Page 1
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STTH12R06D/FP
I
F(AV)
V
RRM
(typ.) 7 A
I
RM
12 A
600 V
Tj (max) 175 °C
(max) 1.8 V
V
F
trr (max) 45 ns
FEATURES AND BENEFITS
Ultrafast switching
■
■ Low reverse recovery current
■ Reduces switching losses
Low thermal resistance
■
DESCRIPTION
The STTH12R06D/FP, which is using ST Turbo 2
600V technology, is specially suited as boost
diodeincontinuousmodepowerfactorcorrections
and hard switching conditions.
The device is also intended for use as a free
wheeling diode in powersupplies and otherpower
switching applications.
A
K
TO-220FPAC
STTH12R06FP
K
A
K
TO-220AC
STTH12R06D
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 600 V
RMS forward current 30 A
Average forward current 12 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A
Storage temperature range - 65 + 175 °C
Tj Maximum operatingjunction temperature + 175 °C
January 2002 - Ed: 1B
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STTH12R06D/FP
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AC 1.7 °C/W
TO-220FPAC 4.4
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Reverse leakage
current
Forward voltage drop IF= 12 A Tj= 25°C 2.9 V
F
VR= 600V Tj = 25°C 45 µA
Tj = 125°C 50 600
Tj = 125°C 1.4 1.8
To evaluate the maximum conduction losses use the following equation :
P=1.16xI
F(AV)
+ 0.053 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr I
= 0.5 A Irr = 0.25 A IR= 1A Tj = 25°C 25 ns
F
I
=1A dIF/dt=-50A/µs
F
45
VR= 30V
I
RM
S factor 0.2
VR= 400 V IF= 12A
dIF/dt = - 200A/µs
Tj = 125°C 7.0 8.4 A
Qrr 180 nC
tfr I
V
FP
=12A dIF/dt=96A/µs
F
VFR=1.1xVFmax
Tj = 25°C 200 ns
5.5 V
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Page 3
STTH12R06D/FP
Fig.1: Conductionlosses versus average current.
P(W)
30
25
20
15
10
5
0
0123456789101112131415
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AC).
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
tp(s)
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
120
110
100
90
80
70
60
50
40
30
20
10
0
0123456
Tj=125°C
Tj=125°C
(Typicalvalues)
(Typicalvalues)
Tj=125°C
Tj=125°C
(Maximum values)
(Maximum values)
VFM(V)
Tj=25°C
(Maxumimvalues)
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tp(s)
δ
=tp/T
T
tp
Fig. 4: Peak reverse recovery current versus
/dt (90% confidence).
dI
F
IRM(A)
30
VR=400V
28
Tj=125°C
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0 200 400 600 800 1000
IF=0.25 x IF(av)IF=0.25 x IF(av)
IF=0.5 x IF(av)IF=0.5 x IF(av)
dIF/dt(A/µs)
IF=2 x IF(av)IF=2 x IF(av)
IF=IF(av)IF=IF(av)
Fig. 5: Reverse recovery time versus dIF/dt
(90% confidence).
trr(ns)
80
70
60
50
40
30
20
10
0
0 200 400 600 800 1000
IF=IF(av)IF=IF(av)
IF=0.5 x IF(av)IF=0.5 x IF(av)
dIF/dt(A/µs)
IF=2 x IF(av)IF=2 x IF(av)
VR=400V
Tj=125°C
3/6
Page 4
STTH12R06D/FP
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
Qrr(nC)
600
VR=400V
550
Tj=125°C
500
450
400
350
300
250
200
150
100
50
0
0 200 400 600 800 1000
dIF/dt(A/µs)
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
Fig. 8: Relative variation of dynamic
parameters versus junction temperature.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25 50 75 100 125
Qrr
S factor
IRM
Tj(°C)
IF=IF(av)
VR=400V
Tj=125°C
Reference: Tj=125°C
Fig. 7: Softness factor versus dIF/dt (typical
values).
S factor
0.50
IF=IF(av)
VR=400V
0.45
Tj=125°C
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0 200 400 600 800 1000
dIF/dt(A/µs)
Fig. 9: Transient peak forward voltage versus
/dt (90% confidence).
dI
F
VFP(V)
14
IF=IF(av)
13
Tj=125°C
12
11
10
9
8
7
6
5
4
3
2
1
0
0 100 200 300 400 500
dIF/dt(A/µs)
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
tfr(ns)
500
450
400
350
300
250
200
150
100
50
0
0 100 200 300 400 500
dIF/dt(A/µs)
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IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
VR(V)
10
1 10 100 1000
F=1MHz
Vosc=30mV
Tj=25°C
Page 5
PACKAGE MECHANICAL DATA
TO-220FPAC
H
Dia
L6
L2
L3
L5
D
L4
G1
G
F1
F
STTH12R06D/FP
DIMENSIONS
REF.
A
B
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
L7
F1 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
E
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
Millimeters Inches
Min. Max. Min. Max.
PACKAGE MECHANICAL DATA
TO-220AC
H2
L5
Ø I
L6
L2
L9
F1
L4
F
G
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A
C
L7
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
L4 13.00 14.00 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
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Page 6
STTH12R06D/FP
Ordering code Marking Package Weight Base qty Delivery mode
STTH12R06D STTH12R06D TO-220AC 1.9 g 50 Tube
STTH12R06FP STTH12R06FP TO-220FPAC 1.7 g 50 Tube
Cooling method: by conduction (C)
■
Recommended torque value (TO-220AC): 0.55 Nm
■
Maximum torque value (TO-220AC / TO-220FPAC): 0.7 Nm
■
Epoxy meets UL 94,V0
■
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useof such information nor for any infringement of patents or other rights ofthird parties which may result from its use. No license is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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