Datasheet STTH803G, STTH803D Datasheet (SGS Thomson Microelectronics)

®

HIGH FREQUENCY SECONDARY RECTIFIER

MAJOR PRODUCTS CHAR ACTERISTICS

STTH803D/G

I

F(AV)

V

RRM

8 A

300 V

Tj (max) 175 °C

V

(max) 1 V

F

trr (max) 35 ns

FEATURES AND BENE FITS

COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE

ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY

DESCRIPTION

Single Fast Recovery Epitaxial Diode suited for
Switch Mode Power Supply and high frequency
DC/DC converters.

2

Packaged in TO-220AC or D

PAK this device is

especially intended for secondary r ectification.

K

TO-220AC

STTH803D

K

A

D

N.C.

2

PAK

A

K

STTH803G

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RSM

T

stg

Tj

October 1999 - Ed: 5C

Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 150°C δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal
Non repetitive avalanche current tp = 20 µs square
Storage temperature range
Maximum operating junction temperature

300 V

20 A

8A

100 A

4A

-65 +175 °C
+ 175 °C

1/6

STTH803D/G

THERMA L RE SISTA NC ES

Symbol Parameter Value Unit

R

th (j-c)

Junction to case

STATIC ELECTRICAL CHARACTE RISTICS (per diode)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

2.5 °C/W

*

I

R

V

F

Reverse leakage
current

**

Forward voltage drop I

V

= 300 V Tj = 25°C

R

Tj = 125°C

= 8 A Tj = 25°C

F

IF = 8 A Tj = 125°C

20 200

0.85 1

20 µA

1.25 V

Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I

F(AV)

+ 0.031 I

F2(RMS )

RECOVERY CH ARACTE RIST ICS

Symbol Tests conditions Min. Typ. Max. Unit

25 ns
35

200 ns

3.5 V

8A

V

S

trr

tfr

FP

factor

I

RM

= 0.5 A Irr = 0.25 A IR = 1 A Tj = 25°C

I

F

I

= 1 A dIF/dt = - 50 A/µs VR = 30 V Tj = 25°C

F

I

= 8 A dIF/dt = 100 A/µs

F

V

= 1.1 x VF max.

FR

Vcc = 200V IF = 8 A
dI

/dt = 200 A/µs

F

Tj = 25 °C
Tj = 25 °C
Tj = 125°C

0.3 -

2/6

STTH803D/G

Fig. 1: Conduction losses versus average curr ent.

P1(W)

12
10

8

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

6
4

T

2

=tp/T

0

IF(av) (A)

012345678910

δ

tp

Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

δ = 0.2

0.4

δ = 0.1

0.2

0.0

Single pulse

tp(s)

1E-3 1E-2 1E-1 1E+0

δ

=tp/T

T

tp

Fig. 2: Forward voltage drop versus forward
current (maximum values).

IFM(A)

100.0

Tj=125°C

10.0

Tj=25°C

Tj=75°C

1.0

0.1

0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50

VFM(V)

Fig. 4: Peak reverse recovery current versus
dI

/dt (90% confidence).

F

IRM(A)

16

VR=200V

14

Tj=125°C

12
10

8
6
4
2
0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

IF=2*IF(av)

IF=IF(av)

IF=0.5*IF(av)

Fig. 5: Reverse recovery time ver sus dI

F

confidence).

trr(ns)

100

90
80
70
60
50

IF=2*IF(av)

40
30
20
10

0

0 50 100 150 200 250 300 350 400 450 500

IF=0.5*IF(av)

dIF/dt(A/µs)

VR=200V
Tj=125°C

IF=IF(av)

/dt (90%

Fig. 6: Softness factor versus dI

/dt (typical

F

values).

S factor

0.60

0.50

0.40

0.30

0.20

0.10

0.00
0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

VR=200V
Tj=125°C

3/6

STTH803D/G

Fig. 7: Re lative variati on of dynamic par ameters

versus junction temperature (reference: Tj = 125°C).

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
25 50 75 100 125

Fig. 9: Forward recovery time versus dI

S factor

IRM

Tj(°C)

/dt (90%

F

confidence).

tfr(ns)

300

VFR=1.1*VF max.

250
200

IF=IF(av)
Tj=125°C

Fig. 8: Transient peak forward voltage versus
dI

/dt (90% confidence).

F

VFP(V)

8

IF=IF(av)

7

Tj=125°C

6
5
4
3
2
1
0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

150
100

50

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

4/6

PACKAGE ME CHANICAL D AT A

2

D

PAK

STTH803D/G

DIMENSIONS

L2

A

E

C2

REF.

A 4.40 4.60 0.173 0.181

Millimeters Inches

Min. Max. Min. Max.

A1 2.49 2.69 0.098 0.106

D

L

L3

A1

B2
B

C

R

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409

G

A2

G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624

L2 1.27 1.40 0.050 0.055

M

*

* FLAT ZONE NO LESS THAN 2mm

V2

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

FOOT PRINT DIMENSIONS (in millimeters)

2

D

PAK

16.90

10.30

1.30

8.90

3.70

5.08

5/6

STTH803D/G

PACKAGE MECHANICAL DAT A

TO-220AC

H2

L5

Ø I

L6

L2

L9

F1

L4

F

G

DIMENSIONS

A

C

REF.

Millimeters Inc hes

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

L7

C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

D

H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620

M

E

L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ.

Diam. I 3.75 3.85 0.147 0.151

Ordering code Marking Package Weight Base qty Delivery mode

STTH803D STTH803D TO-220AC 1.86g 50 Tube

2

STTH803G STTH803G D

PAK 1.48g 50 Tube

Cooling method: by conduction (C)
Recommended torque value (TO-220AC): 0.55 N.m.
Maximum torque value (TO-220AC): 0.70 N.m.
Epoxy meets UL 94, V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwi se un der any pat ent or patent rights of STMic roelec tronics. S pecifications ment ioned in t his publ ication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not author i zed f or use as critical comp onents i n l i fe s upport devices or systems without express written ap­proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroe lectronics

© 1999 STMicroelectronics - Printed in Italy - All rights reser ved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

6/6