Datasheet STTH152 Datasheet (SGS Thomson Microelectronics)

Page 1
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
STTH152
I
F(AV)
V
RRM
1.5 A
200 V
Tj (max) 175 °C
(max) 0.75 V
V
F
trr(max) 32 ns
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
DESCRIPTION
The STTH152 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits.
The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.
ABSOLUTE RATINGS (limiting values)
DO-15
STTH152
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
Tj
stg
Repetitive peak reverse voltage Average forward current TI = 115°C δ = 0.5 Surge non repetitive forward current tp=10 ms Sinusoidal Storage temperature range Maximum operating junction temperature
200 V
1.5 A 80 A
-65 +175 °C 175 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
* Oninfinite heatsink with 10mm lead length.
November 2001 - Ed:1A
Junction to ambient*
45 °C/W
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STTH152
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
*
I
R
V
F
Pulse test:*tp=5ms,δ<2%
Reverse leakage current Tj = 25°C V
**
Forward voltage drop Tj = 25°CI
** tp = 380 µs, δ <2%
Tj = 125°C
Tj = 125°C
R=VRRM
= 1.5A
F
240
0.66 0.75
1.5 µA
0.95 V
To evaluate the maximum conduction losses use the following equation : P=0.60xI
F(AV)
+0.10xI
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
=1A dIF/dt = -50A/µs
I
F
= 30V
V
R
= 1.5A dIF/dt = 50A/µs
I
F
=1.1xVFmax
V
FR
Tj = 25°C
Tj = 25°C
Tj = 25°C
50 ns
1.8 V
32 ns
voltage
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STTH152
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
δ = 0.05
δ = 0.1
IF(av)(A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Thermal resistance versus lead length.
Rth(°C/W)
110 100
90 80 70 60 50 40 30 20 10
0
5 10152025
Rth(j-a)
Rth(j-l)
Lleads(mm)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 25 50 75 100 125 150 175
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C:W
Tamb(°C)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration (printed circuit board epoxy FR4, LIeads = 10mm).
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
tp(s)
δ
=tp/T
T
tp
Fig. 5: Forward voltage drop versus forward current.
IFM(A)
100.0
Tj=125°C
Tj=125°C
(Maximum values)
(Maximum values)
10.0
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
1.0
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Tj=25°C
(Maximum values)
Fig. 6: Junction capacitance versus reverse voltage applied (typical values).
C(pF)
100
10
VR(V)
1
1 10 100 1000
F=1MHz
Vosc=30mV
Tj=25°C
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Page 4
STTH152
Fig. 7: Reverse recovery time versus dIF/dt (90%
confidence).
trr(ns)
90
80
70
60
50
40
30
20
10
0
1 10 100 1000
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
IF=1.5A
VR=100V
Fig. 9: Relative variations of dynamic parameters versus junction temperature.
IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C]
3.5
IF=1.5A
dIF/dt=200A/µs
VR=100V
3.0
2.5
Qrr
Fig.8:Peak reverse recoverycurrentversus dIF/dt (90% confidence).
IRM(A)
4.0
IF=1.5A
VR=100V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 1 10 100 1000
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
2.0
trr
1.5
IRM
Tj(°C)
1.0 25 50 75 100 125 150 175
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PACKAGE MECHANICAL DATA
DO-15
STTH152
DIMENSIONS
A
CC
REF.
Millimeters Inches
Min. Max. Min. Max.
A 6.05 6.75 0.238 0.266 B 2.95 3.53 0.116 0.139
D
B
C 26 31 1.024 1.220 D 0.71 0.88 0.028 0.035
Ordering code Marking Package Weight Base qty Delivery mode
STTH152 STTH152 DO-15 0.4 g 1000 Ammopack
STTH152RL STTH152 DO-15 0.4 g 6000 Tape and reel
White band indicates cathode
Epoxy meets UL 94,V0
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