 : Europe modelEK : U.K. model
BK : Black modelSP : Premium Silver model
Ref. No.Part No.Part NameRemarksQ'ty New
201nspPOLY BAG
202 943541007970D INST MANUAL(E2/EK)
203nspS.S.LIST(EX)
204nspBATTERY (SIZE 'AAA')
205 943307007900D REMOCON(RC1127)
206 00D9430113500 ANT.AM LOOP
207 00D9430113403 FM 1 POLE ANT.
208 943429007990S ANT.DAB TEK
209 943611000190S CORD POWER E2E2
209 943611000210S CORD POWER EKEK
210 943535007470D POLY BAG
211 943533007480D SNOW PAD
212 943533007490D SNOW PAD
213 943531008000D OUT CARTON BOXE2
213 943531008010D OUT CARTON BOXEK
214nspPOS LABELSPE2
214nspPOS LABELBKE2
214nspPOS LABELSPEK
214nspPOS LABELBKEK
215nspCONTROL LABELSPE2
215nspCONTROL LABELBKE2
215nspCONTROL LABELSPEK
215nspCONTROL LABELBKEK
216nspCOLOR LABELSP
CPB1A190Z
CQX1A1464Z
-
-
CARTDRAF107BK
CSA1A020Z
CSA1A018Z
CSA1A036Z
CJA2B108ZV
CJA2E106ZV
CPB1A184Z
CPS1A852
CPS1A853
CPG1A898X
CPG1A898W
CQB1A943Z
CQB1A943Y
CQB1A943X
CQB1A943W
CQB1A627
CQB1A627
CQB1A627
CQB1A627
CQB1A882Z
s
1*
1*
1
1
1*
1*
1*
1*
1*
1*
1*
1*
1*
1*
1*
2*
2*
2*
2*
2*
2*
2*
2*
1*
77
DRA-F107 / DRA-F107DAB
Page 79
NOTE FOR SCHEMATIC DIAGRAM
WARNING:
Parts marked with this symbol z have critical characteristics.
Use ONLY replacement parts recommended by the manufacturer.
CAUTION:
Before returning the unit to the customer, make sure you
make either (1) a leakage current check or (2) a line to chassis
resistance check. If the leakage current exceeds 0.5 milliamps,
or if the resistance from chassis to either side of the
power cord is less than 460 kohms, the unit is defective.
WARNING:
DO NOT return the unit to the customer until the problem is
located and corrected.
NOTICE:
ALL RESISTANCE VALUES IN OHM. k=1,000 OHM
M=1,000,000 OHM
ALL CAPACITANCE VALUES IN MICRO FARAD.
P=MICRO-MICRO FARAD
EACH VOLTAGE AND CURRENT ARE MEASURED AT
NO SIGNAL INPUT CONDITION.
CIRCUIT AND PARTS ARE SUBJECT TO CHANGE
WITHOUT PRIOR NOTICE.
78
DRA-F107 / DRA-F107DAB
Page 80
87654321
19
5
6
20
16
15
18
17
A
4
21
22
17
B
8
9
10
C
14
13
D
E
Lch SIGNAL LINE
Rch SIGNAL LINE
SCHEMATIC DIAGRAMS (1/4)
MAIN UNIT
DRA-F107/DRA-F107DAB
s
F
Page 81
87654321
1
2
3
A
B
C
D
E
Lch SIGNAL LINE
Rch SIGNAL LINE
SCHEMATIC DIAGRAMS (2/4)
FRONT UNIT
DRA-F107/DRA-F107DAB
F
Page 82
87654321
A
B
C
D
E
SCHEMATIC DIAGRAMS (3/4)
SMPS UNIT
DRA-F107/DRA-F107DAB
F
Page 83
87654321
A
B
11
12
C
D
Lch SIGNAL LINE
Rch SIGNAL LINE
SCHEMATIC DIAGRAMS (4/4)
AMP UNIT
DRA-F107/DRA-F107DAB
E
F
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