Datasheet STTH802CT, STTH802CFP, STTH802CB Datasheet (SGS Thomson Microelectronics)

®

HIGH EFFICIENCY ULTRAFAST DIODE

MAIN PRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

Tj (max) 175 °C

(max) 0.95 V

V

F

trr (max) 20 ns

2x4A

200 V

STTH802CT/CB/CFP

A1

K

A2

FEATURES AND BENEFITS

Suited for SMPS

■

Low losses

■

Low forward and reverserecovery times

■

High surge current capability

■

■ High junction temperature

■ Insulated package: TO-220FPAB

TO-220AB

STTH802CT

A1

A2

K

A1

K

TO-220FPAB

STTH802CFP

K

DESCRIPTION

Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in DPAK, TO-220AB or TO-220FPAB.
This device is intended foruseinlow voltage, high
frequency inverters, free wheeling and polarity

DPAK

STTH802CB

A1

A2

K

protection applications.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 200 V
RMS forward current TO-220AB / TO-220FPAB /DPAK 10 A
Average forward

current δ =0.5

TO-220AB / DPAK Tc = 155°C Per diode 4 A
TO-220FPAB Tc = 145°C

A2

TO-220AB / DPAK Tc = 150°C Per device 8 A
TO-220FPAB Tc = 130°C

I

FSM

T

stg

Surge non repetitive forwardcurrent tp = 10 ms Sinusoidal 50 A
Storage temperature range - 65 + 175 °C

Tj Maximum operating junction temperature 175 °C

April 2002 - Ed: 1A

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STTH802/CT/CB/CFP

THERMAL PARAMETERS

Symbol Parameter Maximum Unit

R

th (j-c)

Junction to case TO-220AB / DPAK Per diode 4.0 °C/W

TO-220FPAB 6.5
TO-220AB / DPAK Total 2.5
TO-220FPAB 5

R

th (j-c)

Coupling TO-220AB / DPAK 1 °C/W

TO-220FPAB 3.5

When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x R

(per diode) + P(diode2) x R

th(j-c)

th(c)

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

I

* Reverse leakage

R

current

V

** Forward voltage drop Tj = 25°C I

F

Tj = 25°C V

R=VRRM

4 µA

Tj = 125°C 2 40

= 4 A 1.1 V

F

Tj = 125°C I
Tj = 25°C I

= 4 A 0.81 0.95

F

= 8 A 1.25

F

Tj = 125°C I

Pulse test: * tp = 5ms, δ <2%

** tp = 380µs, δ <2%

= 8 A 0.95 1.1

F

To evaluate the maximumconduction losses use the following equation :
P=0.80xI

F(AV)

+ 0.037 I

F2(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

trr Reverse recovery

time

tfr Forward recovery

time

V

FP

Forward recovery

Tj = 25°C I

Tj = 25°C I

Tj = 25°C I

= 0.5 A Irr = 0.25 A

F

IR=1A

=4A dIF/dt = 100 A/µs

F

VFR=1.1xVFmax

=4A dIF/dt = 100 A/µs 2.4 V

F

13 20 ns

50 ns

voltage

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STTH802/CT/CB/CFP

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

P (W)F(av)

5

4

3

2

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

δ = 0.05

δ = 0.1

I (A)F(av)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Fig. 3: Forward voltage drop versus forward
current (per diode).

I (A)FM

100.0

Tj=125°C

Tj=125°C

Typical values

Typical values

Tj=125°C

10.0

1.0

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

Tj=125°C

Maximum values

Maximum values

Tj=25°C

Maximum values

V (V)FM

Fig.2:Peak current versusformfactor (per diode).

I (A)M

60

50

P= 5W

40

30

20

10

P= 2W

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

δ

δ

P = 10W

=tp/T

T

tp

Fig. 4-1: Relative variation of thermal impedance
junctiontocaseversuspulseduration(TO-220AB,
DPAK).

Zth(j-c) / Rth(j-c)

1.0

δ = 0.5

δ = 0.2

δ = 0.1

δ

=tp/T

T

tp

Single pulse

tp(s)

0.1

1.E-03 1.E-02 1.E-01 1.E+00

Fig. 4-2:Relativevariation of thermal impedance

junctiontocase versus duration(TO-220FPAB).

