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STF817
STN817
PNP MEDIUM POWER TRANSISTORS
■ SURFACE-MOUNTING DEVICES IN
MEDIUM POWE R SO T-223 AND SO T-89
PACKAGES
■ AVAILABLE IN TAPE & REEL PACKING
APPLICATIONS
■ VOLTAGE REGULATION
■ RELAY DRIVER
■ GENERIC SWITCH
DECRIPTION
The STF817 and STN817 are PNP transistors
manufactured using Planar Technology resulting
in rugged high performance devices.
INTERNAL SCHEMATIC DIAGRAM
April 2002
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
Devices STN817 STF817
Packages SOT-223 SOT-89
V
CBO
Collector-Base Voltage (IE = 0) -120 V
V
CEO
Collector-Emitter Voltage (IB = 0) -80 V
V
EBO
Emitter-Base Voltage (IC = 0) -5 V
I
C
Collector Current -1.5 A
I
CM
Collector Peak Current (tp < 5 ms) -2 A
I
B
Base Current -0.3 A
I
BM
Base Peak Current (tp < 5 ms) -0.6 A
P
tot
Total Dissipation at Tc = 25 oC 1.6 1.4 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
2
3
SOT-223
®
SOT-89
Type Marking
STF817 817
STN817 N817
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THERMAL DATA
SOT-223 SOT-89
R
thj-amb
• Thermal Resistance Junction-ambient Max 78 89
o
C/W
• Device mounted on a PCB area of 1 cm2.
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= -120 V -500 µA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= -80 V -1 mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -5 V -100 µA
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= -10 mA -80 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -100 mA IB = -10 mA
I
C
= -1 A IB = -100 mA
-0.25
-0.5
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
IC = -100 mA IB = -10 mA
I
C
= -1 A IB = -100 mA
-1
-1.1
V
V
h
FE
∗ DC Current Gain IC = -100 mA VCE = -2 V
I
C
= -500 mA VCE = -2 V
I
C
= -1 A VCE = -2 V
140
80
40
f
T
Transition Frequency IC = -0.1 A VCE = -10 V 50 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
STF817 - STN817
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.80 0.071
B 0.60 0.70 0.80 0.024 0.027 0.031
B1 2.90 3.00 3.10 0.114 0.118 0.122
c 0.24 0.2 6 0.32 0.009 0.010 0.013
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.30 0.090
e1 4.60 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10
o
10
o
A1 0.02
P008B
SOT-223 MECHANICAL DATA
STF817 - STN817
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DIM.
mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.4 1.6 55.1 63.0
B 0.44 0.56 17.3 22.0
B1 0.36 0.48 14.2 18.9
C 0.35 0.44 13.8 17.3
C1 0.35 0.44 13.8 17.3
D 4.4 4.6 173.2 181.1
D1 1.62 1.83 63.8 72.0
E 2.29 2.6 90.2 102.4
e 1.42 1.57 55.9 61.8
e1 2.92 3.07 115.0 120.9
H 3.94 4.25 155.1 167.3
L 0.89 1.2 35.0 47.2
P025H
SOT-89 MECHANICAL DATA
STF817 - STN817
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectro nics – Printed in Italy – All Rights Reserved
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STF817 - STN817
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