The STTH152 which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS (limiting values)
DO-15
STTH152
SymbolParameterValueUnit
V
RRM
I
F(AV)
I
FSM
T
Tj
stg
Repetitive peak reverse voltage
Average forward currentTI = 115°C δ = 0.5
Surge non repetitive forward currenttp=10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
200V
1.5A
80A
-65 +175°C
175°C
THERMAL RESISTANCES
SymbolParameterValueUnit
R
th (j-a)
* Oninfinite heatsink with 10mm lead length.
November 2001 - Ed:1A
Junction to ambient*
45°C/W
1/5
Page 2
STTH152
STATIC ELECTRICAL CHARACTERISTICS
SymbolParameterTests conditionsMin.Typ.Max.Unit
*
I
R
V
F
Pulse test:*tp=5ms,δ<2%
Reverse leakage currentTj = 25°CV
**
Forward voltage dropTj = 25°CI
** tp = 380 µs, δ <2%
Tj = 125°C
Tj = 125°C
R=VRRM
= 1.5A
F
240
0.660.75
1.5µA
0.95V
To evaluate the maximum conduction losses use the following equation :
P=0.60xI
F(AV)
+0.10xI
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
SymbolParameterTests conditionsMin.Typ.Max.Unit
trrReverse recovery
time
tfrForward recovery
time
V
FP
Forward recovery
=1A dIF/dt = -50A/µs
I
F
= 30V
V
R
= 1.5A dIF/dt = 50A/µs
I
F
=1.1xVFmax
V
FR
Tj = 25°C
Tj = 25°C
Tj = 25°C
50ns
1.8V
32ns
voltage
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Page 3
STTH152
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.00.20.40.60.81.01.21.41.61.8
δ = 0.05
δ = 0.1
IF(av)(A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Thermal resistance versus lead length.
Rth(°C/W)
110
100
90
80
70
60
50
40
30
20
10
0
5 10152025
Rth(j-a)
Rth(j-l)
Lleads(mm)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0255075100125150175
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C:W
Tamb(°C)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration (printed
circuit board epoxy FR4, LIeads = 10mm).
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-011.E+001.E+011.E+021.E+03
tp(s)
δ
=tp/T
T
tp
Fig. 5: Forward voltage drop versus forward
current.
IFM(A)
100.0
Tj=125°C
Tj=125°C
(Maximum values)
(Maximum values)
10.0
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
1.0
VFM(V)
0.1
0.00.20.40.60.81.01.21.41.61.82.0
Tj=25°C
(Maximum values)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
10
VR(V)
1
1101001000
F=1MHz
Vosc=30mV
Tj=25°C
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Page 4
STTH152
Fig. 7: Reverse recovery time versus dIF/dt (90%
confidence).
trr(ns)
90
80
70
60
50
40
30
20
10
0
1101001000
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
IF=1.5A
VR=100V
Fig. 9: Relative variations of dynamic parameters
versus junction temperature.
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