Page 1
DESCRIPTION
STN4438
N Channel Enhancement Mode MOSFET
8.2A
STN4438 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
l 60V/8.2A, R
l 60V/7.6A, R
l Super high density cell design for
l Exceptional on-resistance and maximum
l SOP-8 package design
FEATURE
= 25mΩ (Typ.)
DS(ON)
@VGS = 10V
= 30mΩ
DS(ON)
@VGS = 4.5V
extremely low R
DC current capability
DS(ON)
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
STN4438 2009. V1
PDF created with pdfFactory Pro trial version www.pdffactory.com
Page 2
STN4438
N Channel Enhancement Mode MOSFET
8.2A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Symbol Typical Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current IDM 40 A
Continuous Source Current (Diode Conduction) IS 3.0 A
Power Dissipation
Operation Junction Temperature TJ 150
Storgae Temperature Range TSTG -55/150
Thermal Resistance-Junction to Ambient RθJA 70
TA=25℃
TA=70℃
TA=25℃
TA=70℃
ID
PD
8.2
6.6
3.1
2.0
W
℃
℃
℃
A
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
STN4438 2009. V1
PDF created with pdfFactory Pro trial version www.pdffactory.com
Page 3
STN4438
N Channel Enhancement Mode MOSFET
8.2A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter Symbol Condition Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V
(BR)DSS
V
GS(th)
VGS=0V,ID=250uA 60 V
VDS=VGS,ID=250uA 1.0 3.0 V
30
±100
30
35
nA
uA
mΩ
Gate Leakage Current I
Zero Gate Voltage
Drain Current
On-State Drain
Current
Drain-source OnResistance
R
Forward
Transconductance
VDS=0V,VGS=±20V
GSS
VDS=48V,VGS=0V 1
I
DSS
I
D(on)
VDS=48V,VGS=0V
≧
V
DS
TJ=5℃
5V,VGS=10V
5
40 A
DS(on)
VGS=10V,ID=10A
VGS=4.5V,ID=8A
25
gfs VDS=5V,ID=6.2AV 24 S
Diode Forward Voltage VSD IS=1A,VGS=0V 0.8 1.2 V
Dynamic
Total Gate Charge Qg 48 58
Gate-Source Charge Qgs 24.2 30
Gate-Drain Charge Qgd
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
C
t
d(on)
t
d(off)
C
C
tr
tf
iss
oss
rss
VDS=30V,VGS=10V
≡
I
8.2A
D
14.5
1920
VDS ==30V,VGS=0V
155
F=1MHz
VDS=30V,RL=3.6Ω
V
=3V
GEN
116
8.5
6
29
6
nC
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
STN4438 2009. V1
pF
PDF created with pdfFactory Pro trial version www.pdffactory.com
Page 4
STN4438
N Channel Enhancement Mode MOSFET
8.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
STN4438 2009. V1
PDF created with pdfFactory Pro trial version www.pdffactory.com
Page 5
STN4438
N Channel Enhancement Mode MOSFET
8.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
PDF created with pdfFactory Pro trial version www.pdffactory.com
Copyright © 2008, Stanson Corp.
STN4438 2009. V1
Page 6
PACKAGE OUTLINE SOP-8P
STN4438
N Channel Enhancement Mode MOSFET
8.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
PDF created with pdfFactory Pro trial version www.pdffactory.com
Copyright © 2008, Stanson Corp.
STN4438 2009. V1
Page 7
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