Zth(j-c) / Rth(j-c)

1.0

δ = 0.5

δ = 0.2

δ = 0.1

0.1

Single pulse

T

tp(s)

=tp/T

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

δ

tp

Fig. 5-1: Non repetitive surge peak forward
current versus overload duration per diode
(TO-220AB, DPAK).

I (A)M

70

60

50

40

30

20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

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STTH802/CT/CB/CFP

Fig. 5-2: Non repetitive surge peak forward

current versus overload duration per diode
(TO-220FPAB).

I (A)M

60

50

40

30

20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).

C(pF)

100

F=1MHz

Vosc=30mV

Tj=25°C

RMS

Fig. 6:Averageforwardcurrent versus ambient
temperature (δ = 0.5, per diode).

I )(A)F(av

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

DPAK (S=0.5cm²)

1.0

0.5

0.0

Rth(j-a)=70°C:W

0 25 50 75 100 125 150 175

Rth(j-a)=Rth(j-c)

Tamb(°C)

TO-220AB/DPAK

TO-220FPAB

Fig. 8: Reverse recovery charges versus dIF/dt
(90% confidence, per diode).

Q (nC)RR

1000

IF=4A
VR=200V
Tj=125°C

VR(V)

10

1 10 100 1000

Fig. 9: Peak reverse recovery current versus

dIF/dt (90% confidence, per diode).

I (A)RM

100.0

IF=4A
VR=200V
Tj=125°C

10.0

1.0

dI /dt(A/µs)F

0.1
10 100 1000

100

dIF/dt(A/µs)

10

10 100 1000

Fig. 10: Dynamic parameters versus junction

temperature.

Q ;I [Tj] / Q ; I [Tj = 125°C]RR RM RR RM

1.4

IF=4A

=200V

V

R

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 25 50 75 100 125 150

I

RM

Q

RR

Tj(°C)

4/8

Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm) for
DPAK.

(j-a)

Rth (°CW)

100

90
80
70
60
50
40
30
20
10

0

0 2 4 6 8 101214161820

S(cm²)

PACKAGE MECHANICAL DATA

TO-220AB

STTH802CT/CB/CFP

L2

F1

F2

F

G1

H2

Dia

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

A

C

C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

L5

L7

L6

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

L9

D

L4

G1 2.40 2.70 0.094 0.106

H2 10 10.40 0.393 0.409

L2 16.4 typ. 0.645 typ.

M

E

G

L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ.

Diam. 3.75 3.85 0.147 0.151

5/8

STTH802CT/CB/CFP

PACKAGE MECHANICAL DATA

DPAK

DIMENSIONS

REF.

Millimeters Inches

Min. Max Min. Max.

A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212

C 0.45 0.60 0.017 0.023

C2 0.48 0.60 0.018 0.023

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.251 0.259

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039

V2 0° 8° 0° 8°

FOOTPRINT

6.7

6.7

3

3

1.61.6

2.32.3

6/8

PACKAGE MECHANICAL DATA

TO-220FPAB

H

Dia

L6

L2

L3

L5

D

L4

G1

F1

F2

F

STTH802/CT/CB/CFP

DIMENSIONS

REF.

A 4.4 4.6 0.173 0.181

A

B

B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039

F1 1.15 1.70 0.045 0.067

L7

F2 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417

E

L5 2.9 3.6 0.114 0.142

Millimeters Inches

Min. Max. Min. Max.

G

L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366

Dia. 3.00 3.20 0.118 0.126

Ordering code Marking Package Weight Base qty Delivery mode

STTH802CT STTH802CT TO-220AB 2.23 g 50 Tube
STTH802CB STTH802CB DPAK 0.3 g 75 Tube

STTH802CB-TR STTH802CB DPAK 0.3 g 2500 Tape & reel

STTH802CFP STTH802CFP TO-220FPAB 2.0 g 50 Tube

■

Cooling method: by conduction (method C)

■

Recommended torque value (TO-220AB): 0.8 N.m

■

Maximum torque value (TO-220AB): 1.0 N.m

■

Recommended torque value (TO-220FPAB): 0.55 N.m

■

Maximum torque value (TO-220FPAB): 0.7 N.m

■

Epoxy meets UL 94,V0

7/8

STTH802CT/CB/CFP

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